IC Wafer Cutting Wafer Reduce Oxidization Etching Diffusion

半 导 体 制 程 IC制造开始 Wafer Cutting (晶圆切断) Wafer Reduce (晶圆减薄) Oxidization (氧化处理) Etching (蚀刻) Diffusion Implantation (扩散离子植入) Deposition (沉积) Lithography (微影) Wafer Inspection (晶圆检查) 前段結束 后段封装开始 Grind & Dicing (晶圓研磨及切割) Die Attach (上片) Wire. Bonding (焊线) Molding (塑封) 製造完成 Laser mark (激光印字) Laser Cut & package saw Testing (切割成型) (测试) Package (包装)

封 裝 型 式 (PACKAGE) Through Hole Mount DIP Dual In-line Package Typical Features Shape Material Lead Pitch No of I/O Ceramic 2. 54 mm (100 miles) 8 ~64 Plastic SIP Single In-line Package Plastic 2. 54 mm (100 miles) 1 direction lead 3~25

封 裝 型 式 Through Hole Mount Typical Features Shape Material Lead Pitch No of I/O Plastic 2. 54 mm (100 miles) 1 direction lead 16~24 Plastic 1. 778 mm (70 miles) 20 ~64 ZIP Zigzag In-line Package S-DIP Shrink Dual In-line Package

封 裝 型 式 Through Hole Mount Typical Features Shape Material SK-DIP Skinny Dual In-line Package Ceramic Plastic Lead Pitch No of I/O 2. 54 mm (100 miles) half-size pitch in the width direction 24~32 PBGA Ceramic Pin Grid Array Plastic 2. 54 mm (100 miles)

封 裝 型 式 Surface Mount Typical Features Shape Material Lead Pitch No of I/O Plastic 1. 27 mm (50 miles) 2 direction lead 8 ~40 Plastic 1. 0, 0. 8, 0. 65 mm 4 direction lead 88~200 SOP Small Outline Package QFP Quad-Flat Pack

封 裝 型 式 Surface Mount FPG Flat Package of Glass Typical Features Shape Material 1. 27, 0. 762 mm (50, 30 miles) Ceramic 2, 4 direction lead LCC Leadless Chip Carrier Lead Pitch Ceramic 1. 27, 1. 016, 0. 762 mm (50, 40, 30 miles) No of I/O 20~80 20~40

封 裝 型 式 Surface Mount Typical Features Shape Material Lead Pitch No of I/O Ceramic 1. 27 mm (50 miles) j-shape bend 4 direction lead 18~124 Ceramic 0. 5 mm 32~200 PLCC Plastic Leaded Chip Carrier VSQF Very Small Quad Flatpack

Assembly Main Process SMT (Optional) Taping (Optional) Grinding (Optional) Detaping (Optional) Wafer Mount UV Cure (Optional) Die Saw Die Bond Die Cure (Optional) Plasma Wire Bond Molding Post Mold Cure Laser mark Laser Cut Package Saw Cleaner Memory Test Card Asy Card Test Packing for Outgoing

半导体设备供应商介绍-前道部分 PROCESS VENDOR MODEL SMT - PRINTER DEK HOR-2 I SMT – CHIP MOUNT SIMENS HS-60 TAPING NITTO DR 3000 -III INLINE GRINDER & POLISH ACCRETECH PG 300 RM STANDALONE GRINDER DISCO 8560 DETAPING NITTO WAFER MOUNTER NITTO MA 3000 DICING SAW DISCO DFD 6361 TSK A-WD-300 T MA 3000

半导体设备供应商介绍-前道部分 PROCESS VENDOR MODEL DIE BOND HITACHI DB 700 ESEC 2007/2008 ASM 889898 CURE OVEN C-SUN QDM-4 S WIRE BONDER K&S MAXUM ULTRA SKW UTC-2000 ASM Eagle 60 MARCH AP 1000 TEPLA 400 TOWA YPS-SERIES ASA OMEGA 3. 8 PLASMA CLEAN Mold

