Ga NBased Transistor Energy Converter SubGHz Yosef Bernstein
Ga. N-Based Transistor Energy Converter @ Sub-GHz Yosef Bernstein Ilan Aharon 1 02/11/2020
Converters basics 2 02/11/2020
Buck (step down) Converter 3 02/11/2020
Boost (step up) Converter 4 02/11/2020
Converter on Chip 5 02/11/2020
Ga. N FET versus Silicon MOSFET 6 02/11/2020
Ga. N Switch 7 02/11/2020
Ga. N Switch 8 02/11/2020
EPC application note AN 003: Using Enhancement Mode Ga. N-on-Silicon Power FETs (e. Ga. N® FETs) Infineon-Application. Note_Cool. Ga. N_600 V_emode_HEMTs-AN-v 01_00 -EN 9 02/11/2020
Buck Converter CCM transfer function Minimal inductance for CCM DCM transfer function 10 02/11/2020
Buck Converter Inductor average current Inductor peak current Switch RMS current Charge Time and Frequency 11 02/11/2020
Buck Converter 12 02/11/2020
Boost Converter CCM transfer function Minimal inductance for CCM DCM transfer function Frequency versus Current 13 02/11/2020
Boost Converter Diode average current Inductor peak current Switch RMS current Charge Time and Frequency 14 02/11/2020
Boost Converter 15 02/11/2020
EPC Ga. N max Freq. Vgs Vds 6 100 16 Part Rds (m. Ohm) EPC 2038 0. 33 EPC 2037 0. 55 EPC 8010 0. 16 EPC 2036 0. 73 EPC 2007 C 0. 3 EPC 2051 0. 25 EPC 2016 C 0. 16 EPC 2052 0. 135 EPC 2045 0. 7 EPC 2001 C 0. 7 EPC 2053 0. 38 EPC 2032 0. 4 EPC 2022 0. 32 Qg Qoss (n. C) 0. 04 0. 134 0. 12 0. 6 0. 36 2. 2 0. 7 3. 9 1. 6 8. 3 1. 7 7. 3 3. 4 16 3. 6 13 5. 9 25 7. 5 31 12 45 12 66 13. 2 71 Ia Ipulse Rg 0. 5 4. 8 1. 7 2. 4 0. 5 4 7. 5 0. 3 1. 7 18 0. 6 6 40 0. 4 5. 7 37 0. 3 18 75 0. 4 8. 2 74 0. 7 16 130 0. 6 36 150 0. 3 48 246 0. 6 48 340 0. 4 90 390 0. 3 Tout (ns) Fo, max(MHz) Tin(ns) Fin, max(MHz) 0. 0022 135685. 2 0. 070 4261. 364 0. 0165 18181. 8 0. 019 15652. 174 0. 0176 17045. 5 0. 036 8333. 333 0. 1424 2107. 5 0. 140 2142. 857 0. 1245 2409. 6 0. 213 1406. 250 0. 0913 3287. 7 0. 170 1764. 706 0. 1280 2343. 8 0. 453 661. 765 0. 0878 3418. 8 0. 840 357. 143 0. 8750 342. 9 1. 180 254. 237 1. 0850 276. 5 0. 750 400. 000 0. 8550 350. 9 2. 400 125. 000 1. 3200 227. 3 1. 600 187. 500 1. 1360 264. 1 1. 320 227. 273 Fsw 4261. 364 15652. 174 8333. 333 2107. 482 1406. 250 1764. 706 661. 765 357. 143 254. 237 276. 498 125. 000 187. 500 227. 273 02/11/2020
