New Product Introduction 1 Mb Quad SPI nv

New Product Introduction: 1 Mb Quad SPI nv. SRAM Eliminate Batteries and Reduce Pin Count While Maintaining High-Speed Nonvolatile RAM Performance 001 -93526 Rev *F Owner: SKRG Tech lead: EWOO 1 Mb Quad SPI nv. SRAM New Product Introduction

Demand for Reliability and Performance Is Driving Nonvolatile RAM Growth The Global TAM 1 forecast for Nonvolatile RAM (NVRAM) is $590 M in 20142 with a 10% CAGR through 2018 Cypress’s 1 Mb Quad SPI 3 nv. SRAM applications include: Computing and networking Industrial automation RAID storage These applications use high-performance systems that require instant, high-reliability data capture on power loss These systems need the data throughput performance of high-speed parallel NVRAMs and the reduced pin count of Quad SPI interfaces preferred by designers Customers that buy these systems prefer battery-free NVRAM solutions Current NVRAM solutions, such as Battery-Backed SRAM, cannot meet all of these requirements Take advantage of the industry shift from parallel Battery-Backed SRAM to Quad SPI NVRAM 1 Total Available Market 2 Web-Feet Research, Cypress Semiconductor research 3 Quad Serial Peripheral Interface 001 -93526 Rev *F Owner: SKRG Tech lead: EWOO 1 Mb Quad SPI nv. SRAM New Product Introduction 3 a

Cypress: No. 1 in NOR Flash, SRAM, NVRAM Comparison to Competitors’ Memory Product Portfolios Product Category Cypress Competitors ISSI No. 1 NOR Flash No. 1 SRAM No. 1 NVRAM Micron Toshiba Winbond Macronix Fujitsu Parallel NOR Flash Serial NOR Flash Hyper. Flash™ 1 QDR®-IV Synchronous SRAM Asynchronous SRAM with ECC 2 Micro. Power SRAM Serial F-RAM™ 4 Parallel nv. SRAM 5 AGIGARAM® 7 Metrics Highest Read Bandwidth 102 MBps Fastest Program/Erase Highest Read Bandwidth 160 MBps Fastest Program/Erase Highest Read Bandwidth 333 MBps Highest RTR (random transaction rate) 2. 1 GT/s Highest reliability <0. 1 FIT 3 Lowest standby current 1. 5 µA Lowest standby current 100 µA Fastest NVRAM 6 20 ns Performance Advantage Highest-density NVRAM 6 16 GB Cypress has the broadest portfolio of high-performance memories for embedded systems 1 A Cypress NOR Flash Memory product family that offers higher bandwidth than Quad SPI NOR 5 Nonvolatile SRAM Flash Memory with one-third the number of pins of parallel NOR Flash Memory 2 Error-correcting code 3 Failures In Time (billion hours) 4 Ferroelectric RAM 6 Nonvolatile memory that provides direct access to read and write 001 -93526 Rev *F Owner: SKRG Tech lead: EWOO to any memory location in any random order 7 A Cypress brand name 3 b

Terms You Will Hear Today Nonvolatile Memory (NVM) Memory that retains data on power loss Nonvolatile Random-Access Memory (NVRAM) An NVM that allows direct access to stored data in any random order Write Endurance The number of times an NVM cell can be rewritten before it wears out Silicon Oxide Nitride Oxide Silicon (SONOS) A transistor with a polysilicon gate (S), an Oxide Nitride Oxide (ONO) gate dielectric and a Silicon substrate (S) used to create a Nonvolatile Memory storage cell Nonvolatile Static Random-Access Memory (nv. SRAM) Fast SRAM memory with a SONOS NVM cell embedded in each SRAM cell to retain data on power loss Quad Serial Peripheral Interface (Quad SPI) A high-speed interface that combines four individual SPI channels to increase serial bus throughput Electrically Erasable Programmable Read-Only Memory (EEPROM) A common NVM that uses floating-gate technology to store data Battery-Backed SRAM (BBSRAM) SRAM memory connected to a battery to retain data on power loss Restriction of Hazardous Substances (Ro. HS) A European Union directive intended to eliminate the use of environmentally hazardous material in electronic components Redundant Array of Independent Disks (RAID) A storage technology that uses two or more disk drives for redundancy 001 -93526 Rev *F Owner: SKRG Tech lead: EWOO 1 Mb Quad SPI nv. SRAM New Product Introduction 4

