Jul 2015 400 V Nonisolation FRD Module Description

Jul. 2015 400 V Non-isolation FRD Module Description Features The Ultra Fast Recovery Diode module devices are optimized to reduce losses and EMI/RFI in high frequency power conditioning electrical systems. These diode modules are ideally suited for power converters, Inverter Welders, motors drives and other applications where switching losses are significant portion of the total losses. • Repetitive Reverse Voltage : V RRM = 400 V • Low Forward Voltage : V F(typ. ) = 1. 16 V • Average Forward Current : I F(Av. )= 200 A@ TC = 100℃ • Ultra-Fast Reverse Recovery Time : trr(typ. ) = 45 ns • Extensive Characterization of Recovery Parameters • Reduced EMI and RFI • Non-isolation Type Package • 175℃ Operating Junction Temperature • Built-in Dual FRD Construction Applications • High Speed & High Power converters, Inverter Welders • Various Switching and Telecommunication Power Supply Package Type & Internal Circuit 3 SM-NI Common Heat Sink Non Isolation Type Absolute Maximum Ratings per leg at TC=25 ℃ unless otherwise noted Symbol Parameter Ratings Unit VRRM Repetitive Peak Reverse Voltage 400 V VR(DC) Reverse DC Voltage 320 V IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Surge Current(one Half Cycle at 60 Hz, Peak Value) TJ Junction Temperature PD Maximum Power Dissipation - TC = 25℃ 400 TC = 100℃ 200 A 3300 A -55 ~ +175 ℃ 1150 W Weight 95 g - Mounting Torque(M 6) 5. 0 N. m - Terminal Torque(M 6) (Typical Including Screws) 3. 0 N. m TSTG Storage Temperature Range -55 ~ +150 ℃ Sunnychip Semiconductor Co. , Ltd. S 2 F 200 N 40 S-NI Rev. 01 1/5 www. sunnychip. com S 2 F 200 N 40 S-NI 400 V Non-isolation FRD Module S 2 F 200 N 40 S-NI －

Jul. 2015 Symbol VR Parameter Conditions Cathode Anode Breakdown Voltage IR=100 u. A Min. Typ. Max. Unit 400 - - V IF=200 A - 1. 16 1. 4 V VF Forward Voltage Drop IF=200 A, TC=100℃ - 1. 06 - V IRRM Diode Peak Reverse Recovery Current VR=400 V, TC=100℃ - - 1 m. A trr Reverse Recovery Time IF=200 A, di/dt=-200 A/us - 90 - ns EAS Avalanche Energy L=5 m. H 300 - - m. J Thermal Characteristics Symbol Rth (J-C) Parameter Thermal Resistance, Junction to case Sunnychip Semiconductor Co. , Ltd. S 2 F 200 N 40 S-NI Rev. 01 2/5 Ratings Unit 0. 13 ℃/W www. sunnychip. com S 2 F 200 N 40 S-NI 400 V Non-isolation FRD Module Electrical Characteristics per diode @TC=25 ℃ unless otherwise noted －

Jul. 2015 Fig. 1. Typical Characteristics: VF vs. IF Fig. 2. Typical Reverse Recovery Time vs. di/dt S 2 F 200 N 40 S-NI 400 V Non-isolation FRD Module Typical Performance Characteristics － Fig. 3. Transient Thermal Impedance(Zthjc) Characteristics Sunnychip Semiconductor Co. , Ltd. S 2 F 200 N 40 S-NI Rev. 01 Fig. 4. Forward Current Derating Curve 3/5 www. sunnychip. com

Jul. 2015 S 2 F 200 N 40 S-NI 400 V Non-isolation FRD Module Package Dimensions 3 SM-NI － (Dimensions in Millimeters) Sunnychip Semiconductor Co. , Ltd. S 2 F 200 N 40 S-NI Rev. 01 4/5 www. sunnychip. com

Jul. 2015 S 2 F 200 N 40 S-NI 400 V Non-isolation FRD Module － DISCLAIMER: The products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. Seller’s customers using or selling seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. Sunnychip reserves the right to change the specifications and circuitry without notice at any time. Sunnychip does not consider responsibility for use of any circuitry other than circuitry entirely included in a Sunnychip product. is a registered trademark of Sunnychip Semiconductor Co. , Ltd. S 2 F 200 N 40 S-NI Rev. 01 5/5 www. sunnychip. com