EPC Ga. N max Freq. Vgs Vds 6 100 17 Part Rds (m. Ohm) EPC 2038 0. 33 EPC 2037 0. 55 EPC 8010 0. 16 EPC 2036 0. 73 EPC 2007 C 0. 3 EPC 2051 0. 25 EPC 2016 C 0. 16 EPC 2052 0. 135 EPC 2045 0. 7 EPC 2001 C 0. 7 EPC 2053 0. 38 EPC 2032 0. 4 EPC 2022 0. 32 Qg Qoss (n. C) 0. 04 0. 134 0. 12 0. 6 0. 36 2. 2 0. 7 3. 9 1. 6 8. 3 1. 7 7. 3 3. 4 16 3. 6 13 5. 9 25 7. 5 31 12 45 12 66 13. 2 71 Ia Ipulse Rg Tout (ns) Fo, max(MHz) Tin(ns) Fin, max(MHz) 0. 5 0. 96 0. 0022 135685. 2 0. 014 21306. 818 1. 7 2. 4 0. 1 0. 0165 18181. 8 0. 004 78260. 870 4 7. 5 0. 06 0. 0176 17045. 5 0. 007 41666. 667 1. 7 18 0. 12 0. 1424 2107. 5 0. 028 10714. 286 6 40 0. 08 0. 1245 2409. 6 0. 043 7031. 250 5. 7 37 0. 06 0. 0913 3287. 7 0. 034 8823. 529 18 75 0. 08 0. 1280 2343. 8 0. 091 3308. 824 8. 2 74 0. 14 0. 0878 3418. 8 0. 168 1785. 714 16 130 0. 12 0. 8750 342. 9 0. 236 1271. 186 36 150 0. 06 1. 0850 276. 5 0. 150 2000. 000 48 246 0. 12 0. 8550 350. 9 0. 480 625. 000 48 340 0. 08 1. 3200 227. 3 0. 320 937. 500 90 390 0. 06 1. 1360 264. 1 0. 264 1136. 364 Fsw 21306. 818 18181. 818 17045. 455 2107. 482 2409. 639 3287. 671 2343. 750 1785. 714 342. 857 276. 498 350. 877 227. 273 264. 085 02/11/2020
EPC Ga. N Gate Losses Fsw [MHz] 200 Vgs 6 Vds 100 18 Part EPC 2038 EPC 2037 EPC 8010 EPC 2036 EPC 2007 C EPC 2051 EPC 2016 C EPC 2052 EPC 2045 EPC 2001 C EPC 2053 EPC 2032 EPC 2022 Qg 0. 04 0. 12 0. 36 0. 7 1. 6 1. 7 3. 4 3. 6 5. 9 7. 5 12 12 13. 2 Rg 4. 8 0. 5 0. 3 0. 6 0. 4 0. 3 0. 4 0. 7 0. 6 0. 3 0. 6 0. 4 0. 3 Tin(ns) Fin, max(MHz) 0. 070 4261. 364 0. 019 15652. 174 0. 036 8333. 333 0. 140 2142. 857 0. 213 1406. 250 0. 170 1764. 706 0. 453 661. 765 0. 840 357. 143 1. 180 254. 237 0. 750 400. 000 2. 400 125. 000 1. 600 187. 500 1. 320 227. 273 Fsw 4261. 364 15652. 174 8333. 333 2107. 482 1406. 250 1764. 706 661. 765 357. 143 254. 237 276. 498 125. 000 187. 500 227. 273 Pg 0. 026 0. 069 0. 216 0. 420 0. 960 1. 020 2. 040 2. 160 3. 540 4. 500 7. 200 7. 920 02/11/2020
Ga. N FET versus Silicon MOSFET 19 02/11/2020
Interleaving 20 02/11/2020
Applications • DC-DC converters • LIDAR • Envelop Tracker • Amplifiers 21 02/11/2020
200 MHz Boost converter 3. 3 V to 9 V 22 02/11/2020
200 MHz Super Boost 23 02/11/2020
Output (94. 3% efficiency) with 4 W per stage on the driver 24 02/11/2020
Power In : 680 W - Power Out : 590 W = 90 W / 3 stages = 30 W/stage 25 Power per stage (Approximate) %loss Main Switch 20 W 66% (on-chip) Diode Loss 8 W 26% Resistor/Driver 5 W Resistor 1 W Oscillator 20% Control Voltage for PWM/Driver <1 W 1% 02/11/2020
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