High-Speed NVM Design Problems 1. Many systems require fast NVMs with high Write Endurance Traditional EEPROM and flash NVMs have slow write times (>1 ms) and limited Write Endurance Low-power asynchronous SRAMs have fast access times but require battery backup to store data on power loss Most NVRAMs do not offer a 16 -pin serial interface with enough performance to match a 44 -pin high-speed parallel interface 2. BBSRAM solutions force undesirable tradeoffs Batteries consume board space and require a power-management controller, increasing system cost and complexity Coin-cell batteries have a three-year lifetime, which adds cost by requiring system maintenance and downtime After a power outage, data is lost if the battery is drained before power is restored, so repairs must be made quickly Batteries contain heavy metals that violate Ro. HS regulations 3. Many systems require accurate time-stamping Accurate external real-time clock chips, used to time-stamp data, add cost and complexity Cypress’s 1 Mb Quad SPI nv. SRAM solves all these problems Provides ≥ 24 MBps random read/write access time with unlimited Write Endurance Offers a 16 -pin Quad SPI interface with a 108 -MHz clock rate, exceeding the throughput of a 44 -pin x 16, 40 -ns parallel interface Stores data reliably on power loss without batteries, even in magnetic fields Eliminates the need for an external power-management controller Offers an integrated, high-accuracy, real-time clock option Cypress’s 1 Mb Quad SPI nv. SRAM simplifies your design by eliminating batteries and reducing pin count 001 -93526 Rev *F Owner: SKRG Tech lead: EWOO 1 Mb Quad SPI nv. SRAM New Product Introduction 5

Quad SPI nv. SRAM Is a Better Solution Simplify a complex BBSRAM-based design… By choosing a Quad SPI nv. SRAM as your NVM solution… To produce a high-speed, highreliability serial NVRAM solution for a mission-critical application. Low-power asynchronous SRAM Computing and Networking Industrial Automation RAID Storage Battery required to store data on power loss Quad SPI nv. SRAM solution with integrated RTC Extra board space for battery 001 -93526 Rev *F Owner: SKRG Tech lead: EWOO 1 Mb Quad SPI nv. SRAM New Product Introduction 6

Cypress 1 Mb Quad SPI NVRAM Solution vs. Competition’s Feature Quad SPI nv. SRAM CY 14 x 101 x. S Micropower SRAM + Battery IS 62 WV 1288 DBLL Quad SPI MRAM 1 MR 10 Q 010 Max Clock Rate 108 MHz NA 104 MHz Random Data Throughput 2 24 MBps 22 MBps 23 MBps Burst Data Throughput 3 54 MBps 22 MBps 52 MBps Package Pins 16 32 16 Controller Pins 4 6 29 6 Active Write Current 38 m. A at 108 MHz NA 5 220 m. A at 104 MHz Sleep Current 10 µA (standby) 100 µA Magnetic Field Immunity Yes No 6 Real-Time Clock Option Yes No No 1 Magnetoresistive Random Access Memory that uses magnetic elements to store data 2 Fully random read or write in 4 -byte burst 3 Full 1 Mb memory burst write or read 4 Pins required to connect to an MCU 5 No direct comparison due to interface differences; this SRAM part consumes 8 m. A at 22 MHz 6 An MRAM can be corrupted by the magnetic fields encountered near motors and solenoids 001 -93526 Rev *F Owner: SKRG Tech lead: EWOO 1 Mb Quad SPI nv. SRAM New Product Introduction 7

