Lenovo Sony Technical Meeting August 27 2003 Sony

Lenovo - Sony Technical Meeting August 27, 2003 Sony Corp. 1

“Aries” Project Members Marketing Mgr China Local Biz Support Akira SHIRAISHI Edward WU/Robert GAO China Local Tech Support Yukihito NISHIMURA Planning Promoter Kazuhiko YOSHIUCHI Electrical Mgr Mechanical Mgr Software Engr Safety Engr Takanori MARUICHI Hiromasa IGUCHI (Isao SUZUKI) Kyusuke KUWAHARA 2

Factories & Manufacturing Capabilities China (Sony Electronics Wuxi)Cell&Pack Japan (Sony Fukushima)Cell& Pack (Sony Tochigi)Cell Taiwan (Solectron Taiwan)Pack Malaysia (Sony Electronics Malaysia)Pack 3

Cell Information n Cylindrical(US 18650) & Polymer 4

Cell Line Up for PC Battery CELL US 18650 G 5 Cylindrical Cell Nominal Capacity PC Polymer Cell Nominal Capacity US 18650 G 7 UP 5541100 CY 2003 CY 2004 CY 2005 2150 m. Ah/8. 1 Wh 2400 m. Ah/9. 1 Wh K 2: 2200 m. Ah/8. 3 Wh K 3: 2400 m. Ah/9. 1 Wh 5

US 18650 G 7, Cell Safety Requirement n Max Charge Voltage; 4. 25 V/cell (Open Circuit Voltage) n Cell Temperature; Charge ; 0 to 60 deg. C Discharge; -20 to 70 deg. C n Charging Current ; less than 0. 7 C If capacity is 2400 m. Ah, 0. 7 C means; 2. 4 A X 0. 7 = 1. 68 A n Discharging Current; less than 1. 0 C If capacity is 2400 m. Ah, 1 C means; 2. 4 A X 1 = 2. 4 A 6

US 18650 G 7, Electrical Info. * Standard Charge Condition Charge Method Charge Up Voltage Charge Current Charge Time Ambiance Temperature : constant current constant voltage : 4. 2± 0. 05 V : 1. 0 A : 5. 0 hours charge : 23 o. C at room temperature, 3. 0 V cut off average capacity 3. 75 V (average discharge voltage) Nominal Capacity (0. 2 C discharge) 2400 m. Ah 9. 0 Wh Rated Capacity (0. 2 C discharge) 2250 m. Ah 8. 4 Wh minimum capacity Capacity at 0. 5 C 2350 m. Ah (8. 6 Wh) average capacity Capacity at 1 C 2300 m. Ah (8. 2 Wh) average capacity Nominal Voltage 3. 7 V Internal Impedance 55 mΩ measured by AC 1 k. Hz Cycle Performance 80 % of Initial capacity at 300 cycles 0. 7 A discharge 7

US 18650 G 7, Mechanical Info. +0. 15 φ18. 2 -0. 20 (Diameter of Body) +0. 2 64. 9 -0. 2 (φ7. 2) -0. 20 φ18. 2 +0. 15 (Diameter of Top) Cell Size (with plastic tube) (0. 3) 8

u. P and AFE Information n Micro Processor---bq 2083 n Analogue Front End---bq 29311 9

bq-u. P Diagram Thermal Fuse with Resistor d-FET Active Fuse c-FET (+) 2 nd Over Charge Protector Analogue Front End Micro Processor (C)Clock (D)Data bq 2083 bq 29311 Batt _Pres Sys _Pres EEPROM (2 k) Thermistor (FETs temp. ) 32 k. Hz Current sense Resistor (10 mΩ) Batt_Alart (-) Thermistor (Cells temp. ) *Battery_pres and Sys_pres are not necessary. 10

bq-u. P Schematic (for example) 11

Mitsubishi-u. P Diagram (for example) Pre-charge Active Fuse Batt + ＴＨ 1 TH 1/TH 2：thermistor Data/CLK 2 nd Over Charge Protector Micro Processor Data Vdd Mitsubishi Clock Batt Pre SYS Pre Batt Alarm EEPROM Clock DIN Analogue Front End IC ＴＨ 2 (output of each cell voltage and current 5 V output, Low Battery voltage detect, FET-SW drive, reset function) DOUT AOUT （Ｖ・Ｉ data） 0. 07Ω 1/2 W Batt - 12

