Electron And Hole Equilibrium Concentrations 18 and 20
Electron And Hole Equilibrium Concentrations 18 and 20 February 2015 Ø Chapter 4 Topics-Two burning questions: • What is the density of states in the conduction and valence bands? • How do you find an exact position of the Fermi Level?
Concentration of Electrons at Equilibrium Thermal-equilibrium concentration of electrons (#/cm 3) in the conduction band Assume that EF is within the energy bandgap and So for energy levels in the conduction band there is (k. T ≈ 25. 9 me. V for T=300 K). So for energy levels in the conduction band Page 87 Text, Equation 3. 69 2
Also Refer To Appendix B
Concentration of Electrons at Equilibrium Define effective density of states in the conduction band 8 8
Concentration of Holes at Equilibrium Thermal-equilibrium concentration of holes (#/m 3) in the conduction band Assume that EF is within the energy bandgap and So for energy levels in the conduction band there is then for energy levels in the conduction band 10 10
Concentration of Holes at Equilibrium Define effective density of states in the valence band 11 11
Carrier Concentrations in Intrinsic Semiconductors For an intrinsic semiconductor, the concentration of electrons in the conduction band is equal to the concentration of holes in the valence band is the Fermi-level for the intrinsic semiconductor, i. e. , intrinsic Fermi-level For a given semiconductor, at constant temperature, ni is constant 14 14
The Intrinsic Fermi-Level position If 16
Fermi-Energy Levels In Extrinsic Semiconductors
Electron and Hole Concentrations in Extrinsic Semiconductor Summary For both undoped material and doped material under equilibrium condition 18
Position of Fermi Energy in Extrinsic Semiconductors Position of Fermi-level: 19
Variation of Fermi-Energy with Doping Concentration 20
Variation of Fermi-Energy with Temperature 21
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