nv. SRAM Portfolio High Density | High Speed SPI nv. SRAM I 2 C nv. SRAM CY 14 V 116 F/G 16 Mb; 3. 0, 1. 8 V I/O 30 ns; ONFI 3 1. 0 x 8, x 16; Ind 1 CY 14 B 116 R/S 16 Mb; 3. 0 V 25, 45 ns; x 32; Ind 1 RTC 2 Higher Densities DDRx 6 nv. SRAM NDA Required Contact Sales CY 14 B 108 K/L 8 Mb; 3. 0 V 25, 45 ns; x 8; Ind 1 RTC 2 CY 14 B 108 M/N 8 Mb; 3. 0 V 25, 45 ns; x 16; Ind 1 RTC 2 CY 14 B 116 K/L 16 Mb; 3. 0 V 25, 45 ns; x 8; Ind 1 RTC 2 CY 14 B 116 M/N 16 Mb; 3. 0 V 25, 45 ns; x 16; Ind 1 RTC 2 CY 14 B 104 K/LA 4 Mb; 3. 0 V 25, 45 ns; x 8; Ind 1 RTC 2 CY 14 V 104 LA 4 Mb; 3. 0, 1. 8 V I/O 25, 45 ns; x 8; Ind 1 CY 14 B 104 M/NA 4 Mb; 3. 0 V 25, 45 ns; x 16; Ind 1 RTC 2 CY 14 V 104 NA 4 Mb; 3. 0, 1. 8 V I/O 25, 45 ns; x 16; Ind 1 CY 14 V 101 PS 1 Mb; 3. 0, 1. 8 V I/O 108 MHz QSPI 5; Ind 1 Ext. Ind 7; RTC 2 CY 14 V 101 QS 1 Mb; 3. 0, 1. 8 V I/O 108 MHz QSPI 5; Ind 1 Ext. Ind 7 CY 14 B 101 I 1 Mb; 3. 0 V 3. 4 MHz I 2 C; Ind 1 RTC 2 CY 14 B 101 KA/LA 1 Mb; 3. 0 V 25, 45 ns; x 8; Ind 1 RTC 2 CY 14 V 101 LA 1 Mb; 3. 0, 1. 8 V I/O 25, 45 ns; x 8; Ind 1 CY 14 B 101 MA/NA 1 Mb; 3. 0 V 25, 45 ns; x 16; Ind 1 RTC 2 CY 14 V 101 NA 1 Mb; 3. 0, 1. 8 V I/O 25, 45 ns; x 16; Ind 1 CY 14 B 101 P 1 Mb; 3. 0 V 40 MHz SPI; Ind 1 RTC 2 CY 14 B 512 P 512 Kb; 3. 0 V 40 MHz SPI; Ind 1 RTC 2 CY 14 B 512 I 512 Kb; 3. 0 V 3. 4 MHz I 2 C; Ind 1 RTC 2 CY 14 B 256 KA/LA 256 Kb; 3. 0 V 25, 45 ns; x 8; Ind 1 RTC 2 CY 14 V/U 256 LA 256 Kb; 3. 0, 1. 8 V I/O 35 ns; x 8; Ind 1 CY 14 E 256 LA 256 Kb; 5. 0 V 25, 45 ns; x 8; Ind 1 STK 14 C 88 -5 256 Kb; 5. 0 V 35, 45 ns; x 8; Mil 4 CY 14 B 256 P 256 Kb; 3. 0 V 40 MHz SPI; Ind 1 RTC 2 CY 14 B 256 I 256 Kb; 3. 0 V 3. 4 MHz I 2 C; Ind 1 RTC 2 STK 11 C 68 -5 64 Kb; 5. 0 V 35, 55 ns; x 8; Mil 4 STK 12 C 68 -5 64 Kb; 5. 0 V 35, 55 ns; x 8; Mil 4 CY 14 B 064 P 64 Kb; 3. 0 V 40 MHz SPI; Ind 1 RTC 2 CY 14 B 064 I 64 Kb; 3. 0 V 3. 4 MHz I 2 C; Ind 1 RTC 2 64 Kb - 256 Kb 512 Kb - 16 Mb Parallel nv. SRAM 1 Industrial grade − 40ºC to +85ºC 4 Military grade − 55ºC to +125ºC 2 Real-time clock 5 Quad serial peripheral interface 3 Open NAND flash interface 6 Double Data Rate 001 -93526 Rev *F Owner: SKRG Tech lead: EWOO Higher Densities QSPI 5 nv. SRAM NDA Required Contact Sales NEW Production Sampling Development Concept 7 Extended Industrial grade − 40ºC to +105ºC Status Availability QQYY 10

1 Mb Quad SPI nv. SRAM Applications Block Diagram Computing and networking Industrial automation RAID storage VCAP 2 1 Mb Quad SPI nv. SRAM Store Control Features Quad SPI interface: 108 MHz Unlimited Write Endurance One million store cycles on power fail Data retention of 20 years at 85°C Operating voltages: 3. 0 V, 1. 8 -V I/O Low standby (280 -µA) and sleep (10 -µA) currents Industrial temperature range: -40°C to +85°C Extended Industrial temperature range: -40°C to +105°C Integrated, high-accuracy real-time clock (RTC) Package: 16 -SOIC, 24 -BGA Control Logic Store/Recall Control SRAM Array 4 I/O Control Recall Software Command Detect XIN 1 XOUT 1 RTC VRTC HSB 3 Availability Collateral Preliminary Datasheet: QSPI I/Os 2 Power Control SONOS Array Contact Sales Sampling: Production: Q 3 2015 Q 4 2015 1 Crystal connections 3 Hardware store busy 2 External capacitor connection 001 -93526 Rev *F Owner: SKRG Tech lead: EWOO 1 Mb Quad SPI nv. SRAM New Product Introduction 11

Here’s How to Get Started 1. Download our App Notes: Cypress Nonvolatile Products App Notes 2. Register to access online technical support 3. Request an advance datasheet: Contact Sales RAID Card by LSI Logic 001 -93526 Rev *F Owner: SKRG Tech lead: EWOO Programmable Logic Controller by Keyence 1 Mb Quad SPI nv. SRAM New Product Introduction Router by Cisco 12

