Introduction to CMOS VLSI Design Lecture 15 Nonideal
- Slides: 30
Introduction to CMOS VLSI Design Lecture 15: Nonideal Transistors David Harris 15: Nonideal Transistors Harvey Mudd College Spring 2004 1
Outline q Transistor I-V Review q Nonideal Transistor Behavior – Velocity Saturation – Channel Length Modulation – Body Effect – Leakage – Temperature Sensitivity q Process and Environmental Variations – Process Corners 15: Nonideal Transistors CMOS VLSI Design 2
Ideal Transistor I-V q Shockley 1 st order transistor models 15: Nonideal Transistors CMOS VLSI Design 3
Ideal n. MOS I-V Plot q 180 nm TSMC process q Ideal Models – b = 155(W/L) m. A/V 2 – Vt = 0. 4 V – VDD = 1. 8 V 15: Nonideal Transistors CMOS VLSI Design 4
Simulated n. MOS I-V Plot q 180 nm TSMC process q BSIM 3 v 3 SPICE models q What differs? 15: Nonideal Transistors CMOS VLSI Design 5
Simulated n. MOS I-V Plot q 180 nm TSMC process q BSIM 3 v 3 SPICE models q What differs? – Less ON current – No square law – Current increases in saturation 15: Nonideal Transistors CMOS VLSI Design 6
Velocity Saturation q We assumed carrier velocity is proportional to E-field – v = m. Elat = m. Vds/L q At high fields, this ceases to be true – Carriers scatter off atoms – Velocity reaches vsat • Electrons: 6 -10 x 106 cm/s • Holes: 4 -8 x 106 cm/s – Better model 15: Nonideal Transistors CMOS VLSI Design 7
Vel Sat I-V Effects q Ideal transistor ON current increases with VDD 2 q Velocity-saturated ON current increases with VDD q Real transistors are partially velocity saturated – Approximate with a-power law model – Ids VDDa – 1 < a < 2 determined empirically 15: Nonideal Transistors CMOS VLSI Design 8
a-Power Model 15: Nonideal Transistors CMOS VLSI Design 9
Channel Length Modulation q Reverse-biased p-n junctions form a depletion region – Region between n and p with no carriers – Width of depletion Ld region grows with reverse bias – Leff = L – Ld q Shorter Leff gives more current – Ids increases with Vds – Even in saturation 15: Nonideal Transistors CMOS VLSI Design 10
Chan Length Mod I-V q l = channel length modulation coefficient – not feature size – Empirically fit to I-V characteristics 15: Nonideal Transistors CMOS VLSI Design 11
Body Effect q Vt: gate voltage necessary to invert channel q Increases if source voltage increases because source is connected to the channel q Increase in Vt with Vs is called the body effect 15: Nonideal Transistors CMOS VLSI Design 12
Body Effect Model q fs = surface potential at threshold – Depends on doping level NA – And intrinsic carrier concentration ni q g = body effect coefficient 15: Nonideal Transistors CMOS VLSI Design 13
OFF Transistor Behavior q What about current in cutoff? q Simulated results q What differs? – Current doesn’t go to 0 in cutoff 15: Nonideal Transistors CMOS VLSI Design 14
Leakage Sources q Subthreshold conduction – Transistors can’t abruptly turn ON or OFF q Junction leakage – Reverse-biased PN junction diode current q Gate leakage – Tunneling through ultrathin gate dielectric q Subthreshold leakage is the biggest source in modern transistors 15: Nonideal Transistors CMOS VLSI Design 15
Subthreshold Leakage q Subthreshold leakage exponential with Vgs q n is process dependent, typically 1. 4 -1. 5 15: Nonideal Transistors CMOS VLSI Design 16
DIBL q Drain-Induced Barrier Lowering – Drain voltage also affect Vt – High drain voltage causes subthreshold leakage to ____. 15: Nonideal Transistors CMOS VLSI Design 17
DIBL q Drain-Induced Barrier Lowering – Drain voltage also affect Vt – High drain voltage causes subthreshold leakage to increase. 15: Nonideal Transistors CMOS VLSI Design 18
Junction Leakage q Reverse-biased p-n junctions have some leakage q Is depends on doping levels – And area and perimeter of diffusion regions – Typically < 1 f. A/mm 2 15: Nonideal Transistors CMOS VLSI Design 19
Gate Leakage q Carriers may tunnel thorough very thin gate oxides q Predicted tunneling current (from [Song 01]) q Negligible for older processes q May soon be critically important 15: Nonideal Transistors CMOS VLSI Design 20
Temperature Sensitivity q Increasing temperature – Reduces mobility – Reduces Vt q ION ______ with temperature q IOFF ______ with temperature 15: Nonideal Transistors CMOS VLSI Design 21
Temperature Sensitivity q Increasing temperature – Reduces mobility – Reduces Vt q ION decreases with temperature q IOFF increases with temperature 15: Nonideal Transistors CMOS VLSI Design 22
So What? q So what if transistors are not ideal? – They still behave like switches. q But these effects matter for… – Supply voltage choice – Logical effort – Quiescent power consumption – Pass transistors – Temperature of operation 15: Nonideal Transistors CMOS VLSI Design 23
Parameter Variation q Transistors have uncertainty in parameters – Process: Leff, Vt, tox of n. MOS and p. MOS – Vary around typical (T) values q Fast (F) – Leff: ______ – Vt: ______ – tox: ______ q Slow (S): opposite q Not all parameters are independent for n. MOS and p. MOS 15: Nonideal Transistors CMOS VLSI Design 24
Parameter Variation q Transistors have uncertainty in parameters – Process: Leff, Vt, tox of n. MOS and p. MOS – Vary around typical (T) values q Fast (F) – Leff: short – Vt: low – tox: thin q Slow (S): opposite q Not all parameters are independent for n. MOS and p. MOS 15: Nonideal Transistors CMOS VLSI Design 25
Environmental Variation q VDD and T also vary in time and space q Fast: – VDD: ____ – T: ____ Corner Voltage Temperature 1. 8 70 C F T S 15: Nonideal Transistors CMOS VLSI Design 26
Environmental Variation q VDD and T also vary in time and space q Fast: – VDD: high – T: low Corner Voltage Temperature F 1. 98 0 C T 1. 8 70 C S 1. 62 125 C 15: Nonideal Transistors CMOS VLSI Design 27
Process Corners q Process corners describe worst case variations – If a design works in all corners, it will probably work for any variation. q Describe corner with four letters (T, F, S) – n. MOS speed – p. MOS speed – Voltage – Temperature 15: Nonideal Transistors CMOS VLSI Design 28
Important Corners q Some critical simulation corners include Purpose n. MOS p. MOS VDD Temp Cycle time Power Subthrehold leakage Pseudo-n. MOS 15: Nonideal Transistors CMOS VLSI Design 29
Important Corners q Some critical simulation corners include Purpose n. MOS p. MOS VDD Temp Cycle time S S Power F F Subthrehold leakage F F F S Pseudo-n. MOS S F ? ? 15: Nonideal Transistors CMOS VLSI Design 30
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