High Performance Next Generation Memory Technology and Beyond
High Performance Next Generation Memory Technology and Beyond Dean Klein, Vice President of Market Development Micron Technology, Inc. 2003 Micron Technology, Inc. All rights reserved. Information is subject to change without notice.
Data Transfer Rate Trends PC Main Memory Predicted DDR 2 DDR SDRAM bandwidth requirements are doubling approximately every 3 years DDR 3
256 Mb DDR 2 Preferred Memory Solution for 512 MB Dual Channel Systems 4 Signal integrity limits bus loading at higher transfer rates. No longer able to put 4 DIMMs on one memory channel Total 4. 26 GB/s for DDR 533 Memory Controller 4. 26 GB/s 5 1 2 M B D I MM 51 2 M B D I M M Total 8. 52 GB/s for DDR 533 Memory Controller 4. 26 GB/s Dual channel provides 2 X the bandwidth 2 5 6 M B D I MM 25 6 M B D I M M
GDDR 3 4 Graphics memory will lead I/O definition for desktop and server main memory 4 GDDR 3 features ■ 8 Meg x 32 configuration ■ Up to 800 MHz (1600 Mb/s) ■ 1. 8 V VDD/VDDQ ■ Four internal banks ■ 4 n prefetch ■ ODT ■ Calibrated output drive
Memory per Pin Data Rate Trends Graphics Device Data Rate (Mbs per Pin) 4000 GDDR 4 3000 GDDR 3 2000 1000 DDR 3 DDR 2 PC 0 1999 2000 2001 2002 2003 2004 Year 2005 2006 2007 2008
DDR 3 Signaling 4 DDR 3 requirement is 800 MT/s-1600 MT/s 4 Migration can leverage from GDDR 3 n n n GDDR 3 is designed for operation at 1000 MT/s-1500 MT/s DQs on GDDR 3 are DQs utilize VDDQ terminated pull drivers Typical 128 bit Bus/Dual Load Graphics System point to point push-
DDR 3 PC Data Bus Module 1 Single DIMM in point to point configuration Rank 1 Rank 2 Term RCVR System Controller Writes Time (nanoseconds) 4 On die termination simulations with two Signal Voltage (V) Reads loads at 1066 MT/s data rate Time (nanoseconds) ■ Improved signal integrity
DDR 3 Server Data Bus Rank 1 Hubs added to DIMM drive DRAMs and allow multiple DIMMs per DQ Bus Module 1 Module 2 Rank 1 Term RCVR Data Buffer DRVR RCVR Rank 2 DRVR RCVR DRVR System Controller High Speed System Bus More DIMMs Writes Signal Voltage (V) Reads Time (nanoseconds) 4 On-die termination simulations with two loads at 1600 MT/s Time (nanoseconds) data rate
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