H F W Sadrozinski MAP Si Ge Amp

H. F. -W. Sadrozinski, "MAP Si. Ge Amp", Sept 19, 2020 Si. Ge Frontend for Monolithic Active Pixel 1. Time resolution and power consumption of a monolithic silicon pixel prototype in Si. Ge Bi. CMOS technology, L. Paolozzi, ar. Xiv: 2005. 14161 v 2 2. A 50 ps resolution monolithic active pixel sensor without internal gain in Si. Ge Bi. CMOS technology G. Iacobucci, Ar. Xiv e. Print: 1908. 09709, 2019 JINST 14 P 11008 Detector: Depleted region: 26 µm Resistivity: 50 cm Pixel Capacitance: 70 f. F Discussed below 1

Si. Ge Frontend for Monolithic Active Pixel H. F. -W. Sadrozinski, "MAP Si. Ge Amp", Sept 19, 2020 1. A monolithic ASIC demonstrator for the Thin Time-of-Flight PET scanner P. Valerio et al, 2019 JINST 14 P 07013, Ar. Xiv e. Print: 1811. 10246 2

H. F. -W. Sadrozinski, "MAP Si. Ge Amp", Sept 19, 2020 Comparison LGAD – MAP with Si. Ge fronend: Resolution has fairly large systematic errors 45 ps seems possible at high amplifier current Thin (20 µm) LGAD on UCSC board 20 ps time resolution limited by S/N Reducing noise important Assumption that we will be limited to gain = 10 3

H. F. -W. Sadrozinski, "MAP Si. Ge Amp", Sept 19, 2020 LGAD with Si. Ge Amp of MAP 500 μm pixels on 2 cmx 2 cm chip Abe’s limit is = 1 W / 2 cmx 2 cm chip For Si. Ge AMP, use charge How fast is MAP pulse? From resolution, about 700 ps? How fast is Si. Ge AMP? 70 f. F 4 p. F ~100 f. F ? 4