EE 8407 Power Converter Systems Topic 2 Graduate

EE 8407 Power Converter Systems Topic 2 Graduate Course EE 8407 Bin Wu Ph. D, PEng Professor ELCE Department Ryerson University Contact Info Office: ENG 328 Tel: (416) 979 -5000 ext: 6484 Email: bwu@ee. ryerson. ca http: //www. ee. ryerson. ca/~bwu/ Ryerson Campus Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 1

EE 8407 Topic 2 High-Power Semiconductor Devices Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 2

EE 8407 High-Power Semiconductor Devices Topic 2 Lecture Topics • • • Power Diode SCR Thyristor Gate Turn-Off Thyristor (GTO) Integrated Gate Commutated Thyristor (GCT) Insulated Gate Bipolar Transistor (IGBT) Switch Series Operation Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 3

EE 8407 High-Power Semiconductor Devices Topic 2 • Device Rating Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 4

EE 8407 Power Diode Topic 2 4500 V/800 A press pack and 1700 V/1200 A module diodes Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 5

EE 8407 Power Diode Topic 2 • Heatsink Assembly Press pack device: • Double sided cooling • Low assembly cost and high power density • Preferred choice for high voltage high power applications Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 6

EE 8407 SCR Thyristor Topic 2 4500 V/800 A and 4500 V/1500 A SCRs Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 7

EE 8407 SCR Thyristor Topic 2 • Switching Characteristics Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 8

EE 8407 SCR Thyristor Topic 2 • Main Specifications 12000 V/1500 A SCR Thyristor Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 9

EE 8407 Gate Turn-Off (GTO) Thyristor Topic 2 4500 V/800 A and 4500 V/1500 A GTOs Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 10

EE 8407 Gate Turn-Off (GTO) Thyristor Topic 2 • Symmetrical versus Asymmetrical GTOs Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 11

EE 8407 Gate Turn-Off (GTO) Thyristor Topic 2 • Switching Characteristics Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 12

EE 8407 Gate Turn-Off (GTO) Thyristor Topic 2 • Main Specifications 4500 V/4000 A Asymmetrical GTO Thyristor Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 13

EE 8407 Topic 2 Integrated Gate Commutated Thyristor (GCT) 6500 V/1500 A Symmetrical GCT = Improved GTO + Integrated Gate + Anti-parallel Diode (optional) Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 14

EE 8407 Integrated Gate Commutated Thyristor Topic 2 • GCT Classifications Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 15

EE 8407 Integrated Gate Commutated Thyristor Topic 2 • Switching Characteristics Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 16

EE 8407 Integrated Gate Commutated Thyristor Topic 2 • Main Specifications 6000 V/6000 A Asymmetrical GCT Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 17

EE 8407 Topic 2 Insulated Gate Bipolar Transistor (IGBT) 1700 V/1200 A and 3300 V/1200 A IGBT modules Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 18

EE 8407 Topic 2 Insulated Gate Bipolar Transistor (IGBT) • IGBT Characteristics Static V-I Characteristics Switching characteristics Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 19

EE 8407 Topic 2 Insulated Gate Bipolar Transistor (IGBT) • Main Specifications 3300 V/1200 A IGBT Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 20

EE 8407 Device Series Operation Topic 2 • Cause of Voltage Imbalance Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 21

EE 8407 Device Series Operation Topic 2 • Equal Voltage Sharing • S 1, S 2, S 3: GTO, GCT or IGBT • Voltage Sharing: v 1 = v 2 = v 3 in steady state and transients • Static Voltage Sharing: Rv • Dynamic Voltage Sharing: Rs and Cs Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 22

EE 8407 Device Series Operation Topic 2 • Active Overvoltage Clamping (AOC) - Suitable for series IGBTs - Not applicable to GCTs • Assumption: S 1 is turned off earlier than S 2 • VCE 1 is clamed to Vm due to active clamping. Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 23

EE 8407 Summary Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 Topic 2 24

EE 8407 Topic 2 Textbook: Bin Wu, ‘High-Power Converters and AC Drives’, Wiley - IEEE Press, 2006 25