IGBT InsulatedGate Bipolar Transistor Combination BJT and MOSFET

IGBT: Insulated-Gate Bipolar Transistor • Combination BJT and MOSFET – High Input Impedance (MOSFET) – Low On-state Conduction Losses (BJT) • High Voltage and Current Ratings • Symbol ECE 442 Power Electronics 1

Cross-Sectional View of an IGBT Metal Silicon Dioxide Metal ECE 442 Power Electronics 2

IGBT Equivalent Circuit for VGE<VT + IBPNP VCC IEPNP ICNPN IBNPN Leakage Current ICPNP Both transistors are OFF IENPN IRBE ECE 442 Power Electronics 3

IGBT Equivalent Circuit for VGE>VT + VCC PNP transistor turns ON, RMOD decreases due to carrier injection from the PNP Emitter. MOS transistor conducts, drawing current from the Base of the PNP transistor. ECE 442 Power Electronics NPN Transistor becomes forward biased at the BE, drawing current from the Base of the PNP transistor. 4

Channel is Induced When VGE>VT RMOD PNP electrons NPN RBE Induced Channel ECE 442 Power Electronics 5

IGBT Output Characteristics Follows an SCR characteristic ECE 442 Power Electronics 6

IGBT Transfer Characteristic ECE 442 Power Electronics 7

IGBT Used as a Switch ECE 442 Power Electronics 8

Fairchild FGA 25 N 120 AND IGBT ECE 442 Power Electronics 9

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