Introduction to Microelectronic Fabrication by Richard C Jaeger

Introduction to Microelectronic Fabrication by Richard C. Jaeger Distinguished University Professor ECE Department Auburn University Chapter 10 Bipolar Process Integration © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Copyright Notice • © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. • For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1. © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Npn Bipolar Transistors Standard Buried Collector (SBC) Process Collector Base Isolation © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. Emitter Isolation For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Npn Bipolar Transistors SBC Process © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Npn Bipolar Transistors Current Gain & Unity Gain Frequency © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Npn Bipolar Transistors Diffusion Lengths © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Npn Bipolar Transistors Depletion Layer Extents © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Npn Bipolar Transistors Emitter-base Breakdown Voltage © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Npn Bipolar Transistors Circular Emitters • Circular emitters are used to improve device matching • Here a quad of transistors are cross connected to form a differential pair Figure 10. 6 © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Npn Bipolar Transistors Collector-base Breakdown Voltage © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Npn Bipolar Transistors Punch-through Voltage © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

SBC Circuit Elements n+ Resistor (Emitter Diffusion) • Resistor formed using n+ emitter diffusion into the isolation region • Low sheet resistance 1050 W/square • Low breakdown voltage © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

SBC Circuit Elements p-type Resistor (Base Diffusion) • Base diffusion used as a ptype resistor • Typical sheet resistance 100 -300 W/square © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

SBC Circuit Elements n-type Resistor (Epi Layer) • Resistor formed in the an epitaxial tub • High sheet resistance • 1000 -10000 W/square © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

SBC Circuit Elements p-type Pinch Resistor (Also JFET) • Base region “pinched” down to increase sheet resistance • JFET formed by the same structure © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

SBC Circuit Elements Substrate pnp Transistor • Substrate pnp with transistor collector formed by wafer or “substrate” © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

SBC Circuit Elements Lateral pnp Transistor • Lateral pnp • Base width determined by lithography capability • Poor current gain and frequency response compared to vertical device © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

SBC Circuit Elements Schottky Diode • Schottky diode can be readily formed by metal contact to a lightly doped n-type semiconductor • p-type ring added to eliminate edge breakdown • Wilamowski diode [7] adds diffusions to increase breakdown voltage. Depletion layers merge under reverse bias and a breakdown voltage similar to that of a pn junction is achieved. © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

SBC Process Junction Isolation • Adjacent transistors separated by p-diffusion through the epitaxial layer. • Diffusion must be wide enough to prevent space charge layers from merging • Base-isolation spacing must be large enough so that space charge layers do not merge © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

SBC Transistor Layout Design Rules Figure 10. 17 SBC transistor layout using the design rules in Table 10. 1 © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Advanced Bipolar Devices Oxide Isolation © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Advanced Bipolar Devices Oxide Isolation © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Advanced Bipolar Devices Trench Isolation © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Advanced Bipolar Devices Si. Ge HBT © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Advanced Bipolar Devices Si. Ge HBT © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Bipolar Isolation Techniques Collector Diffused Isolation • Figure 10. 22 - Cross section of a transistor fabricated with the CDI process [18] © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Bipolar Isolation Techniques Dielectric Isolation © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Bipolar Isolation Techniques SIMOX © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Bi. CMOS Processes CMOS + Bipolar © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Bi. CMOS Processes CMOS + Bipolar © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Bi. CMOS Processes CMOS + Bipolar © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Bi. CMOS Processes CMOS + Bipolar © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

Bipolar Process Integration References © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.

End of Chapter 10 © 2002 Pearson Education, Inc. , Upper Saddle River, NJ. All rights reserved. This material is protected under all copyright laws as they currently exist. No portion of this material may be reproduced, in any form or by any means, without permission in writing from the publisher. For the exclusive use of adopters of the book Introduction to Microelectronic Fabrication, Second Edition by Richard C. Jaeger. ISBN 0 -201 -44494 -1.