New Product Introduction 4 Mb Serial FRAM Cypress

New Product Introduction: 4 Mb Serial F-RAM™ Cypress Introduces the Industry’s First 4 Mb Serial F-RAM 001 -92370 Rev *D Owner: MRAN Tech lead: EWOO 4 Mb Serial F-RAM New Product Introduction

NVRAM 1: Rapid Growth, Broad Markets The Global TAM 2 forecast for NVRAMs is $590 M in 2014 with a 10% CAGR through 20183 Cypress’s 4 Mb F-RAM serves many high-growth NVRAM markets, including: Serial F-RAM Multifunction printers Industrial controls and automation Medical wearables Test and measurement equipment Smart meters The mission-critical systems used in these high-growth markets must reliably capture and store large amounts of data on power loss These systems require high-density, high-reliability, high-endurance and energy-efficient NVRAMs Alternative nonvolatile memories, such as EEPROM and MRAM, cannot match F-RAM performance Mission-critical systems require high-density NVRAMs with superior reliability, endurance and energy efficiency 1 A nonvolatile memory (NVM) that allows direct access to stored data in any random order available market 3 Source: Web-Feet Research 2 Total 001 -92370 Rev *D Owner: MRAN Tech lead: EWOO 4 Mb Serial F-RAM New Product Introduction 3 a

Cypress Is the NVRAM Market Leader Cypress offers the largest portfolio of serial and parallel NVRAM products F-RAM™, the industry’s most energy-efficient serial and parallel NVRAMs nv. SRAM, the industry’s fastest parallel NVRAMs Cypress offers the largest portfolio of the industry’s most energy-efficient and reliable F-RAM products F-RAM consumes 30% of the power of the most advanced EEPROM and offers 100 million times the Write Endurance 1 F-RAM densities range from 4 Kb to 4 Mb, with supply voltages from 2. 0 V to 5. 5 V SPI and I 2 C serial F-RAM products come in SOIC 8, DFN 8 and EIAJ packages F-RAM products offer optional real-time clocks and event counters Cypress offers the largest portfolio of the industry’s fastest parallel nv. SRAM products 25 ns access times are available with unlimited Write Endurance Densities range from 64 Kb to 16 Mb with 3. 0 -V and 5. 0 -V supply voltages and 1. 8 -V I/O voltage Asynchronous x 8, x 16, x 32 SRAM parallel interfaces come in FBGA, SOIC, SSOP, and TSOP packages Integrated real-time clocks are also available on nv. SRAM products Cypress: Was the first to produce F-RAM and nv. SRAM products Has shipped more than 1 billion NVRAM units Provides products that meet the most rigorous automotive and military standards Assures long-term supply of F-RAM and nv. SRAM products Cypress offers the industry’s fastest, most energy-efficient and highest-reliability NVRAM solutions to capture and protect the world’s most critical data 1 The number of times an NVM cell can be rewritten before it wears out 001 -92370 Rev *D Owner: MRAN Tech lead: EWOO 4 Mb Serial F-RAM New Product Introduction 3 b

Serial Nonvolatile Memory Terms NVM Hierarchy Nonvolatile Memory (NVM) Memory that retains its information on power loss NVM Nonvolatile Random Access Memory (NVRAM) NVM that allows direct access to stored data in any random order NVRAM EEPROM Electrically Erasable Programmable Read-Only Memory (EEPROM) A common NVM that uses floating-gate technology to store data F-RAM nv. SRAM MRAM Ferroelectric Random Access Memory (F-RAM) A fast-write, high-endurance, low-energy NVM that uses ferroelectric technology to store data Nonvolatile Static Random-Access Memory (nv. SRAM) Fast SRAM memory with a SONOS NVM cell embedded in each SRAM cell to retain data on power loss Magnetoresistive Random Access Memory (MRAM) An NVRAM that uses the magnetism of electron spin to store data Page Write A write to a fixed-length contiguous block of memory Soak Time The approximate 10 ms required for a 2 Mb EEPROM to complete a Page Write after the data is presented at the input buffers Write Endurance The number of times an NVM cell can be rewritten before it wears out Wear Leveling A method to prolong EEPROM Write Endurance that uses an EEPROM with up to 8 x excess capacity and a software algorithm to move storage to unused memory addresses before the Write Endurance limit on an active address is reached 001 -92370 Rev *D Owner: MRAN Tech lead: EWOO 4 Mb Serial F-RAM New Product Introduction 4

