Foundry Characteristics Ivan Peric Monolithic Detectors for Strip

Foundry Characteristics Ivan Peric, Monolithic Detectors for Strip Region 1

Foundry Characteristics • • • AMS H 35 Minimal gate length 350 nm Number of metals: 4 Supply voltage 3. 3 V Floating gate structure – isolated NMOS and PMOS within HV deep-n-well Standard substrate resistivity 20 Ω cm Higher resistivity on request possible Wafer size 8 inch Maximal reticle size: 22 cm x 26 cm Maximal chip size: chip + test structures fit into a circle of 3. 11 cm diameter (1. 9 cm x 2. 45 cm possible) TSV possible: pitch 260 µm ER cost: mask set: 74. 790 Euro (quote 2011) ER cost: Engineering run 8 inch Wafers (6 started, 2 guaranteed): 19. 800 Euro Ivan Peric, Monolithic Detectors for Strip Region 2

Foundry Characteristics • • • AMS H 18 (actually produced by IBM as CMHV 7 SF) Minimal gate length 180 nm Number of metals: 6 Supply voltage 1. 8 V Floating gate structure – isolated NMOS and PMOS within HV deep-n-well Standard substrate resistivity ~10 Ω cm Wafer size: 8 inch Maximal chip size: 18, 73 x 20, 77 – but diagonal size matters (so far biggest 20, 76 x 18, 73 with distance between reticles x = 100 um und y = 700 um for test structures) Run price: 32 Masks x 4. 500 €/Mask = 144. 000 € Engineering run (with 6 Wafers started and 2 Wafers guaranteed): 31. 350 € Ivan Peric, Monolithic Detectors for Strip Region 3

AMS H 35 Ivan Peric, Monolithic Detectors for Strip Region 4

Reticle in H 35 … 22 mm Teststrukturen=scribe line 26 mm Chip scribe Line (80µ) d Ivan Peric, Monolithic Detectors for Strip Region Multiple of 80µ Max. ∅ = 31112 µm 5

TSV – bask side RDL Face 2 Face Bumping of two Wafers (cross section) Bump M 4 Read out Chip CMOS Side 0. 13µ Readout Chip (Wafer 1) Thickness ~100µm M 3 M 1 H 35 -CMOS sensor (Wafer 2) Thickness ~215µm Transistor nwell Sensor Backside RDL VIAT_TSV Wire bond pad (PAD_TSV) RDL (MET 4_TSV) Wire bond Ivan Peric, Monolithic Detectors for Strip Region 6

TSV – 3 D detector Cross section Face 2 Back wafer bonding VIATTSV M 4=MTTSV M 3 M 1 Transistor Tier 2 (Readout part) Bond Oxide M 3 M 2 M 1 M 4 (METB) Transistor Tier 1 (Sensor part) Ivan Peric, Monolithic Detectors for Strip Region 7

Pixel detectors … Pixel sensor (diode based) (e. g. 8 x 2 cm) Readout chip Wire bond for sensor bias Wire bonds for RO chips CMOS pixel sensor several reticles (e. g. 4 x 2 cm) Capacitive signal transmission Wire bonds for RO chips Readout chip Wire bonds for PCB sensor chip CMOS pixel sensor Pixel sensor Readout chips Capacitive signal transmission Wire bonds for sensor chip CMOS pixel sensor several reticles (e. g. 4 x 2 cm) Readout chip Detector as it is done now: Diode based pixel sensor bump-bonded to readout ASICs Backside contact PCB Ivan Peric, Monolithic Detectors for Strip Region Present development: CMOS pixel sensor capacitively coupled to readout ASICs TSVs CMOS pixel sensor with backside contacts Readout chips PCB Wire bonds for RO chips PCB With TSVs CMOS pixel sensor with backside contacts capacitively coupled to readout ASICs 8

Pixel detectors with TSVs Capacitive signal transmission … CMOS pixel sensor several reticles (e. g. 4 x 2 cm) Readout chip Bumps or capacitive signal transmission TSVs Pixel sensor Readout chips Contacts for the readout chip are fed through the sensor substrate Sensor reticle 1 x 2 cm Readout chip 2 x 2 cm Sensor reticle 1 x 2 cm Sensor reticle 2 x 2 cm TSV Type A: sensor contacts on the back side Ivan Peric, Monolithic Detectors for Strip Region Reticle-reticle Connection (power) Type B: sensor - and readout chip contacts on the back side TSVs for sensor- and readout chip contacts 9

Strip detectors. . Readout ASIC 100’s of wire bonds with pitch 80 um Large strip sensor (10 x 10 cm) Readout electronics placed on chip periphery CMOS sensor 2 x 2 cm Flex PCB Detector as it is done now: Diode based strip sensor wire bonded to readout ASICs Ivan Peric, Monolithic Detectors for Strip Region Pixels on the bottom tier (signals are multiplexed to readout lines) Readout electronics placed on top tier Flex PCB Smaller number of wire bonds for IOs and power Present development: CMOS detector Smaller number of wire bonds for IOs and power Flex PCB TSVs (one per readout line) with a pitch of 80 um connect pixels and readout electronics With TSVs: Advanced 3 D detector with TSVs 10