MOSFET MOSFET MetalOxide Semiconductor FieldEffect Transistor CMOS MOS

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MOSFET的结构

MOSFET的结构

MOSFET ： Metal-Oxide Semiconductor Field-Effect Transistor CMOS : 互补MOS n型MOSFET ：载流子为电子 p型MOSFET ：载流子为空穴 阱：

MOSFET ： Metal-Oxide Semiconductor Field-Effect Transistor CMOS : 互补MOS n型MOSFET ：载流子为电子 p型MOSFET ：载流子为空穴 阱： 局部 衬底

VGS>VT、VDS=0

VGS>VT、VDS=0

VGS>VT、VDS>VGS-VT称为饱和区

VGS>VT、VDS>VGS-VT称为饱和区

NMOS管的电流公式 截至区，Vgs<VTH 线性区, Vgs >VTH VDS< Vgs - VTH 饱和区, Vgs >VTH VDS >Vgs

NMOS管的电流公式 截至区，Vgs<VTH 线性区, Vgs >VTH VDS< Vgs - VTH 饱和区, Vgs >VTH VDS >Vgs - VTH

MOSFET的跨导gm

MOSFET的跨导gm

2) VGS > VTH VDS <<VGS – VTH深三极管区

2) VGS > VTH VDS <<VGS – VTH深三极管区

3) VGS > VTH VDS >VGS – VTH饱和区

3) VGS > VTH VDS >VGS – VTH饱和区

减小MOS器件电容的版图结构 对于图a: CDB=CSB = WECj + 2(W+E)Cjsw 对于图b: CDB=(W/2)ECj+2((W/2)+E)Cjsw CSB=2((W/2)ECj+2((W/2)+E)Cjsw = WECj +2(W+2 E)Cjsw

减小MOS器件电容的版图结构 对于图a: CDB=CSB = WECj + 2(W+E)Cjsw 对于图b: CDB=(W/2)ECj+2((W/2)+E)Cjsw CSB=2((W/2)ECj+2((W/2)+E)Cjsw = WECj +2(W+2 E)Cjsw

例：若W/L＝ 50/0. 5，|ID|＝ 500 u. A，分别求: NMOS、 PMOS的跨导及输出阻抗以及本征增益gmr 0 （ tox=9 e-9 λn=0. 1,

例：若W/L＝ 50/0. 5，|ID|＝ 500 u. A，分别求: NMOS、 PMOS的跨导及输出阻抗以及本征增益gmr 0 （ tox=9 e-9 λn=0. 1, λp=0. 2 , μ n= 350 cm 2/V/s, μ p= 100 cm 2/V/s ） tox=50 Å, Cox 6. 9 f. F/μm 2(1 Å=10 -10 m, 1 f. F= 10 -15 F) ∴tox=90 Å, Cox 6. 9*50/90=3. 83 f. F/μm 2 同理可求得PMOS的参数如下：gm. P 1. 96 m. A/V ， r 0 P 10 KΩ ，gm. P r 0 P 19. 6

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