常用术语介绍 1. SOP-Standard Operation Procedure 标准操作手册 2. WI – Working Instruction 作业指导书 3. PM – Preventive Maintenance 预防性维护 4. FMEA- Failure Mode Effect Analysis 失效模式影响分析 5. SPC- Statistical Process Control 统计制程控制 6. DOE- Design Of Experiment 程试验设计 7. IQC/OQC-Incoming/Outing Quality Control 来料/出货质量检验 8. MTBA/MTBF-Mean Time between assist/Failure 平均无故障 作时间 9. CPK-品质参数 10. UPH-Units Per Hour 每小时产出 11. QC 7 Tools ( Quality Control 品管七 具 ) 12. OCAP ( Out of Control Action Plan 异常改善计划 ) 13. 8 D ( 问题解决八大步骤 ) 14. ECN Engineering Change Notice ( 制程变更通知 ) 15. ISO 9001， 14001 – 质量管理体系

San. Disk Assembly Process Flow San. Disk 封装 艺流程 SMT 表面贴装 前道 ＦＯＬ Wafer IQC 来料检验 Mold 模塑 Die Prepare 芯片预处理 PMC 模塑后烘烤 Ｄie Attach 芯片粘贴 Laser Mark 激光印字 Plasma Clean 清洗 Laser Cutting 激光切割 Wire Bond 引线键合 Plasma Clean 清洗 Saw Singulation 切割成型 EVI 产品目检 后道 EOL

SMT（表面贴装） ---包括锡膏印刷(Solder paste printing), 置件(Chip shooting), 回流焊(Reflow), DI水清洗(DI water cleaning), 自动光学检查(Automatic optical inspection), 使贴片零件牢固焊接在substrate上 Substrate Solder paste pringting Chip shooting Reflow Automatic optical inpection DI water cleaning Oven Nozzle Stencil PAD Solder paste PAD Capacitor Hot wind DI water Camera

Die Prepare(芯片预处理) To Grind the wafer to target thickness then separate to single chip ---包括来片目检(Wafer Incoming), 贴膜(Wafer Tape), 磨片(Back Grind), 剥膜(Detape), 贴片(Wafer Mount), 切割(Wafer Saw)等系列 序, 使芯片达到 艺所要求的形状, 厚度和尺寸, 并经过芯片目 检(DVI)检测出所有由于芯片生产, 分类或处理不当造成的废品. Wafer tape Back Grind Wafer Detape Wafer Saw

Inline Grinding & Polish -- Accretech PG 300 RM Coarse Grind 90% Fine Grind 10% Centrifugal Clean Transfer Alignment & Centering De-taping Transfer Back Side Upward Mount Key Technology: 1. Low Thickness Variation: +/_ 1. 5 Micron 2. Good Roughness: +/- 0. 2 Micron 3. Thin Wafer Capacity: Up to 50 Micron 4. All-In-One solution , Zero Handle Risk

2. Grinding 相关材料 A TAPE麦拉 B Grinding 砂轮 C WAFER CASSETTLE

艺对TAPE麦拉的要求： 1。MOUNT l. No delamination 2。SAW STRONG ADHESION l. No die flying off l. No die crack

艺对麦拉的要求： 3。EXPANDING l. Die TAPE ELONGATION distance l. Uniformity 4。PICKING UP WEAK ADHESION l. No contamination

4. Grinding 配套设备 A Taping 贴膜机 B Detaping 揭膜机 C Wafer Mounter 贴膜机

Wafer Taping -- Nitto DR 300 II Taping Alignment Cut Tape Transfer Back Key Technology: Transfer 1. High Transfer Accuracy: +/_ 2 Micron 2. High Cut Accuracy : +/- 0. 2 mm 3. High Throughput : 50 pcs wafer / Hour 4. Zero Void and Zero Wafer Broken