Serial NVM Design Problems 1. Many electronic devices must reliably capture and store large amounts of data in NVM on power loss EEPROMs are only available up to 2 Mb in density 2 Mb EEPROMs require a 10 -ms continuation of active power per Page Write for Soak Time requires additional capacitors or batteries for a Page Write on power loss, increasing cost and reducing reliability Mission-critical data can be lost when memory is corrupted by exposure to radiation or magnetic fields 2. Many data-logging applications exceed EEPROM’s 1 -million write-cycle limitation Wear Leveling is required to improve the Write Endurance of EEPROM over a product lifespan Wear Leveling requires up to 8 x the memory capacity and additional software, increasing engineering effort and cost 3. Systems using EEPROM and MRAM consume excess active power For the 10 ms required for 2 Mb EEPROM Soak Time per Page Write For the processing required to do EEPROM Wear Leveling For the very high active and sleep currents consumed by MRAM Cypress’s serial F-RAM solves these problems Offers densities up to 4 Mb Eliminates Soak Time and the need for additional capacitors or batteries to complete a Page Write on power loss Protects data with radiation- and magnetic field-tolerant F-RAM memory cells Provides 100 trillion write cycles (31, 710 years at 10 -ms write frequency), eliminating the need for Wear Leveling Consumes 2 x to 5 x less active power than EEPROM and 45 x less active power than MRAM Cypress’s high-reliability 4 Mb F-RAM offers 100 million times the endurance of EEPROM and consumes less active power than EEPROM and MRAM 001 -92370 Rev *D Owner: MRAN Tech lead: EWOO 4 Mb Serial F-RAM New Product Introduction 5

Serial F-RAM Is a Better Solution Simplify a conventional, complex, EEPROM-based design… By choosing F-RAM as your serial NVM solution… 8 x 2 Mb for a 4 Mb System To produce better solutions for multiple applications at a lower cost, especially for mission-critical applications. 4 x EEPROM capacity for Wear Leveling Multifunction Printers File System Industrial Controls and Automation Medical Wearables Controller Test and Measurement Equipment Memory Smart Meters Worn Cell Wear Leveling software algorithm to increase EEPROM Write Endurance F-RAM pin-for-pin replacement for EEPROM SOIC 8 Additional capacitor to maintain power for 10 ms per Page Write for Soak Time 001 -92370 Rev *D Owner: MRAN Tech lead: EWOO 4 Mb Serial F-RAM New Product Introduction 6

Cypress 4 Mb Serial NVRAM vs. Competition’s Feature F-RAM CY 15 B 104 Q F-RAM MB 85 RS 2 MT 1 MRAM MR 20 H 40 EEPROM M 95 M 022 Density 4 Mb 2 Mb SPI Speed 40 MHz 25 MHz 50 MHz 5 MHz Sleep Mode Current 8 µA 10 µA 40 µA N/A Soak Time 0 ms 10 ms Endurance (Cycles) 1014 1013 Unlimited 1. 2 x 106 Lifetime @ 10 -ms Write Frequency 3 31, 710 years 3, 171 years Unlimited 208 minutes Active Write Current 4 0. 6 m. A 2. 2 m. A 27. 1 m. A 3 m. A Nonvolatile Retention 100 years 10 years 200 years Magnetic Damage Risk No No Yes 5 No 1 2 Mb Fujitsu serial F-RAM; Fujitsu does not offer 4 Mb serial F-RAM ST serial EEPROM; ST does not offer 4 Mb serial EEPROM 3 Comparable write frequency limited by EEPROM’s Soak Time 4 Conditions: Max current, SPI, 5 MHz, 2. 7 to 3. 6 V, -40°C to +85°C 5 An MRAM can be corrupted by the magnetic fields encountered near motors and solenoids 2 2 Mb 001 -92370 Rev *D Owner: MRAN Tech lead: EWOO 4 Mb Serial F-RAM New Product Introduction 7

