FRAM Solution for Smart EMeters Replace EEPROMs with

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F-RAM Solution for Smart E-Meters Replace EEPROMs with a Superior Solution 001 -87700 Rev

F-RAM Solution for Smart E-Meters Replace EEPROMs with a Superior Solution 001 -87700 Rev *C Owner: EWOO Tech lead: KEER Presentation: To provide an engineering overview to customers for a Cypress solution. Title slide: To define what the presentation will cover. The subtitle is a one-sentence statement of the key opportunity.

E-Meters Are Getting Smarter 33 million Smart E-Meters will be produced this year, with

E-Meters Are Getting Smarter 33 million Smart E-Meters will be produced this year, with a 20. 7% CAGR through 2017 Smart E-Meter By Landis + Gyr Electric utilities are demanding more smart functionality from E-Meters Time-of-day usage tracking Power quality monitoring Real-time communication Tamper-detection sensors and alarms This functionality requires new components–including additional nonvolatile memory–resulting in higher BOM cost and power consumption Smart E-Meter BOM cost and power consumption are key design parameters High demand for Smart E-Meters has increased competition Utilities demand low-power Smart E-Meters to meet regional regulatory requirements You require low-cost and low-power nonvolatile memory solutions 001 -87700 Rev *C Owner: EWOO Tech lead: KEER Market Vision: To define the market opportunity. Presents compelling data and end product photos relevant to the local market. 3

Terms You Will Hear Today Smart E-Meter An advanced electric meter that time-stamps and

Terms You Will Hear Today Smart E-Meter An advanced electric meter that time-stamps and records consumption and device diagnostic data and automatically communicates it to a utility company Electrically Erasable Programmable Read-Only Memory (EEPROM) A common nonvolatile memory that uses floating-gate technology to store data Soak Time The 5 ms required to complete an EEPROM Page Write after the data is presented at the input buffers Write On Power Loss A failsafe method in which an MCU senses system power loss and instantly performs a Page Write of critical data to nonvolatile memory Write Endurance The number of times a nonvolatile memory cell can be rewritten before it wears out Wear Leveling A method to prolong EEPROM Write Endurance that uses an EEPROM with up to 8 x excess capacity and a software algorithm to move storage to unused memory addresses before the Write Endurance limit on an active address is reached Ferroelectric Random Access Memory (F-RAM)™ A fast-write, high-endurance, low-power nonvolatile memory that uses ferroelectric technology to store data 001 -87700 Rev *C Owner: EWOO Tech lead: KEER Terms of Art (To. As): To clearly define for engineers all To. As used in the presentation. To carefully and fully define Cypress-proprietary To. As needed to explain our system solution. 4

Design Problems Engineers Face 1. Smart E-Meters must log all energy consumption and diagnostic

Design Problems Engineers Face 1. Smart E-Meters must log all energy consumption and diagnostic data Smart E-Meter EEPROMs require 5 ms of active power per Page Write for Soak Time requires additional capacitors or batteries to perform a Page Write On Power Loss 2. Typical Smart E-Meter applications exceed the 1 million write-cycle limitation of EEPROM Wear Leveling is required to improve the Write Endurance of EEPROM over a Smart E-Meter’s 15 -year lifespan Wear Leveling requires up to 8 x the memory density and additional software, increasing cost 3. Utility companies prefer Smart E-Meters with low power budgets Many utility companies specify a maximum 1 -W consumption for a Smart E-Meter Eliminating Soak Time provides you with a larger power budget for other components F-RAM solves these problems Requires no Soak Time, enabling fast write Requires no additional capacitors or batteries Provides 100 trillion write cycles (200 x the lifespan of a typical Smart E-Meter) Consumes 2 x to 5 x less active power than EEPROM F-RAM offers you an opportunity to replace EEPROMs with a superior solution 001 -87700 Rev *C Owner: EWOO Tech lead: KEER Traditional Approach and Challenges: To present the traditional approach and the challenges engineers will face when using it to realize the Market Vision. Ends with a one-sentence segue clearly stating the benefit of the Cypress solution. 5

F-RAM Solution: Simple and Superior Simplify a complex, EEPROM-based design… By choosing F-RAM as

F-RAM Solution: Simple and Superior Simplify a complex, EEPROM-based design… By choosing F-RAM as your nonvolatile memory solution… To produce superior Smart E-Meters at a lower cost. 2 x EEPROM, up to 8 x density for Wear Leveling software algorithm to increase EEPROM Write Endurance File System F-RAM pin-to-pin replacement for EEPROM SOIC 8 Controller Memory Worn Cell Smart E-Meter by Landis + Gyr 2. 2 -m. F capacitor to hold up system for 5 ms per page write for Soak Time 001 -87700 Rev *C Owner: EWOO Tech lead: KEER Cypress Solution: To introduce CY products and show compellingly how they solve the challenges highlighted on the previous slide. To provide a short, clear list of what to do to get started. 6