Detaping

l Wafer mount Wafer frame

晶 圓 切 割 (Dicing) Dicing 设备: A DISCO 6361 系列 B ACCERTECH 东京精密AW-300 T

Main Sections Introduction l Cutting Area: Spindles (Blade, Flange, Carbon Brush), Cutting Table, Axes (X, Y 1, Y 2, Z 1, Z 2, Theta), OPC l Loader Units: Spinner, Elevator, Cassette, Rotation Arm

Blade Close-View Cooling Water Nozzle Blade Cutting Water Nozzle

Die Sawing – Disco 6361 Key Technology: Rear 1. Twin-Spindle Structure. 2. X-axis speed: up to 600 mm/s. 3. Spindle Rotary Speed : Up to 45000 RPM. 4. Cutting Speed: Up to 80 mm/s. 5. Z-axis repeatability: 1 um. 6. Positioning Accuracy: 3 um. Front

A Few Concepts l l l BBD (Blade Broken Detector) Cutter-set: Contact and Optical Precision Inspection Up-Cut and Down-Cut Cut-in and Cut-remain

晶 圓 切 割 (Dicing) Dicing 相关 艺 A Die Chipping 芯片崩角 B Die Corrosive 芯片腐蚀 C Die Flying 芯片飞片

Wmax , Wmin , Lmax , DDY , DY 規格— DY< 0. 008 mm Wmax < 0. 070 mm Wmin < 0. 8*刀 厚 Lmax < 0. 035

切割時之轉速予切速: a. 轉速 : 指的是切割刀自身的轉速 b. 切速: 指的是Wafer移動速度. 主軸轉速: S 1230: 30000~45000 RPM S 1440: 30000~45000 RPM 27 HEED: 35000~45000 RPM 27 HCCD: 35000~45000 RPM 27 HDDC: 35000~45000 RPM

TAPE 粘度对SAW製程的影響 Mounting Tape (膠膜黏力 ) - TAPE ADHESION + - Cut Quality + 2. 較好的切割品質。 + Flying Die - 潛在風險 - Cost + 分析 : 使用較黏膠膜可獲得 1. 沒有飛 Die。 Die Attach process pick up die 影響。 - Die Ejection + P 10

Die Attach(芯片粘贴) To attach single die to SMTed substrate ---把芯片粘贴到已经过表面贴装(SMT)和预烘烤(Pre-bake)后的基片上, 或芯片粘贴到芯片上, 并经 过芯片粘贴后烘烤(Die Attach Cure)固化粘结剂. Passive chip (capacitor) Substrate

上片 (Die Bond) Die Bond 设备 A HITACHI DB 700 B ESEC 2007/2008 系列 C ASM 829/889/898 系列

Die Attach – Hitachi DB 700 Key Technology: 1. Bonding speed: 30 ms/die; 2. Bonding Accuracy X/Y: 25 um; 3. Angle Accuracy : 0. 5 degree; 4. Thin Die Pick Up Solution: Up to 2 mils (Electromagnetic & Multi-Step Mode); 5. Integrate & Inline Module : X Memory + 1 controller; 6. Multi-Die stack Die Capacity: Up to 8 layers once;

上片 (Die Bond) 2. Die Bond 相关 艺 X, Y PLACEMENT ; BLT; TILT; ROTATION THETA; CPK DIE ROTATION THETA PLACEMENT ACCURACY X, Y (CPK) BONDLINE THICKNESS (CPK) VOID DIE SHARE

上片 (Die Bond) 3. Die Bond 相关材料 A Substrate / Lead frame B Die Attach Film C Wafer after Saw D Magazine 弹夹

Substrate Solder Mask Cu Ni Core Basic Structure: Ball Pad Via Hole Au Bond Finger

Substrate Basic Information Core： 玻璃纤维+树脂，0. 1 -0. 4 mm 镀铜层： 25 um+/-5 um 镀镍层： 5. 0 -12. 5 um 镀金层： 0. 50 -1. 10 um Solder Mask： 25 um+/-5 um 总厚度： 0. 10 -0. 56 mm

