DMT 234 Introduction to Semiconductor Physics Devices Lecture
- Slides: 20
DMT 234 Introduction to Semiconductor Physics & Devices Lecture 1 Introduction
DMT 234 Semiconductor Physic & Device THE EVOLUTION OF IC 1. 1874 : Metal – semiconductor contact by Braun ü shows the electrical conduction between semiconductor and metal ü Application : detector 1. 1947 – First transistor, AT & T Bell Labs 2. 1952 – First Single Crystal Germanium ü amplify and switch electronic signals and power 3. 1954 – First Single Crystal Silicon 3. 1952 – First Single Crystal Germanium 4. 1954 – First Single Crystal Silicon 4. 1958 – First IC Device, TI 5. 1961 – First IC product, Fairchild Camera 6. 1961 – First IC product, Fairchild Camera
DMT 234 Semiconductor Physic & Device TRANSISTOR AND ITS INVENTORS (1947) 1. 1947 – First transistor, AT & T Bell Labs 2. 1952 – First Single Crystal Germanium 3. 1954 – First Single Crystal Silicon 4. 1958 – First IC Device, TI 5. 1961 – First IC product, Fairchild Camera
TRANSISTOR TRANSITION Vacuum tubes consist of three terminal devices called triodes The first point contact transistormade use of the semiconductor germanium. Individual electronic components were soldered on to printed circuit boards. Integrated circuits placed all components in one chip, drastically reducing the size of the circuit and its components.
TRANSISTOR TRANSITION
DMT 234 Semiconductor Physic & Device MOORE’S LAW • Founder : Gardon Moore's law : rule of thumb in the history of computing hardware the number of transistors that can be placed on an integrated circuit DOUBLES approximately every two years
DMT 234 Semiconductor Physic & Device MOORE’S LAW As of 2012, the highest transistor count in a commercially available CPU is over 2. 5 billion transistors, in Intel's 10 - core Xeon Westmere-EX The silicon engine….
DMT 234 Semiconductor Physic & Device IC INTEGRATION SCALE Integration level Abbreviation No of devices on a chip Small scale Integration SSI 2 to 50 Medium scale integration MSI 50 to 5 k Large scale integration LSI 5 k to 100 k Very large scale integration VLSI 100 k to 10 M Ultra large scale integration ULSI 10 M to 1 G Super large scale integration Over 1 G SLSI
FROM SAND TO SILICON
DMT 234 Semiconductor Physic & Device Introduction to Fabrication Technology & Manufacturing
DMT 234 Semiconductor Physic & Device Introduction to Fabrication Technology & Manufacturing
Introduction to Fabrication Technology & Manufacturing
DMT 234 Semiconductor Physic & Device Introduction to Fabrication Technology & Manufacturing
DMT 234 Semiconductor Physic & Device Introduction to Fabrication Technology & Manufacturing
DMT 234 Semiconductor Physic & Device Introduction to Fabrication Technology & Manufacturing
DMT 234 Semiconductor Physic & Device Introduction to Fabrication Technology & Manufacturing
DMT 234 Semiconductor Physic & Device Introduction to Fabrication Technology & Manufacturing
DMT 234 Semiconductor Physic & Device Introduction to Fabrication Technology & Manufacturing
DMT 234 Semiconductor Physic & Device Introduction to Fabrication Technology & Manufacturing
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