APPENDIX 001 -93526 Rev *F Owner: SKRG Tech lead: EWOO 1 Mb Quad SPI nv. SRAM New Product Introduction 15

nv. SRAM Product Selector Guide 1 Mb Quad SPI nv. SRAM Part Number Clk Freq Supply Voltage I/O Voltage Grade Interface Temp Package RTC CY 14 V 101 QS-SF 108 XI Quad SPI 108 -MHz 3. 0 V 1. 8 V Industrial -40 to 85°C 16 -SOIC No CY 14 V 101 QS-SF 108 XQ Quad SPI 108 -MHz 3. 0 V 1. 8 V Ext. Industrial -40 to 105°C 16 -SOIC No CY 14 V 101 PS-SF 108 XI Quad SPI 108 -MHz 3. 0 V 1. 8 V Industrial -40 to 85°C 16 -SOIC Yes CY 14 V 101 QS-SE 108 XI Quad SPI 108 -MHz 3. 0 V 1. 8 V Industrial -40 to 85°C 16 -SOIC No CY 14 V 101 QS-SE 108 XQ Quad SPI 108 -MHz 3. 0 V 1. 8 V Ext. Industrial -40 to 105°C 16 -SOIC No CY 14 V 101 QS-BK 108 XI Quad SPI 108 -MHz 3. 0 V 1. 8 V Industrial -40 to 85°C 24 -BGA No CY 14 V 101 QS-BK 108 XQ Quad SPI 108 -MHz 3. 0 V 1. 8 V Ext. Industrial -40 to 105°C 24 -BGA No 1 Mb QPSI nv. SRAM Part Numbering Decoder CY 14 V 101 QS – SF 108 X I Temperature Range: I = Industrial, Q = Ext. Industrial Pb Content: X = Pb-free Frequency: 108 = 108 MHz Package: SF = 16 -SOIC Standard; SE = 16 -SOIC Custom; BK = 24 -BGA Interface: QS = Quad SPI; PS = Quad SPI with RTC Density: 101 = 1 Mb nv. SRAM Voltage: V = 3. 0 V, 1. 8 V I/O Marketing Code: 14 = nv. SRAM Company ID: CY = Cypress 001 -93526 Rev *F Owner: SKRG Tech lead: EWOO 1 Mb Quad SPI nv. SRAM New Product Introduction 16

References and Links Video: nv. SRAM Basics Video nv. SRAM datasheets: 1 Mb nv. SRAM, 4 Mb nv. SRAM, 8 Mb nv. SRAM, 16 Mb nv. SRAM (Preliminary) nv. SRAM w/ONFI datasheet: 16 Mb nv. SRAM (Preliminary) nv. SRAM w/Real-Time Clock datasheets: 1 Mb nv. SRAM, 4 Mb nv. SRAM, 8 Mb nv. SRAM, 16 Mb nv. SRAM (Preliminary) App Note: Comparison Between nv. SRAM and BBSRAMs App Note: Replacing 4 Mbit (256 K x 16) MRAM with Cypress nv. SRAM App Note: nv. SRAM with RTC Design Guidelines Website: Cypress Parallel nv. SRAMs nv. SRAM Product Selector Guide: nv. SRAM Product Selector Guide Product roadmap: Cypress Nonvolatile RAM 001 -93526 Rev *F Owner: SKRG Tech lead: EWOO 1 Mb Quad SPI nv. SRAM New Product Introduction 18

1 Mb QSPI nv. SRAM Solution Value Competitor 1 Mb low-power SRAM: ISSI IS 62 WV 1288 DBLL Price: $1. 641 BOM Integration Battery + casing: Panasonic CR 2477 battery + Memory Protection Devices Inc. BH 1000 G-ND casing Price: $2. 121 Power management controller: Maxim MXD 1210 ESA Price: $4. 012 Additional Value 22 -µF external capacitor: Panasonic ECS-F 0 JE 2262 B Price: -$0. 221 Field battery replacement cost Price: $9. 093 Competitor $1. 64 Battery + Casing $2. 12 Power Management Controller $6. 13 BOM Integration Value 22 -µF External Capacitor -$0. 22 $9. 09 Field Battery Replacement Cost Board Space Saving Total Additional Value Board space saving Value Added: $0. 124 $4. 01 $0. 12 $8. 99 Total Value Delivered $16. 76 Target Cypress Solution: CY 14 V 101 QS-SF 108 XI Total Cost: $7. 985 52% Total Savings: $8. 78 1 Digikey website 1 ku pricing on 08/07/2014 2 Mouser website 1 ku pricing on 08/07/2014 3 $4. 92 (four times in 15 years at $1. 23 per battery), plus labor cost: $4. 17 (four times in 15 years with labor at $50/hour and replacement time conservatively estimated at 75 seconds/battery) 4 12. 25 square centimeters at $0. 01 per square centimeter 5 1 ku web pricing on Cypress. com 001 -93526 Rev *F Owner: SKRG Tech lead: EWOO 1 Mb Quad SPI nv. SRAM New Product Introduction 19