DMT 242 WAFER FABRICATION INTRODUCTION COURSE ASSESSMENTS Table

DMT 242 WAFER FABRICATION INTRODUCTION

COURSE ASSESSMENTS Table 1: CO – Course Outcomes Assessments Matrix Assessments Examinations (50%) Course Outcome, CO Level of Complexity Final Exam (50%) Continual Assessment (50%) Mid/End Term Exam (20%) Laboratory Assessments & TEST (20%) PBL / Assignments (10%) CO 1: Ability to solve the basics of semiconductor device and ability to explain the cleanroom and cleanroom protocols. CO 2: Ability to apply the semiconductor process technology and construct the fabrication processes for thermal and photolithography processes. . CO 3: Ability to apply and construct the fabrication processes in etching and metallization. Cognitive: C 3 Evaluation Q 1 – Q 6 MTE Lab 1 Assignment 1, Mini Project Cognitive: C 3 Evaluation Q 1 – Q 6 ETE Lab 2 Lab 3 Assignment 2, Mini Project Cognitive: C 3 Evaluatio Q 1 – Q 6 ETE Lab 4 Lab 5 Mini Project

Evolution of ICs 1960 1971 1954 FIRST First Single PLANAR Intel Micro Crystal INTEGRATED processor Silicon CIRCUIT (IC) 1874 (Braun) Metalsemiconduct or contact (detector) 1952 First Single Crystal Germanium 2000 ++ 1975 First PC 1958 (TI) First IC Device 1947 (Bell Lab) First Transistor

EVOLUTION OF IC INTEGRATION SCA

Transition of Transistor Vacuum tubes consist of three terminal devices called triodes The first point contact transistor made use of the semiconductor germanium. Individual electronic components were soldered on to printed circuit boards. Integrated circuits placed all components in one chip, drastically reducing the size of the circuit and its components.

Siti S. Mat Isa, EMT 272 Sem 2014/15

MOORE’S LAW "The number of transistors incorporated in a chip will approximately double every 24 months. " Gordon Moore, INTEL co-founder

Semiconductor Devices Basic Devices Building Blocks * A semiconductor is a material which has electrical conductivity between that of a conductor such as copper and that of an insulator such as glass.

Metal Oxide Semiconductor MOS TECHNOLOGY • Good for digital electronics NMOS TECHNOLOGY (1970 s) • Ion implantation replaced diffusion • NMOS replaced PMOS (more faster) CMOS Complementary MOS CMOS TECHNOLOGY (1980 s onwards) • MOSFET IC surpassed bipolar • LCD replaced LED • CMOS replaced NMOS • Still dominates IC market • Low power consumption • High temperature stability • High noise immunity

What is Transistor and how it works? Fa br ica ti on Pro ce ss

IC FABRICATION PROCESS

FROM SAND TO SILICON

Fabrication & Manufacturing Process Design Mask Wafer Fabrication Front End Processes Deposition: -Oxidation -Diffusion -Photolithogra phy -Etch (wet/dry) -Implantation Test Back End Processes Packaging Parametric & Functional Deposition (oxide/nitride): -Metallization -Rapid Thermal Process -Lithography -Etch (wet/dry) Final Test Failure Analysis & Reliability

BASIC OF IC FABRICATION PROCESS § Basic of fabrication process : § Lithography : § The process for pattern definition by applying thin uniform layer of viscous liquid (photoresist) on the wafer surface. The photo-resist is hardened by baking and than selectively removed by projection of light through a reticle containing mask information. § Etching : § Selectively removing unwanted material from the surface of the wafer. The pattern of the photo-resist is transferred to the wafer by means of etching agents. § Deposition : § Films of the various materials are applied on the wafer. For this purpose mostly two kind of processes are used, physical vapor deposition (PVD) and chemical vapor deposition (CVD).

BASIC OF IC FABRICATION PROCESS § Chemical Mechanical Polishing : § is a process of smoothing surfaces with the combination of chemical and mechanical forces. § It can be thought of as a hybrid of chemical etching and free abrasive polishing. § Oxidation : § In the oxidation process oxygen (dry oxidation) or H 2 O (wet oxidation) molecules convert silicon layers on top of the wafer to silicon dioxide. § Ion Implantation : § Most widely used technique to introduce dopant impurities into semiconductor. The ionized particles are accelerated through an electrical field and targeted at the semiconductor wafer. § Diffusion : § A diffusion step following ion implantation is used to anneal bombardment-induced lattice defects.

FABRICATION TECHNOLOGY § Assembly process / IC Packaging process : Video

PRODUCTS § Example of electronic products.

Sand to Final Product Process On PCB Motherboard Packaged IC Wire bonding