Low Noise Amplifier Development at the University of

Low Noise Amplifier Development at the University of Manchester William Mc. Genn, Claudio Jarufe, Daniel White, Danielle George, Gary Fuller Advanced Radio Instrumentation Group PAF Workshop 2019 PAF Workshop 17/09/2019 University of Manchester 1

Contents • LNA work with Commercial Technology • LNA work with Research Technology • The Advanced Radio Instrumentation Group – Our Facilities and Capabilities PAF Workshop 17/09/2019 University of Manchester 2

Next Generation Radio Instrumentation • Increase in the number of front end receiver elements • Focal plane arrays, receivers with many channels • Phased array feeds • Large scale arrays = Many more LNAs! PAF Workshop 17/09/2019 University of Manchester 3

Commercial Semiconductor Technology • Largest III-V pure-play foundry and Ga. As MMIC manufacturer in the world • Repeatability, high yield and high volume • PP 10 Process – 100 nm Gate Length Ga. As p. HEMT – 150 mm Ga. As wafers with 50 or 100 µm thickness – Ft = 135 GHz and Fmax = 185 GHz • Also 150 nm gate length and Ga. N process available PAF Workshop 17/09/2019 University of Manchester 4

LNAs using Commercial Technology Frequency Range SKA Frequency Band Our Status 4 – 15 GHz Band 5 a + 5 b First Prototypes 15 – 25 GHz Band 6 First Prototypes 30 – 50 GHz Band 7 (25 – 50 GHz) First Prototypes 15 – 50 GHz Band 6+7 Work in progress • Square Kilometre Array – Full band 5 and Advanced Single Pixel Feeds and Receivers Programme • Consistent performance across large numbers of LNAs • Second Stage LNAs and IF Amplifiers PAF Workshop 17/09/2019 University of Manchester 5

MMICs PAF Workshop 17/09/2019 University of Manchester 6

4 – 14 GHz Simulations 1 d. B Noise Figure = 75 K Noise Temperature Forward Transmission Noise Figure PAF Workshop 17/09/2019 University of Manchester 7

14 – 24 GHz Simulations 1 d. B Noise Figure = 75 K Noise Temperature Measured results of this LNA to be published at APMC this year 13. 6 - 24 GHz LNA Design for Radio Astronomy using a Commercially Available 100 nm Ga. As p. HEMT Process PAF Workshop 17/09/2019 University of Manchester 8

High Frequency LNAs • Northrup Grumman Corporation • In. P devices, 35 nm and 25 nm gate lengths Frequency Range 30 – 52 GHz 67 – 116 GHz 125 – 211 GHz 211 – 370 GHz PAF Workshop 17/09/2019 385 – 425 GHz ALMA Frequency Band 1 Band 2 + 3 Band 4 + 5 Band 6 + 7 of Manchester Band University 8 (part of) Our Status Design Fabricated Established Designs in Progress 9 Designs in Progress

67 – 116 GHz PAF Workshop 17/09/2019 University of Manchester 10

125 – 211 GHz (Simulations) https: //doi. org/10. 1007/s 10686 -019 -09641 -z PAF Workshop 17/09/2019 University of Manchester 11

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Thank you, Any Questions? Presenter william. mcgenn@manchester. ac. uk Heads of Group danielle. george@Manchester. ac. uk gary. a. fuller@manchester. ac. uk PAF Workshop 17/09/2019 University of Manchester 15