Insulin pump HW block diagram Lithium polymer 1

Insulin pump H/W block diagram Lithium polymer 1 cell (3. 7 V) Reference IC 2. 5 V Buck-Boost Regulator (LTC 3531) (REF 5025) Piezo buzzer ADC Reference EXTI RTC Crystal 32. 768 k. Hz (74 HC 4066) Comparator (LMV 7275) (ABS) Crystal 7. 3728 MHz MUX(Touch ) LED Driver Main MCU (LDS 8845) (STM 32 F 103 x) Control & Data pin (ABMM) MCU Reset IC 2. 4’ Touch LCD (KD 024 FM-1) ADC Coin cell (for RTC / V BAT ) Photo Interrupt #2 (SG-211 V) Motor MCU (ATmega 168) (SG-211 V) UART (MIC 811) UART Bluetooth 4. 0 (BOTCLE 110) SD_IO Micro SD (1040310811 ) Photo Interrupt #1 PWM Motor Driver (DRV 8837) DC Motor

Insulin pump IC power dissipation PARTS DESCRIPTION CURRENT @sleep LTC 3531 Regulator Quiescent current : 16 u. A STM 32 F 103 VET 6 Main MC U Stop mode : 25 u. A MIC 811 MCU Reset circuit Supply current : 5 u. A VBAT Battery Monitoring (V divide) 3. 3 V / 200 k = 16. 5 u. A LDS 8845 Touch LED driver Shutdown : 0. 1 u. A REF 5025 Touch ADC reference voltage Quiescent current : 0. 8 m. A LMV 7275 Comparator (EXTI, Sleep mode off) Supply current : 9 u. A 74 HC 4066 MUX (Touch X, Y) Supply current : 40 u. A + Touch power ON (5 m. A? ) ATmega 168 Motor MCU Power down : 1 u. A DRV 8837 Motor driver Sleep mode : 30 n. A SG-211 V Photo interrupters X

H/W block diagram (sleep mode test) u 문제점 : Test 1 - MCU + LCD + SDcard (Touch 기능 제거) § 이론 값 : 16 u. A + 800 u. A + 25 u. A + 200 u. A + 0. 1 u. A + 9 u. A + (40 u. A+Touch power) = 260 u. A § 측정 값 : 2 m. A u STM 32 F 103 x datasheet 1. To further reduce power consumption in Sleep mode the peripheral clocks can be disabled prior to executing the WFI or WFE instructions 2. The ADC or DAC can also consume power during the Stop mode Code 수정 u 결과 § 이론 값 : 16 u. A + 800 u. A + 25 u. A + 200 u. A + 0. 1 u. A + 9 u. A + (40 u. A+Touch power) = 260 u. A § 측정 값 : 400 u. A § SD card 제거 : 180~210 u. A

X project Test version H/W 저전력 / 소형화 AFE Bluetooth 2. 0 AEP device

Test version H/W summary u H/W 구성 l u 11. 1 V(3 cell) / m. Ah Bluetooth 2. 0 l u 저전력/소형화 AFE 3 Ch. ) Lithium polymer battery l u AEP Device (+Lithium polymer, Bluetooth 2. 0, FB 155 BC (Firmtech 社. ) 저전력 소형화 AFE l Instrument Amp : INA 826 l OP-Amp : TSZ 121 l Ch. 1 : Buffer – HPF – INA – HPF – LPF – Amp l Ch. 2 : RC HPF – INA – HPF – LPF – Amp l Ch. 3 : RC HPF – INA – HPG – Amp 선정 근거 : 2 nd meeting 발표자료 참고

Test version H/W verification u 실험 환경 및 Setting l Test device : #1, #2 l 실험 장소 : 국제관 2층 청각교육센터 내 Shield room l LLR (100 Avr, 1~100 Hz, 12, 000 V/V), ABR(500 Avr, 300~3, 000 Hz, 120, 000 V/V) [TEST #1] AEP Device 기능 성능 검증 (Oz, 귓속 신호 Quality 비교) l 소리 검증 : 600 Hz, 1 k. Hz, 8 k. Hz / 10, 30, 50 d. B HL l Test signal : Electrode short noise level, LLR, ABR, EEG, SSVEP [TEST #2] 저전력 / 소형화 AFE Test l Xproject target signal : evoked potential l Test signal : LLR, SSVEP

[Test #1] Test version H/W u 검증 결과 summary Sound Electrode Short Board #1 Board #2 Left O O Right O O LLR setting (100 Avr. ) 0. 3720(μVp-p) 0. 0818(μVrms) 0. 3018(μVp-p) 0. 0629(μVrms) ABR setting (500 Avr. ) 0. 1362(μVp-p) 0. 0267(μVrms) 0. 1330(μVp-p) 0. 0261(μVrms) LLR 측정 O O ABR 측정 O O Ch. 1 O O Ch. 2 O O Ch. 3 O O EEG 측정 (alpha wave test)

[Test #2] Test version H/W u 저전력 / 소형화 AFE IC summary § Instrument Amp Parts Offset voltage CMRR Input impedance Noise @1 -10 Hz (u. Vp-p) Supply current INA 118 50 u. V 110 d. B 10 GΩ 0. 28 0. 7 m. A INA 826 150 u. V 130 d. B 20 GΩ 0. 2 m. A Size Notes Low B. W § OP-Amp Parts Offset voltage CMRR Input impedance Noise @1 -10 Hz (u. Vp-p) Supply current OPA 2211 20 u. V 120 d. B 20 k Ω 0. 08 3. 6 m. A Filter & Amp OPA 192 5 u. V 140 d. B 100 M Ω 1. 3 1 m. A Buffer TSZ 121 5 u. V 122 d. B ? 0. 2 0. 04 m. A Size Notes

