MOSFET IV Data PChannel device from an ALD

MOSFET I-V Data P-Channel device from an ALD 1107 Quad matched device chip. Process approximately L = 1 µm.

Long-channel Equations • Usually assume a = 0

Square-Root of ID at VDS = -5. 0 volts - Finding Threshold 0, 03 0, 025 Square Root of ID 0, 02 Square Root of ID 0, 015 0, 01 0, 005 0 -3, 50 E+00 VTH =- -3, 00 E+00 -2, 50 E+00 -2, 00 E+00 -1, 50 E+00 VGS (volts) -1, 00 E+00 -5, 00 E-01 0, 00 E+00

3, 00 E-04 2, 50 E-04 ID (amperes) 2, 00 E-04 1, 50 E-04 VGS = -2. 1 V Fit a > 0 Fit a = 0 1, 00 E-04 5, 00 E-05 0, 00 E+00 -6, 00 E+00 -5, 00 E+00 -4, 00 E+00 -3, 00 E+00 VDS (volts) -2, 00 E+00 -1, 00 E+00 0, 00 E+00

ID vs. VDS for ALD 1107 MOSFET 1, 20 E-03 VGS = -1. 0 VGS = -1. 3 VGS = -1. 6 VGS = -1. 9 1, 00 E-03 VGS = -2. 2 VGS = -2. 5 VGS = -2. 8 VGS = -3. 1 8, 00 E-04 VGS = -3. 7 VGS = -4. 1 6, 00 E-04 4, 00 E-04 2, 00 E-04 0, 00 E+00 -5, 00 E+00 -4, 50 E+00 -4, 00 E+00 -3, 50 E+00 -3, 00 E+00 -2, 50 E+00 -2, 00 E+00 -1, 50 E+00 -1, 00 E+00 -5, 00 E-01 0, 00 E+00

ID versus VGS at VDS = -4. 0 Volts - Subthreshold Logarithmic Behavior 1, 00 E-04 Ideality factor n = 1. 41 ID (amperes) 1, 00 E-05 1, 00 E-06 1, 00 E-07 1, 00 E-08 1, 00 E-09 VTH =-. 72 V. 1, 00 E-10 1, 00 E-11 -2, 0 -1, 9 -1, 8 -1, 7 -1, 6 -1, 5 -1, 4 -1, 3 -1, 2 -1, 1 -1, 0 -0, 9 VGS (volts) -0, 8 -0, 7 -0, 6 -0, 5 -0, 4 -0, 3 -0, 2 -0, 1 0, 0