Mechanical Information n n UL requires UL flammability “V-1” for enclosure. Min thickness; 0. 8 mm---PC 1. 2 to 1. 6 mm---PC+ABS 13

Pack Structure (for example) * Connection tab and thermal fuses are replaceable to other components. 14

Development Schedule Fiscal year ’ 03/3 Q 4 Q ’ 04/1 Q 2 Q 3 Q 4 Q 10 11 12 1 2 3 4 5 6 7 8 9 10 11 12 EVT (Hand Made Case) DVT (Hard Tooling Case) Safety Application Design *EVT sample 2 pcs. Hard Tooling (Min. 2 months) *DVT sample 20 pcs. (Min. 1. 5 months) Design Approval PVT MP *PVT sample 50 pcs. Mass Production 15

WELCOME TO SONY ELECTRONICS WUXI（SEW) 索尼電子（無錫）有限公司 16

Wuxi Summary Location： Beijing Wuxi Shanghai East longitude 119º 31’ North latitude 31°７’ East of China、the center of Changjiang delta area 103 Km from Shanghai、147 Km from Nanjing Area： 4, 650 km² DT: 517. 7 km² Population： 5 million DT 1. 2 million Industry lines： Mechanism、Electronics、Light-industries、 Textile、Chemical、Pharmaceutical GDP： 120. 1 billion in 2000 、one of the first ten in the country GDP RMB 28, 000/person、the 4 th in the country Traffic： Express way to SHA & Nanjing、312 National Road、Railway to SHA & Nanjing Education： Jiangnan University 17

New District Industrial Zone Summary Location: At the east-south of Wuxi city, 6 Km from downtown. National Hi-tech Industrial Development, No. 1 of the best 50 national hi-tech industrial development policy: Income tax rate 15% (Normal area 30%, littoral area 24%） 2 years’ income tax-free, 3 years’ income tax half-paid Character: Favorable Hi-tech enterprise , - 5 free 5 half Enterprises come in this district： America : Seagate、Kodak、GE German : SIEMENS、BOSCH、Bayer、HOIST Sweden : VOLVO、 Astra English : COMINS、Rexam Japan : SHARP、Alps、Murata、Sumitomo、Hitachi、 National、Toshiba、Maruko、Nittobo 18

Company Profile Date of incorporation : August 22 nd/2000 ● Leading Company : Energy Company ● Ownership : Sony China 100%, Registered Capital : US$29. 5 mil ● Board Chairman : Hiroshi Nakagawa Vice Board Chairman : Masaru Suzuki Managing Director : Taizo Suzuki ● Address : 62 Block, Wuxi National Hi-tech Industrial Development Zone. Main Products : Lithium-Ion Polymer Battery, Land Area : 110, 000㎡, Factory-site 10, 600 ㎡ ● Rental Address : 52 Block, Wuxi National Hi-tech Industrial Development Zone. Main Products : Projector TV, Factory-site 3, 855㎡ ● New Plant Address : 64 Block, - ditto -. Main Products : Electronics Devices. Land Area : 210, 000㎡, Factory-site ( Initial ) : 19, 100㎡ ● Employee As of Apr/2003 : 1, 305 persons, include 11 persons of Japanese (Battery) ● 19

Sony China Battery Div- Sales Network Marketing & Sales Office Sales Branch Manufacture Beijing (北京) Branch Shanghai (上海)Sales & Marketing Office Shenzheng (深圳) Branch Sony Wuxi (無錫） Electronics Sony Hong Kong 20

Business Terms n n Development Cost : 1) NRE – New model development fee 2) Sample Fee 3) Tooling Fee Delivery Terms : ex-Sony Wuxi Factory or CIF Lenovo Shanghai Factory n Warranty : 12 months after manufacturing date 21

Questions n n Contact window for business matter ? (Procurement for R&D parts and MP parts) Function of Beijing team and Shanghai team ? 22

Appendix-1; Discharge Curves of US 18650 G 6 23

Appendix-2; Charge Curves of US 18650 G 6 24