Design a Smart E-Meter with F-RAM Example F-RAM is used as RAM and ROM

Design a Smart E-Meter with F-RAM Example F-RAM is used as RAM and ROM Power usage data logging Diagnostic data logging Calibration data storage Factory default code storage Dynamic tariff data storage Dynamic configuration code storage F-RAM simplifies your design Replaces multiple EEPROMs Reduces board capacitance Eliminates Wear Leveling Serial F-RAM part options Densities: 4 Kb – 2 Mb Voltages: 2. 0 – 5. 5 V Interfaces: SPI: 10 – 40 MHz I 2 C: 1. 0 – 3. 4 MHz Packages: SOIC 8, EIAJ 8, TDFN 8 Cypress F-RAM offers you a flexible and simple low-power nonvolatile memory solution 001 -87700 Rev *C Owner: EWOO Tech lead: KEER Cypress Solution: To give details on CY products and show compellingly how they solve the challenges highlighted on a previous slide. To provide a short, clear list of what to do to get started. 6 b

F-RAM™ Solution Example – Smart E-Meters Block Diagram F-RAM Value Design Challenges Capture real-time

F-RAM™ Solution Example – Smart E-Meters Block Diagram F-RAM Value Design Challenges Capture real-time data instantly on power loss Ensure power to complete a Write On Power Loss Log data up to every second over a 15 -year product lifespan Minimize the system power budget F-RAM Solution Requires no Soak Time to write data Requires no additional capacitors or batteries Provides 100 trillion write cycles Consumes 2 x to 5 x less active power than EEPROM Tamper Sensor F-RAM Nonvolatile Memory 2 4 2 Voltage Sensor Microcontroller Current Sensor Wired I/O 4 Wireless Communications 4 Powerline Communications 8 Suggested Collateral LCD App Notes: F-RAM for Smart E-Meters SPI Guide for F-RAM Data Protection During Power Cycles Smart E-Meter by Landis + Gyr How To Get Started Download and view F-RAM App Notes Order Samples from your distributor: Cypress Distributor List Register at Cypress. com to access online technical support 001 -87700 Rev *C Owner: EWOO Tech lead: KEER Solution Examples: To give detailed one-page Solution Examples from the field in the specified format. 7 a

Cypress F-RAM vs. Competition F-RAM EEPROM NOR Flash MRAM SPI Speed 40 MHz 20

Cypress F-RAM vs. Competition F-RAM EEPROM NOR Flash MRAM SPI Speed 40 MHz 20 MHz 50 MHz 40 MHz I 2 C Speed 3. 4 MHz 1 MHz N/A Write Delay 0 ms 50 ms Endurance (Write Cycles) 1014 106 105 Unlimited 3, 170 years 2 months Unlimited No Yes No 3 m. A/3 m. A 10 m. A/10 m. A 8 m. A/15 m. A 10 m. A/27 m. A 6 µA 3 µA 50 µA 115 µA Endurance (Solution Lifespan)1 Wear Leveling Active Read / Write Current 2 Sleep Current 2 1 Conditions: 2 Conditions: 001 -87700 Rev *C F-RAM writes at a 1 -ms interval; EEPROM/Flash writes at a 1 -minute interval Max current, SPI, 10 MHz – 40 MHz, 3 V, 85°C Owner: EWOO Tech lead: KEER Competitive Comparison: To define key features of the Cypress solution and demonstrate its superiority over the Next Best Alternatives (NBA’s). Must be credible and objective to the salesperson and customer. 8

F-RAM Smart E-Meter Solution Value Competitor EEPROM: (2 x) Atmel AT 25512 512 kb

F-RAM Smart E-Meter Solution Value Competitor EEPROM: (2 x) Atmel AT 25512 512 kb Price: $2. 821 BOM Integration Capacitor for 5 -ms Soak Time Page Writes BOM Integration Value 5 -ms Soak Time Page Writes: Nichicon URU 1 A 222 MHD 1 TO 2. 2 -m. F capacitor Price: $0. 391 Wear Leveling Firmware Development Total Additional Value Wear Leveling firmware development: New firmware development, testing and certification; 25 man-weeks @ $2, 000/man-week amortized over 500, 000 units Value Added: $0. 10 1 $2. 82 Competitor $0. 39 $0. 10 Total Value Delivered $3. 31 Target Cypress Solution: FM 25 CL 64 B-GTR Total Cost: $1. 761 47% Total Savings: $1. 55 Digikey website 1 ku pricing on 7/18/2014 001 -87700 Rev *C Owner: EWOO Tech lead: KEER EVC Slide: To clearly define the value of the Cypress solution, including BOM integration and unique functionality. 9

Here’s How to Get Started 1. Read our F-RAM Smart E-Meter Application Note (AN

Here’s How to Get Started 1. Read our F-RAM Smart E-Meter Application Note (AN 87352): www. cypress. com/AN 87352 2. Ask your distributor free samples of 64 Kb to 2 Mb F-RAM 3. Register to access online technical support: Cypress. com Smart E-Meter by GE (USA) 001 -87700 Rev *C Owner: EWOO Tech lead: KEER Call to Action: To tell customers how to start their design process. Smart E-Meter by Landis + Gyr 11

References and Links App Note (AN 87352) for F-RAM in Smart E-Meters: www. cypress.

References and Links App Note (AN 87352) for F-RAM in Smart E-Meters: www. cypress. com/AN 87352 Cypress Serial F-RAM Web Page: www. cypress. com/? id=4566 FM 25 CL 64 B-GTR Datasheet: www. cypress. com/? mpn=FM 25 CL 64 B-GTR App Note (AN 304) for F-RAM SPI Guide: www. cypress. com/? r. ID=82691 001 -87700 Rev *C Owner: EWOO Tech lead: KEER References and Links: Provide comprehensive view of resources to assist in learning about and adapting the solution. 13