F-RAM Portfolio Low Power | High Endurance 512 Kb - 8 Mb SPI F-RAM FM 25 H 20/V 20 2 Mb; H 20: 2. 7 -3. 6 V V 20: 2. 0 -3. 6 V 40 MHz SPI; Ind 1 NEW CY 15 B 102 Q 2 Mb; 2. 0 -3. 6 V 25 MHz SPI; Auto E 3 I 2 C F-RAM 4 Kb - 256 Kb Wireless Memory Parallel F-RAM NEW FM 22 L 16/LD 16 4 Mb; 2. 7 -3. 6 V 55 ns; x 8; Ind 1 CY 15 B 104 Q 4 Mb; 2. 0 -3. 6 V 40 MHz SPI; Ind 1 FM 25 V 10/VN 10 1 Mb; 2. 0 -3. 6 V 40 MHz SPI; Ind 1, Auto A 2 FM 28 V 202 A 2 Mb; 2. 0 -3. 6 V 60 ns; x 16; Ind 1 FM 28 V 102 A 1 Mb; 2. 0 -3. 6 V 60 ns; x 16; Ind 1 FM 24 V 10/VN 10 1 Mb; 2. 0 -3. 6 V 3. 4 MHz I 2 C; Ind 1 NEW FM 25 V 05 512 Kb; 2. 0 -3. 6 V 40 MHz SPI; Ind 1, Auto A 2 FM 24 V 05 512 Kb; 2. 0 -3. 6 V 3. 4 MHz I 2 C; Ind 1 FM 25 V 02/W 256 Kb; V 02: 2. 0 -3. 6 V W 256: 2. 7 -5. 5 V 40 MHz SPI; Ind 1, Auto A 2 FM 24 V 02/W 256 FM 33256 256 Kb; V 02: 2. 0 -3. 6 V 256 Kb; 3. 3 V; 16 MHz SPI W 256: 2. 7 -5. 5 V Ind 1; RTC 4; Power Fail 3. 4 MHz I 2 C; Ind 1, Auto A 2 Watchdog; Counter FM 25 V 01 128 Kb; 2. 0 -3. 6 V 40 MHz SPI; Ind 1, Auto A 2 FM 24 V 01 128 Kb; 2. 0 -3. 6 V 3. 4 MHz I 2 C; Ind 1, Auto A 2 FM 31256/31(L)278 256 Kb; 3. 3, 5. 0 V; 1 MHz I 2 C; Ind 1; RTC 4; Power Fail; Watchdog; Counter FM 25640/CL 64 64 Kb; 3. 3, 5. 0 V 20 MHz SPI; Ind 1, Auto E 3 FM 24 C 64/CL 64 64 Kb; 3. 3, 5. 0 V 1 MHz I 2 C; Ind 1, Auto E 3 FM 3164/31(L)276 64 Kb; 3. 3, 5. 0 V; 1 MHz I 2 C; Ind 1; RTC 4; Power Fail; Watchdog; Counter FM 25 C 160/L 16 16 Kb; 3. 3, 5. 0 V 20 MHz SPI; Ind 1, Auto E 3 FM 24 C 16/CL 16 16 Kb; 3. 3, 5. 0 V 1 MHz I 2 C; Ind 1 FM 25040/L 04 4 Kb; 3. 3, 5. 0 V 20 MHz SPI; Ind 1, Auto E 3 FM 24 C 04/CL 04 4 Kb; 3. 3, 5. 0 V 1 MHz I 2 C; Ind 1 Industrial grade − 40ºC to +85ºC 3 AEC-Q 100 − 40ºC to +125ºC 1 2 AEC-Q 100 001 -92370 Rev *D Processor Companion Owner: MRAN Tech lead: EWOO 4 Real-time Wireless Memory NDA Required Contact Sales NEW CY 15 B 101 N 1 Mb; 2. 0 -3. 6 V 60 ns; x 16; Auto A 2 CY 15 B 102 N 2 Mb; 2. 0 -3. 6 V 60 ns; x 16; Auto A 2 FM 28 V 020 256 Kb; 2. 0 -3. 6 V 70 ns; x 8; Ind 1 FM 18 W 08 256 Kb; 2. 7 -5. 5 V 70 ns; x 8; Ind 1 FM 1808 B 256 Kb; 5. 0 V 70 ns; x 8; Ind 1 FM 16 W 08 64 Kb; 2. 7 -5. 5 V 70 ns; x 8; Ind 1 Production Sampling Development Concept clock Status Availability QQYY 10 a

