Microstrip detectors 1 5 pitch 50 m Detector

Microstrip detectors 1 -5: pitch 50 µm Detector ID numbers 1 2 3 4 5 6 -10: pitch 100 µm Die dimension: 5. 92 mm x 47. 36 mm 6 7 8 9 10

Microstrip detectors characteristics 1 -5: pitch 50 µm 6 -10: pitch 100 µm

Capacitance Test Left Right

(Delivery to SCIPP 05. 2005) SMART 1 (p+/n): • W 176 (MCz, sintering@380 C, no passivation, 300µm) • W 1256 (FZ, sintering@380 C, no passivation , 300µm) SMART 2 (n+/p): • W 260 (MCz, sintering@380 C, no passivation, 300µm, p-spray 5 e 12, cut-line not implanted) • W 068 (FZ, sintering@380 C, passivated, 200µm, p-spray 5 e 12, cut-line not implanted) L Capacitance test left Microstrip minisensors 1 Capacitance test right 2 3 4 5 R 6 7 8 9 10

SMART 2 n+/p: sub-types & splittings wafer # sub-type comments 1 2 3 4 5 6 FZ FZ FZ 525 525 525 no OG; P-spray 3 E 12 + no scribe line implant P-spray 5 E 12 no OG; P-spray 5 E 12 + no scribe line implant FZ FZ 200 200 P-spray 3 E 12 no OG; P-spray 3 E 12 + no scribe line implant P-spray 5 E 12 + no scribe line implant no OG; P-spray 5 E 12 + no scribe line implant 6 wafers 008 014 024 037 064 068 084 (broken) 7 wafers 009 044 066 102 108 122 130 182 248 253 260 11 wafers 24 wafers MCz MCz MCz no no no OG; OG; OG; P-spray P-spray P-spray 3 E 12 3 E 12 5 E 12 5 E 12 + no scribe line implant + no scribe line implant

SMART 2 - n+/p - IV measurements on microstrip minisensors (Vmax=200 V) 3 & 5: pitch 50 µm 8 & 10: pitch 100 µm 3 5 8 10

SMART 2 - n+/p - FZ 200 Pitch: 100 mm Pitch: 50 mm W 014: Low dose p-spray Short BL-GR

SMART 2 - n+/p - FZ 200 Pitch: 100 mm Pitch: 50 mm W 037: High dose p-spray

SMART 2 - n+/p - MCz 300 Pitch: 100 mm Pitch: 50 mm W 066: Low dose p-spray Wrong cut

SMART 2 - n+/p - MCz 300 Pitch: 100 mm Pitch: 50 mm W 182: High dose p-spray Wrong cut