Metaloxide semiconductor FET MOSFE This transistor consists of
- Slides: 7
Metal-oxide semiconductor FET (MOSFE
This transistor consists of four pieces ; • 1. Substrate : It is either type N as in the right • or form P type as the left on the fig. • 2. Two areas of two crystals of the same type opposite the bottom layer (Substrate) They represent two parties Drain and source. • 3. Layer of oxide (SIO 2) it is non-conductive material of the electric current (dielectric). • 4. a layer of metal represents the third party of the transistor which is the gate •
The idea of transistor work 1. If not put voltage on the gate it won’t pass any current between source & drain.
2. In the case when we put positive voltage on the gate the free electrons in the crystals Source & drain was attracted to the positive electric field produced by the gate.
3. In the case when we put negative voltage on the gate Gaps in the source & drain was attracted to the negative electric field produced by the gate
Complementary Metal Oxide Semiconductor Field Effect Tra It is a circuit that combines between two transistor P & N typ • MOSFET one of the most important devices used in the design and construction of integrated • Circuits for digital computers
CMOS is (Complementary Metal Oxide Semiconductor). v is a transistors for constructing integrated circuits. v CMOS transistor used for several analog circuits such as • image sensors. • data converters. • Transmitters and receivers for a variety of different communication systems.
