Dr Victor Veliadis CTO and Interim Deputy Director

Dr. Victor Veliadis CTO and Interim Deputy Director Power. America jvveliad@ncsu. edu

Power. America is a U. S Department of Energy WBG Semiconductor Manufacturing Institute • The U. S Department of Energy launched the Power. America Institute under the initiative of “National Network of Manufacturing Institutes (NNMI)” to commercialize Wide Band Gap (WBG) power devices. • Power. America is located in Raleigh NC and is managed by North Carolina State University. • Power. America is accelerating commercialization of wide bandgap semiconductor technologies by making them costcompetitive with silicon-based power electronics and reducing their perceived risk in industrial applications. • Through membership in the Power. America ecosystem, industry members grow their business by accelerated wide bandgap product introduction to market, and University members gain by engaging in collaborative projects with industry.

Power. America Supports TRL/MRL 4 -7 Projects to Stimulate High-tech Manufacturing TRL: Technology Readiness Level, MRL: Manufacturing Readiness Level

Power. America Strategy for Accelerated Large-scale Adoption of WBG Semiconductor Devices Mission US Manufacturing Jobs Creation and Energy Savings through Accelerated Large scale Adoption of WBG Semiconductor Devices in Power Electronics Systems Strategy • Highlight Performance Advantages of WBG Devices Stress high voltage at low resistance, and high temperature/frequency WBG device operational advantages over those of Si devices • Establish Reliability of WBG Devices Leverage Si Reliability best practices in developing WBG reliability standards • Demonstrate System Insertion Advantages of WBG Devices § Develop packaging technology that allows for full WBG performance potential § Establish WBG PE system smaller weight/volume and higher efficiency value proposition through low additional overall system cost and life of system energy savings • Reduce Cost of WBG Devices (TRL 4 -7) § Leverage mature Si fabrication practices and qualify WBG specific processes to enable multiple source high-yield volume manufacturing § Train Workforce in WBG devices/modules/systems (short courses, University programs) Benefits Job Creation, Accelerated Technology Innovation, Energy Savings, Smaller Environmental footprint

PA Provides Value to Members Through Acceleration of Their WBG Concept-to-Prototype Cycle • Device design to member’s specifications and applications, and cost-effective device manufacturing in high volume US fabs • • • Custom testing/reliability and module development • • • Short lead times expedite development of next generation offerings WBG ecosystem benefits such as roadmaps, industry perspectives, and networking opportunities • • Reliability and testing tailored to members application requirements Package and module solutions to member’s temperature/frequency/voltage ratings. Application specific circuit topology optimization for maximum efficiency Failure analysis to drive device/circuit/module/system optimization Insight into peripheral technologies (passives, voltage & current sensing, gate drives, etc. ) Timely access to Power. America device bank engineering samples • • Device design trade offs optimized to member’s application and reliability requirements Access to PA’s baseline MOSFET, JBS, and MOS-JBS fabrication recipes Fabrication processes tailored to optimize member’s device performance and reliability Manufacturing at 150 -mm WBG high-volume manufacturing centers Roadmaps, market direction, industry perspectives, problem solving, and gaining confidence in new technologies Networking opportunities and expansion of client base through PA interaction and events Ability to influence and gain from shared project undertakings within PA Education and Workforce development, including access to short courses, highly trained personnel, and wide bandgap experts • • • Workforce training (design, fab, test, reliability, packaging, module , circuit topology, system insertion) through university programs and short course offerings Highly WBG trained personnel (graduate students/post-docs) to strengthen member’s workforce Consulting by WBG experts Industry members grow their business by accelerated WBG product introduction to market University members benefit by collaborating with industry

PA is Strengthening WBG Power Electronics Programs at NCSU and Universities Across the US NCSU: 8 New Graduate Courses / 8 Existing Graduate Courses Augmented with WBG (Power. America Impact: Doubled our Capacity) Date First Offered Actual/Average Enrollment 1 EEE 531 Semiconductor Device Theory I Existing 24 2 ECE 5244 Advanced Power Conversion Techniques (WBG added) Existing 25 3 ECE 5204 Power Semiconductor Devices (WBG added) Existing 25 4 ECE 5274 Modeling and Control of Three-Phase PWM Converter Existing 25 5 ECE 5254 Power Converter Modeling and Control Existing 25 6 ECE 5264 Embedded Power Management Existing 25 7 ECE 5234 EMI and Noise Reduction Techniques and Filter Design Existing 25 8 ECE 4224 Power Electronics Existing 25 9 ECE 553 Spring 2016 Semiconductor Power Devices (WBG added) 2016 15 10 EEE 572 Advanced Power Electronics (WBG added) 2015 61 11 EEE 598 Renewable Electric Energy (WBG added) 2015 33 12 8 Online Video Modules on WBG – Short Courses or Supplementary Material 2015 50 13 ECE 792 -030 Wide Band Gap Semiconductor Power Devices (New Course) 2015 11 14 ECE 739 Integrated Circuits Technology and Fabrication Laboratory 2013 15 15 ECE 592 Power Electronics Design & Packaging 2012 10 16 ECE 732 Dynamics and Control of Electric Machines 2012 20