nv. SRAM Portfolio High Density | High Speed SPI nv. SRAM I 2 C nv. SRAM CY 14 V 116 F/G 16 Mb; 3. 0, 1. 8 V I/O 30 ns; ONFI 3 1. 0 x 8, x 16; Ind 1 CY 14 B 116 R/S 16 Mb; 3. 0 V 25, 45 ns; x 32; Ind 1 RTC 2 Higher Densities DDRx 6 nv. SRAM NDA Required Contact Sales CY 14 B 108 K/L 8 Mb; 3. 0 V 25, 45 ns; x 8; Ind 1 RTC 2 CY 14 B 108 M/N 8 Mb; 3. 0 V 25, 45 ns; x 16; Ind 1 RTC 2 CY 14 B 116 K/L 16 Mb; 3. 0 V 25, 45 ns; x 8; Ind 1 RTC 2 CY 14 B 116 M/N 16 Mb; 3. 0 V 25, 45 ns; x 16; Ind 1 RTC 2 CY 14 B 104 K/LA 4 Mb; 3. 0 V 25, 45 ns; x 8; Ind 1 RTC 2 CY 14 V 104 LA 4 Mb; 3. 0, 1. 8 V I/O 25, 45 ns; x 8; Ind 1 CY 14 B 104 M/NA 4 Mb; 3. 0 V 25, 45 ns; x 16; Ind 1 RTC 2 CY 14 V 104 NA 4 Mb; 3. 0, 1. 8 V I/O 25, 45 ns; x 16; Ind 1 CY 14 V 101 PS 1 Mb; 3. 0, 1. 8 V I/O 108 MHz QSPI 5; Ind 1 Ext. Ind 7; RTC 2 CY 14 V 101 QS 1 Mb; 3. 0, 1. 8 V I/O 108 MHz QSPI 5; Ind 1 Ext. Ind 7 CY 14 B 101 I 1 Mb; 3. 0 V 3. 4 MHz I 2 C; Ind 1 RTC 2 CY 14 B 101 KA/LA 1 Mb; 3. 0 V 25, 45 ns; x 8; Ind 1 RTC 2 CY 14 V 101 LA 1 Mb; 3. 0, 1. 8 V I/O 25, 45 ns; x 8; Ind 1 CY 14 B 101 MA/NA 1 Mb; 3. 0 V 25, 45 ns; x 16; Ind 1 RTC 2 CY 14 V 101 NA 1 Mb; 3. 0, 1. 8 V I/O 25, 45 ns; x 16; Ind 1 CY 14 B 101 P 1 Mb; 3. 0 V 40 MHz SPI; Ind 1 RTC 2 CY 14 B 512 P 512 Kb; 3. 0 V 40 MHz SPI; Ind 1 RTC 2 CY 14 B 512 I 512 Kb; 3. 0 V 3. 4 MHz I 2 C; Ind 1 RTC 2 CY 14 B 256 KA/LA 256 Kb; 3. 0 V 25, 45 ns; x 8; Ind 1 RTC 2 CY 14 V/U 256 LA 256 Kb; 3. 0, 1. 8 V I/O 35 ns; x 8; Ind 1 CY 14 E 256 LA 256 Kb; 5. 0 V 25, 45 ns; x 8; Ind 1 STK 14 C 88 -5 256 Kb; 5. 0 V 35, 45 ns; x 8; Mil 4 CY 14 B 256 P 256 Kb; 3. 0 V 40 MHz SPI; Ind 1 RTC 2 CY 14 B 256 I 256 Kb; 3. 0 V 3. 4 MHz I 2 C; Ind 1 RTC 2 STK 11 C 68 -5 64 Kb; 5. 0 V 35, 55 ns; x 8; Mil 4 STK 12 C 68 -5 64 Kb; 5. 0 V 35, 55 ns; x 8; Mil 4 CY 14 B 064 P 64 Kb; 3. 0 V 40 MHz SPI; Ind 1 RTC 2 CY 14 B 064 I 64 Kb; 3. 0 V 3. 4 MHz I 2 C; Ind 1 RTC 2 64 Kb - 256 Kb 512 Kb - 16 Mb Parallel nv. SRAM Military grade − 55ºC to +125ºC Quad serial peripheral interface 6 Double Data Rate 1 Industrial 4 2 Real-time 5 grade − 40ºC to +85ºC clock 3 Open NAND flash interface 001 -92370 Rev *D Owner: MRAN Tech lead: EWOO Higher Densities QSPI 5 nv. SRAM NDA Required Contact Sales NEW 7 NEW Production Sampling Development Concept Extended Industrial grade − 40ºC to +105ºC Status Availability QQYY 10 b

