Lecture 07 Static CMOS Logic CMOS Circuit Styles

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Lecture 07: Static CMOS Logic

Lecture 07: Static CMOS Logic

CMOS Circuit Styles q Static complementary CMOS - except during switching, output connected to

CMOS Circuit Styles q Static complementary CMOS - except during switching, output connected to either VDD or GND via a lowresistance path l high noise margins - full rail to rail swing - VOH and VOL are at VDD and GND, respectively l l q low output impedance, high input impedance no steady state path between VDD and GND (no static power consumption) delay a function of load capacitance and transistor resistance comparable rise and fall times (under the appropriate transistor sizing conditions) Dynamic CMOS - relies on temporary storage of signal values on the capacitance of high-impedance circuit nodes l l simpler, faster gates increased sensitivity to noise

Static Complementary CMOS q Pull-up network (PUN) and pull-down network (PDN) VDD PMOS transistors

Static Complementary CMOS q Pull-up network (PUN) and pull-down network (PDN) VDD PMOS transistors only … In 1 In 2 PUN In. N F(In 1, In 2, …In. N) … In 1 In 2 In. N pull-up: make a connection from VDD to F when F(In 1, In 2, …In. N) = 1 PDN pull-down: make a connection from F to GND when F(In 1, In 2, …In. N) = 0 NMOS transistors only PUN and PDN are dual logic networks

Threshold Drops VDD PUN VDD S D VDD 0 VDD VGS D S CL

Threshold Drops VDD PUN VDD S D VDD 0 VDD VGS D S CL VDD 0 PDN VDD D S CL 0 VDD - VTn CL VGS VDD |VTp| S D CL

Construction of PDN q NMOS devices in series implement a NAND function A •

Construction of PDN q NMOS devices in series implement a NAND function A • B A B q NMOS devices in parallel implement a NOR function A+B A B

Dual PUN and PDN q PUN and PDN are dual networks l l De.

Dual PUN and PDN q PUN and PDN are dual networks l l De. Morgan’s theorems A+B=A • B [!(A + B) = !A • !B or !(A | B) = !A & !B] A • B=A+B [!(A • B) = !A + !B or !(A & B) = !A | !B] a parallel connection of transistors in the PUN corresponds to a series connection of the PDN q Complementary gate is naturally inverting (NAND, NOR, AOI, OAI) q Number of transistors for an N-input logic gate is 2 N

CMOS NAND A B A • B A B A B F 0 0

CMOS NAND A B A • B A B A B F 0 0 1 1 1 0

CMOS NOR B A A+B A B A B F 0 0 1 0

CMOS NOR B A A+B A B A B F 0 0 1 0 1 0 0 1 1 0

Complex CMOS Gate B A C D OUT = !(D + A • (B

Complex CMOS Gate B A C D OUT = !(D + A • (B + C)) A D B C

Standard Cell Layout Methodology Routing channel VDD signals GND What logic function is this?

Standard Cell Layout Methodology Routing channel VDD signals GND What logic function is this?

OAI 21 Logic Graph X A j C C B X = !(C •

OAI 21 Logic Graph X A j C C B X = !(C • (A + B)) C A PUN i i X B VDD j B A B C GND A PDN

Two Stick Layouts of !(C • (A + B)) A C B A B

Two Stick Layouts of !(C • (A + B)) A C B A B C VDD X X GND uninterrupted diffusion strip

Consistent Euler Path q An uninterrupted diffusion strip is possible only if there exists

Consistent Euler Path q An uninterrupted diffusion strip is possible only if there exists a Euler path in the logic graph l Euler path: a path through all nodes in the graph such that each edge is visited once and only once. X C i X B VDD j GND q A A B C For a single poly strip for every input signal, the Euler paths in the PUN and PDN must be consistent (the same)

OAI 22 Logic Graph A C B D X = !((A+B) • (C+D)) C

OAI 22 Logic Graph A C B D X = !((A+B) • (C+D)) C D A B C VDD X B A B C D PUN A GND PDN

OAI 22 Layout A B D C VDD X GND q Some functions have

OAI 22 Layout A B D C VDD X GND q Some functions have no consistent Euler path like x = !(a + bc + de) (but x = !(bc + a + de) does!)

XNOR/XOR Implementation XNOR XOR A A A B B A B A B q

XNOR/XOR Implementation XNOR XOR A A A B B A B A B q How many transistors in each? q Can you create the stick transistor layout for the lower left circuit? A B

VTC is Data-Dependent 0. 5 /0. 25 NMOS 0. 75 /0. 25 PMOS A

VTC is Data-Dependent 0. 5 /0. 25 NMOS 0. 75 /0. 25 PMOS A M 3 B M 4 F= A • B A D M 2 VGS 2 = VA –VDS 1 S D B M 1 VGS 1 = VB q weaker PUN Cint S The threshold voltage of M 2 is higher than M 1 due to the body effect ( ) VTn 1 = VTn 0 VTn 2 = VTn 0 + ( (|2 F| + Vint) - |2 F|) since VSB of M 2 is not zero (when VB = 0) due to the presence of Cint

Static CMOS Full Adder Circuit !Cout = !Cin & (!A | !B) | (!A

Static CMOS Full Adder Circuit !Cout = !Cin & (!A | !B) | (!A & !B) !Sum = Cout & (!A | !B | !Cin) | (!A & !B & !Cin) B A B B A Cin A B Cin !Cout A A B B A !Sum Cin A B Cout = Cin & (A | B) | (A & B) Sum = !Cout & (A | B | Cin) | (A & B & Cin)