Strategic PA Funding Allocation Accelerates Commercialization of WBG Power Electronics Power electronics projects at Universities provide real world experience to the next generation of WBG Engineers: 44 undergrad, 38 grad, and 11 Post-doc full time trainees in BP 2

PA Member Wolfspeed has a Highly Efficient Vertically Integrated WBG Manufacturing Model • • $171 M revenue (FY 2016) 2240 patents worldwide • • 323, 000 sq. ft. of fabrication and office facilities Class 10, 100, and 1000 Clean Rooms

150 -mm X-FAB Open Si. C Foundry Exploits Existing Si Economy of Scale to Reduce Si. C Manufacturing Cost X-FAB/Power. America Manufacturing Vision: Open Si. C Foundry at the Economy Scale of Silicon • Wafer fabrication dominated by fixed O/H costs (Management, Quality, EHS, IT) • Economies of scale the greatest factor in reducing cost: Use the scale established in Si to accelerate Si. C X-FAB Si. C Users: ABB, Gene. Si. C, Monolith, USCi, Global Power, and NCSU X-FAB is open 150 -mm Si. C Foundry fully integrated within a high volume 150 -mm Si fab

Power. America has Established Baseline Processes for 1200 -V MOSFET and Diode Si. C Fabrication at XFAB Power. America process yielded 1. 2 k. V MOSFETs in its first run MOSFET Active area is 4. 5 mm 2 Specific on resistance: 5. 5 mΩ-cm 2 at 1 A, Vg=20 V BV 1400 V, Id@1200 V=1 u. A Power. America is developing 3. 3, 6. 5, and 10 k. V MOSFET and JBS Baseline Processes PA Processes developed by Prof. Baliga of NCSU and Prof. Sung of SUNY

Power. America has Established a Baseline Process for 1. 2 k. V Monolithically Integrated Si. C MOS-JBS Fabrication at XFAB The Power. America process yielded an integrated 1. 2 k. V MOSFET/JBS JBSFET Active area is 4. 5 mm 2 Specific on resistance: 12. 5 mΩ-cm 2 at 8 A, Vg=20 V JBSFET 3 rd Q Behavior Power. America is developing 3. 3, 6. 5, and 10 k. V Si. C MOS-JBS Baseline Processes PA Processes developed by Prof. Baliga of NCSU and Prof. Sung of SUNY

Si. C and Ga. N Technology Roadmaps Developed Through Expert Interviews and Literature Reviews • Interviewed numerous experts in the Si. C and Ga. N communities • Convened an in-person workshop on June 22, 2016 in Raleigh, North Carolina with +50 attendees • Held a second virtual workshop with Power. America working group members • Convened working group meetings to collect additional information and gather feedback on roadmap components • Reviewed more than 100 sources as part of a background literature review

Si. C Roadmap Identifies Markets & Applications at Each Voltage Node and Outlines Device Performance Requirements Roadmap tables cover 0. 65, 1. 2, 1. 7, 3. 3, 6. 5, 10, and 15 k. V devices

Ga. N Roadmap Identifies Markets & Applications at Each Voltage Node and Outlines Device Performance Requirements Roadmap tables cover devices in the 100 -1200 V range Budget Period Performance Targets Device Type Device Cost [$/A] Device Voltage Rating [V] Device Rated Current at 25/150 o. C [A] Power [k. W] Frequency Range [k. Hz] System Efficiency [%] Packaging Form 2016– 2018 2019– 2021 2022– 2024 2025– 2027 Lateral normally-off switch

The Power. America Ecosystem is a Catalyst for the Commercialization of Si. C and Ga. N PE In BP 3 Power. America will support: • • Cost-effective device manufacturing Module development Reliability and failure analysis Circuit applications Workforce training (short courses to be offered in 2017) Graduate Education Timely access to engineering samples through the device bank Roadmaps, market direction, industry perspectives, and networking opportunities