Microwave Devices Microwave Passive Devices I 1 2008

Microwave Devices - Microwave Passive Devices I - 1 2008 / 1 학기 서광석 • S. N. U. EE Microwave Devices 2008

Microwave/Millimeter-Wave Technology u u u Broad Bandwidth High Speed Data Communication Small Size Antenna Mobile Communication/Automobile Radar High Resolution Imaging Biomedical Imaging ( > 100 GHz) Millimeter-wave Auto. Radar Demands for High Frequency/High Performance Devices & Circuits ~300 GHz Millimeter-Wave ICs are demonstrated. • S. N. U. EE Microwave Devices 2008

Market in higher frequency applications – new opportunity l Data rate more than 100 Mps is necessary for the next generation l Demand for higher frequency technology • S. N. U. EE Microwave Devices 2008

60 GHz WLAN and 77 GHz Car Radar Application of mm-wave for Communication Systems - 60 GHz WLAN : 1 Gb/s Automobile Radar 77 GHz (safety) • S. N. U. EE Microwave Devices 2008

Imaging Application of mm-wave Cancer Cell Detection Bio-Image System Using mm-wave Technology More Information • More Accuracy • No Harm to Human-body • Possible of the Cell Detection • mm-wave Signal Attenuation (d. B/km) Weather Insensitive Passive Imaging (94 GHz) /Security Imaging Real Image 94 GHz MMW Image in Foggy weather Frequency • S. N. U. EE Microwave Devices 2008

Market for mm-wave components Car Radar 77 GHz WLAN 60 GHz • S. N. U. EE Microwave Devices 2008

Microwave Devices l Passive Devices n n n l Active Devices n n n l Inductor, capacitor, resistor Transmission lines – waveguide, thin film transmission lines Various passive devices – coupler, transformer, hybrid Integrated passive devices for compact package SAW, BAW, FBAR, microwave resonator Antenna Diodes – Schottky diode, resonant tunneling diode Transistors – heterostructure FET, heterostructure bipolar transistor Special diodes for signal generation – IMPATT, Gunn Diode System Components n n • S. N. U. EE MMICs RF Switch – MMIC, RF MEMS Digital ICs, Optical ICs RF System-on-Package (SOP) – RF Module Microwave Devices 2008

Fundamental Speed Limitation of Devices Tbarrier Carrier Transit Time : tr Carrier Reservoir Cut-off Frequency : f. T Carrier Reservoir ( Transit Time Devices : FETs, HBTs ) • S. N. U. EE Tbarrier Decrease ( Lgate ) Vdrift Increase ( high Vdrift material ) f. T Microwave Devices 2008

Electron Transport Properties of Semiconductors In. Ga. As-based Semiconductors (Ga. As or In. P Substrate) Material Bandgap Energy (e. V) Electron Mobility (cm 2/V·s) Peak Velocity (cm/s) Si 1. 13 1, 300 1. 0 x 107 Ge 0. 76 3, 800 - Ga. As 1. 42 8, 500 2. 0 x 107 In. P 1. 26 4, 600 2. 9 x 107 In. As 0. 35 27, 000 4. 2 x 107 (77 K) In 0. 53 Ga. As 0. 75 12, 000 2. 9 x 107 In. Sb 0. 17 78, 000 5. 5 x 107 (77 K) Ga. N 3. 4 - 2. 6 x 107 • S. N. U. EE Ga. As In. P Microwave Devices 2008

Wide Bandgap Materials – Ga. N/Si. C • S. N. U. EE Microwave Devices 2008

Trend of RF Device Technology • S. N. U. EE Microwave Devices 2008

Roadmap of Si CMOS Technology • S. N. U. EE Microwave Devices 2008

Worldwide Ga. As Device & MMIC Merchant Market 2006 • S. N. U. EE Digital 79. 8 MMIC 3532. 1 FET 405. 4 TOTAL 4017. 3 2006 Military 172. 4 Wireless comms. 2168. 9 F-O Communication 133. 8 Consumer 119. 1 Automotive & Misc. 937. 9 TOTAL 3532. 1 Microwave Devices 2008

Microstrip MMIC Technology High Speed Active Devices - FET/ HBT/ HEMT Passive Devices - Inductor/ MIM Capacitor/ Thin Film Resistor Transmission Lines - microstrip line, CPW line [ Overview of microstrip type MMIC ] • S. N. U. EE Microwave Devices 2008

-wave/mm-wave Module • S. N. U. EE Microwave Devices 2008

RF System in Package - MCM-D substrate (IMEC) Patch antenna Shielding Bi. CMOS MCM-D sub. [ MCM-D substrate of IMEC ] BGA MCM Filters laminate [ Integration of a 5 GHz WLAN transmitter section ] IMEC’s MCM-D technology with integrated passives: Resistors: Ta. N (25 ohm/square), Ti(O)N (0. 5 kohm/square) l Capacitors: Ta 2 O 5 (0. 72 n. F/mm 2) & BCB (5 p. F/mm 2) l Inductors: up to 50 n. H, Q= 25 - 150 l Coplanar Lines (CPW) l Flip-Chip interconnections l Drawbacks of IMEC’s MCM-D technology Coeff. of Thermal Expansion mismatch between a chip and a BCB film l Low thermal conductivity of a BCB film l • S. N. U. EE Microwave Devices 2008

RF SOP versus RF IC – Cost Effectiveness • S. N. U. EE Microwave Devices 2008

Typical Front End – 2005 (Triquint) Ø Film Bulk Acoustic Resonator (FBAR) - BAW • S. N. U. EE - Agilent (Avago) - Filter Application Microwave Devices 2008

(참조) Absorption of Millimeter-Waves Ref. : A. Hajimiri, IEEE Custom Integrated Circuits Conference, p. 741, 2007 • S. N. U. EE Microwave Devices 2008

Various Mobile Phone Standards • S. N. U. EE Microwave Devices 2008

Multimode, Multiband GSM/WCDMA Handset (2007) • S. N. U. EE Microwave Devices 2008

Reconfigurable RF System Ref. : J. G. Atallah, et al. , IEEE Circuits & Devices Magazine p. 6, 2006 Conventional Device for Multi-standard Reconfigurable Device for Future Multi-standard • S. N. U. EE Microwave Devices 2008

Software Defined Radio • S. N. U. EE Microwave Devices 2008