[Test #2] Test version H/W u 저전력 / 소형화 AFE Test § AFE #1 Reference Active Buffer Buffe r HPF INA HPF LPF Amp ADC HPF § AFE #2 Reference Active 1. Buffer의 Input impedance 영향 2. INA 증폭 시 Saturation 여부

[Test #2] Test version H/W § AFE #3 Reference Active INA HPF Amp ADC LPF 제거 Aliasing effect에 의한 신호 왜곡 여부 § AFE #4 INA Reference Active INA HPF ADC Amp 제거 / 증폭률 감소 신호 측정 여부 § AFE #5 Reference Active INA ADC HPF 제거 신호 Saturation 여부 Amp ADS 1299 50 10 24 200 1 24

[Test #1] Test version H/W u Electrode short (AEP Board : 0. 3720 μVp-p, 0. 0818 μVrms) LLR setting Noise level (μV p-p / μVrms) 100 Avr. AFE #1 AFE #2 Test 1 0. 5342 0. 088 0. 2451 0. 0441 Test 2 0. 4549 0. 0805 0. 1674 0. 0297 Test 3 0. 5433 0. 0889 0. 1811 0. 0358 Test 4 0. 4764 0. 0840 0. 2179 0. 0372 Test 5 0. 4196 0. 0849 0. 1353 0. 0334 Test 6 0. 4612 0. 0834 0. 2358 0. 0352 0. 4816 0. 0849 0. 1971 0. 0359 Averaging AFE #3 AFE #4 AFE #5 0. 2050 0. 0379 0. 2295 0. 0365 0. 2353 0. 0437 0. 2303 0. 0377 0. 2267 0. 0413 0. 2200 0. 0394 0. 2583 0. 0402 0. 1998 0. 0337 0. 2184 0. 0385 0. 2461 0. 0424 0. 1867 0. 0344 0. 1860 0. 0323 0. 2318 0. 0346 0. 2608 0. 0415 0. 1891 0. 0353 0. 1986 0. 0337 0. 2648 0. 0346 0. 2391 0. 0359 0. 2283 0. 0377 0. 2280 0. 0370 0. 2146 0. 0375

[Test #1] Test version H/W u Electrode short 결과 분석 1. AEP Board setting (Chip만 변경) § AEP : 0. 372 μVp-p / 0. 0818 μVrms 저전력 : 0. 4816 μVp-p / 0. 0849 μVrms (증가) 2. INA 전 Buffer / HPF 영향 § 0. 4816 μVp-p / 0. 0849 μVrms 0. 1971 μVp-p / 0. 0359 μVrms (큰 폭 감소, AEP 보드보다 성능↑) 3. LPF 제거 Aliasing effect § 고주파 성분 증가 (첨부 자료의 파형 참조) 4. Amp 제거 / 증폭률 감소 신호 측정 여부 § 0. 2283 μVp-p / 0. 0377 μVrms 0. 228 μVp-p / 0. 037 μVrms (차이 없음) – HPF 제거 신호 Saturation 여부 § Noise level 차이 없음 § Offset : 3. 5μV 60μV로 증가, 신호 측정을 통해 확인

[Test #2] Test version H/W u 검증 결과 summary Electrode short (LLR / 100 Avr. ) (μV p-p / μVrms) AEP 0. 3720 0. 0818 AFE #1 0. 4816 0. 0849 AFE #2 0. 1971 0. 0359 AFE #3 0. 2283 0. 0377 AFE #4 0. 2280 0. 0370 AFE #5 0. 2146 0. 0375 LLR SSVEP

[Test #1] Test version H/W u Electrode short LLR setting Noise level (μV p-p / μVrms) Board #1 Test 1 0. 3015 0. 0670 0. 3406 0. 0698 Test 2 0. 2990 0. 0744 0. 2839 0. 0611 Test 3 0. 3625 0. 0730 0. 3252 0. 0645 Test 4 0. 3945 0. 0818 0. 3162 0. 0576 Test 5 0. 3733 0. 0707 0. 2282 0. 0473 Test 6 0. 5016 0. 1244 0. 3170 0. 0771 0. 3720 0. 0818 0. 3018 0. 0629 Averaging ABR setting Noise level (μV p-p/ μVrms) Averaging Board #2 Board #1 Board #2 Test 1 0. 1394 0. 0258 0. 1452 0. 0246 Test 2 0. 1184 0. 0236 0. 1138 0. 0248 Test 3 0. 1297 0. 0295 0. 1310 0. 0267 Test 4 0. 1266 0. 0258 0. 1408 0. 0291 Test 5 0. 1637 0. 0274 0. 1416 0. 0259 Test 6 0. 1394 0. 0279 0. 1259 0. 0255 0. 1362 0. 0267 0. 1330 0. 0261

[Test #1] Test version H/W u #1 #2 LLR 측정 (피험자 : 손장재)

[Test #1] Test version H/W u ABR 측정 (피험자 : 권치헌) #1 #2

[Test #1] Test version H/W u Board #1 EEG 측정 (피험자 : 손장재) Open Close Open

[Test #1] Test version H/W u Board #2 EEG 측정 (피험자 : 손장재) Open Close Open

[첨부] Test #1 Electrode short (LLR)

[첨부] Test #2 Electrode short (LLR) AFE #1 AFE #2 AFE #4 AFE #5 AFE #3

[첨부] Test #1 Electrode short (ABR)