Memory Devices Base on Organic Bistable Effect Y

Memory Devices Base on Organic Bistable Effect Y. T. You, M. L. Wang, X. M. Ding and X. Y. Hou* Department of Physics, Fudan University, Shanghai 200433, China The basic feature for OBDs is the behavior of electrical bistability, exhibiting two states of different conductivities (ON and OFF states). Different models have been proposed trying to explain this phenomenon. In our research, we find the devices also show the bistable effect without the metal layer interposed into the organic layer. Moreover, the devices show the negative differential resistance effect (NDR). NDR Metal cathode Organic layer Anode Glass We find that only some local points on the devices show the bistable effect which indicate the bistable effect maybe localized. Experiment of AFM and CAFM Summary • OBD is a promising memory device which may be widely used in the information industry. • Different models have been proposed trying to explain the organic bistable phenomenon, but until now none of them can explain all of phenomenon the device shows. • In our work, we find the forming of micro-conducting channel may be an explain to our OBDs. References [1] Yang*, etc. Adv. Funct. Mater. 2006, 1001– 1014 [2] J. Campbell Scott* and Luisa D. Bozano, Adv. Mater. 2007, 19, 1452– 1463