M Assi IPNO on behalf of N de

M. Assié (IPNO) on behalf of N. de Séréville (IPNO) & A. Corsi (CEA Saclay) & M. Labiche (STFC Daresbury)

Importance of pitch for 1 st layer of Si d(132 Sn, p)133 Sng. s. @ 10 Me. V/A p(134 Sn, t)132 Sng. s. @ 10 Me. V/A Pitch of < 1 mm is OK in all cases

Particles and g spectroscopy with GASPARD AT GANIL: MUST 2 DSSD+ Si: Li+Cs. I AT GANIL/SPIRAL 2: EXOGAM HPGe PARIS La. Br 3+Na. I GASPARD DSSD+Si+Si IPN Orsay, 02/03/12 Anna Corsi - CEA Saclay / SPh. N 7

Transparency to gamma : PARIS +2 mm Al +GASPARD +2 mm Al+ 4 mm Cu +GASPARD

Gamma detection : Exo. Gam vs PARIS 1 Me. V gamma, b=0. 14 opening angle ≈ 13° (Paris) ≈ 30° (Exo. Gam) Exo. Gam PARIS Intrinsic resolution: La. Br 3= 8. 5 ke. V HPGe=2 ke. V EXOGAM PARIS energy res (FWHM; %) 5% 4% efficiency (%) 43% 50% CONCLUSIONS: Significative improvement in efficiency Detectors at larger distance -> no geometrical constraint on particle detections

Importance of angular coverage Simulations for 132 Sn(d, p)133 Sn YIELDS CROSS-SECTIONS FRESCO (ZR-FRC) angles of interest 3 p 3/2 10 Me. V/u 2 f 7/2 3 p 3/2 2 f 7/2 (5 Me. V/u) 0 40 80 lab proton yield 132 Sn (10 Me. V/u) 0 120 160 40 80 120 160 lab (d, p) @ 10 Me. V GASPARD 70% MUST 2 17% Same E* resolution as MUST 2 Gain in efficiency by a factor of 4 with Gaspard N. de Séréville, IPNO

array : Gain in efficiency The GAmma SPectroscopy and PArticle Detection 4 p silicon array fully integrable in PARIS, AGATA 4 p PARIS cubic configuration Photopeak efficiency 50% Total Na. I spherical config. La. Br 1 2 3 4 5 Energy (Me. V) Efficiency gain ~20 for p-g coincidences for 132 Sn(d, p) @ 10 Me. V/u w/r to previous MUST 2 + EXOGAM setup (target moved backward -> EXOGAM= 10%) Gamma Resolution: ~40 ke. V at 10 Me. V/u with 2 mg/cm 2 CD 2 target (comparable to EXOGAM) Large improvement in particle/gamma efficiency

Efficiency of 20 AGATA+ 12 PARIS Gain of a factor of 2 w/r EXOGAM