C Wafer mapping 应用

Wire Bond – K&S Ultra Gold Wire Key Technology: 1. Die pad opening(Min. ): 45 um. Capillary Bond Force 2. Die pads pitch (Min. ): 60 µm. 3. Substrate Lead width & Pitch Ultrasonic Power (Min. ): 40 µm & 25 µm. 4. Multi-Loop Selection cover all Package. 5. Stack die reverse Bonding to Decrease Total package Thickness. Die Pad Heater Substrate Lead

焊线(Wire Bond) 1. Wire Bond 相关 艺 u Pad Open & Bond Pad Pitch u Ball Size u Ball Thickness u Loop height u Wire Pull u Ball short u Crater Test

焊线(Wire Bond) 2. Wire Bond 相关材料 u Substrate with die u Capillary u Gold Wire

Capillary u u u TIP. . …… Pad Pitch Pad pitch x 1. 3 = TIP Hole. . …. . Wire Diameter Wire diameter + 0. 3~0. 5 = H CD………Pad size/open/1 st Ball CD + 0. 4 ~ 0. 6 = 1 st Bond Ball size FA & OR…. Pad pitch(um) FA >100 0, 4 ~90/100 4, 8, 11 <90 11, 15 IC type …… loop type

Gold Wire u Gold Wire Manufacturer (Nippon , SUMTOMO , TANAKA…. ) u Gold Wire Data ( Wire Diameter , Type , EL , TS)

焊线(Wire Bond) 3. Wire Bond 辅助设备 A Microscope 用于测loop height B Wire Pull 拉力计（DAGE 4000） C Ball Shear 球剪切力计 D Plasma 微波/等离子清洗计

Ball Size & Ball Thickness u 單位: um，Mil u 量測倍率: 50 X u Ball Thickness 計算公式 u 60 um BPP ≧ 1/2 WD=50% u 60 um BPP ≦ 1/2 WD=40%~50% Ball Size Ball Thickness Ball Size

Loop Height u 單位: um，Mil u 量測倍率: 20 X Loop Height 線長

Wire Pull u 1 Lifted Bond (Rejected) u 2 Break at neck (Refer wire-pull spec) u 3 Break at wire ( Refer wire-pull spec) u 4 Break at stitch (Refer stitch-pull spec) u 5 Lifted weld (Rejected)

Ball Shear u 單位: gram or g/mil² u Ball Shear 計算公式 u Intermetallic（IMC有75%的共晶, Shear Strength標準為＞ 6. 0 g/mil²。 u. SHEAR STRENGTH＝Ball Shear/Area (g/mil²) Ball Shear = x; Ball Size = y; Area = π(y/2) ² x/π(y/2) ² = z g/mil²

等离子 艺 Plasma Process l 气相---固相表面相互作用 Gas Phase - Solid Phase Interaction • Physical and Chemical l 分子级污染物去除 Molecular Level Removal of Contaminants • 30 to 300 Angstroms l 可去除污染物包括 Contaminants Removed l 难去除污染物包括 Difficult Contaminants – Finger Prints – Flux – Gross Contaminants – Organic Residue – Photoresist – Metal Salts (Nickel Hydroxide) – Oxides – Epoxy – Solder Mask

Plasma Clean – March AP 1000 Well Cleaned with Plasma Ar + + Electrode Ar + + + PCB Substrate Plasma Ar Die Chip <8 o Key Technology: 1. Argon Condition, No oxidation. + 2. Vacuum Pump dust collector. 3. Clean Level : blob Test Angle < 8 Degree.

Organic Contamination vs Contact Angle No Clean (Organic Contamination) Well Cleaned with Plasma Water Drop Chip > 80 o Chip <8 o

塑封 (Molding) 1. Molding设备 A TOWA YPS & Y-Series B ASA OMEGA 3. 8

塑封 (Molding) 2. Molding相关材料 A Compound 塑封胶 B Mold Chase 塑封模具

Thanks