4 Mb SPI Serial F-RAM Applications Block Diagram Multifunction printers Industrial controls and automation Medical wearables Test and measurement equipment Smart meters 4 Mb SPI Serial F-RAM Control 4 Instruction Register Features 40 -MHz SPI interface 100 -trillion read/write cycle endurance Operating voltage range: 2. 0 -3. 6 V Low (8 -µA) sleep current 100 -year data retention Industrial temperature operation Packages: 8 -pin TDFN, 8 -pin SOIC F-RAM Array Address Register Serial Input Data I/O Register Serial Output Status Register Availability Collateral Preliminary Datasheet: 001 -92370 Rev *D Control Logic Contact Sales Owner: MRAN Tech lead: EWOO Sampling: Production: 4 Mb Serial F-RAM New Product Introduction Q 2 2015 Q 4 2015 11

Here’s How to Get Started 1. Download the SPI Guide for F-RAM 2. Register to access online technical support: www. cypress. com 3. Request a preliminary datasheet: Contact Sales Smart E-Meter by Landis + Gyr 001 -92370 Rev *D Owner: MRAN Tech lead: EWOO Multifunction Printer by Ricoh 4 Mb Serial F-RAM New Product Introduction Motor Control by SEW 12

APPENDIX 001 -92370 Rev *D Owner: MRAN Tech lead: EWOO 4 Mb Serial F-RAM New Product Introduction 15

4 Mb F-RAM Product Selector Guide 4 Mb F-RAM Part Number Density Interface Frequency Min. Supply Voltage Max. Supply Voltage Temp Package CY 15 B 104 Q-SXI 4 Mb SPI 40 MHz 2. 0 V 3. 6 V -40 to 85°C 8 -SOIC CY 15 B 104 Q-LHXI 4 Mb SPI 40 MHz 2. 0 V 3. 6 V -40 to 85°C 8 -DFN Serial F-RAM Part Numbering Decoder CY 15 B 104 Q – XX X I Temperature Range: I = Industrial Pb Content: X = Pb-free Package: S = 8 -SOIC, LH = 8 -DFN Interface: Q = SPI Density: 104 = 4 Mb Voltage: B = 2. 0 to 3. 6 V Marketing Code: 15 = F-RAM Company ID: CY = Cypress 001 -92370 Rev *D Owner: MRAN Tech lead: EWOO 4 Mb Serial F-RAM New Product Introduction 16

References and Links Cypress Nonvolatile Products website: www. cypress. com/nonvolatile The source for all of our publicly available nonvolatile product documentation and collateral Cypress Nonvolatile Products roadmap: Cypress Nonvolatile RAM Roadmap Datasheets and NDA roadmap requests: Cypress Sales Representative or email cypressfram@cypress. com Application Notes: Nonvolatile Products Application Notes Knowledge Base Articles: Nonvolatile Products Knowledge Base Articles 001 -92370 Rev *D Owner: MRAN Tech lead: EWOO 4 Mb Serial F-RAM New Product Introduction 18

4 Mb Serial F-RAM Solution Value Competitor $17. 28 Competitor EEPROM: (8 x) ST M 95 M 02 2 Mb Price: (8 x $2. 16): $17. 281 Capacitor for 10 -ms Soak Time Page Writes BOM Integration Value 10 -ms Soak Time Page Writes: Nichicon URU 1 A 222 MHD 1 TO 2. 2 -m. F capacitor Price: $0. 391 Wear Leveling Firmware Development Total Additional Value Wear Leveling firmware development: New firmware development, testing and certification; 25 man-weeks @ $2, 000/man-week amortized over 100, 000 units Value Added: $0. 50 $0. 39 $0. 50 Total Value Delivered $18. 17 Target Cypress Solution: CY 15 B 104 Q-SXI Total Cost: $12. 322 32% Total Savings: $5. 85 1 Digikey 2 Future website 1 ku pricing on 02/24/2015 1 ku Cypress website pricing on 02/24/2015 001 -92370 Rev *D Owner: MRAN Tech lead: EWOO 4 Mb Serial F-RAM New Product Introduction 19