Digital LG MMIC WORKSHOP MMICs for mmwave Application






























- Slides: 30
Digital LG 이동통신 MMIC 및 모듈 WORKSHOP MMIC’s for mm-wave Application LG 정밀 ㈜ 연구소 김정필 LG정밀
Digital LG 주파수에 따른 무선통신 사업의 발전 방향 Imaging Sys. 90 GHz FSS 29 GHz WLL 2. 4 GHz PCS 2. 0 GHz IMT 2000 2. 3 GHz CT-2 800 MHz 1 GHz 2 GHz CATV 28 GHz BWLL 24 GHz Car Radar 24 GHz 20 GHz Car Radar 94 GHz BWLL 66 GHz Car Radar 77 GHz 차량간 통신 60 GHz Car Radar 60 GHz 70 GHz 90 GHz LG정밀
Digital LG 차량 충돌 방지 레이다 (시스템 블럭도) 송수신부 신호 처리부 Rx Ant. LNA Ant. Driver Mixer LPF Switch FPGA LPF Tx Ant. A/D Directional Coupler DSP D/A VCO LG정밀
부품 MMIC 개발 추진 Digital LG n MMIC 추진 부품 ▶ Directional Coupler ▶ Mixer (Ga. As p. HEMT Single Ended Mixer) ▶ Switch (Single Pole Triple Throw) n 개발 협력 업체 ▶ 서울대 : Switch 설계, LG 종기원 제작 ▶ LG 종기원 : Coupler, Mixer 설계 및 제작 LG정밀
Digital LG MMIC 특성 측정 결과 (Switch) SP 3 T Switch n Transistor : 2 um × 40 um Ga. As p. HEMT n Size : 1. 8 mm × 1. 8 mm OUT 1 IN OUT 2 OUT 3 LG정밀
MMIC 특성 측정 결과 (Switch) Digital LG n Insertion Loss : 약 10 d. B n Isolation : 약 20 d. B LG정밀
Digital LG MMIC 특성 측정 결과 (Directional Coupler) Back Metal P 1 (FROM VCO) P 2 (TO TX Ant) P 3 (TO RX LO) Front Metal LG정밀
Digital LG 무선통신 시스템 개요 2 nd/2. 5 th Gen. PCS Cellular 00 Outdoor WATM (MBS) 20 T- Walking Speed 4 th Gen. IM High Speed 3 rd Gen. Indoor Still B-WLL Cordless Still Fixed Data rate (Mbps) Radio LAN Fixed Terminal Cable 0. 01 0. 1 1 10 100 LG정밀
LMDS용 28 GHz HPA MMIC (TRW社) Digital LG (1) Photograph of 28 GHz Power Amplifier n Transitor : In. Ga. AS/Al. Ga. As/Ga. As p. HEMT 0. 15 um × 320 um, 0. 15 um × 480 um n Substrate : 4 mil Ga. As n Model : Curtice nonlinear model n 2 -Stage LG정밀
LMDS용 28 GHz HPA MMIC (TRW社) Digital LG (2) Power Amplifier의 성능 n Output Power : 33 d. Bm @ 27. 5 GHz n Power Added Efficiency : 37. 2 % @ 27. 5 GHz n Small Signal Gain : 19 d. B @ 27. 5 GHz LG정밀
LMDS용 28 GHz HPA MMIC (TRW社) Digital LG (3) 주파수에 따른 최대 출력 전력 및 효율 n 주파수 밴드 : 26. 5 ∼ 29. 5 GHz n Output Power : 33 d. Bm @ Input power = 21 d. Bm n Power Added Efficiency : 30 ∼ 35 % LG정밀
Ga. In. P/Ga. As HBT LNA (Queen Univ. , Nortel社) Digital LG (1) Layout of LNA n Transistor : 2 um × 2 um Ga. In. P/Ga. As HBT n Substrate Thickness : 4 mil n 4 Stage LG정밀
Ga. In. P/Ga. As HBT LNA (Queen Univ. , Nortel社) Digital LG (2) 성능 측정 n 주파수 : 26. 5 ∼ 30 GHz n Gain : 15 d. B 이상 n Noise Figure : 5 d. B LG정밀
Balanced Upconverter Mixer (Queen Univ. , Nortel社) Digital LG (1) Layout of Balanced Mixer n 3 um × 6. 5 um Ga. In. P/Ga. As HBT n Substrate Thickness : 4 mil n Differential Pair of Gilbert Cell Mixer (Double Balanced Mixer) LG정밀
Balanced Upconverter Mixer (Queen Univ. , Nortel社) Digital LG (2) Conversion Gain n 주파수 대역 : 27 ∼ 30 GHz n Conversion Gain : 약 1 d. B LG정밀
Digital LG MMIC 특성 측정 결과 (Mixer) Single Ended Ga. As p. HEMT Mixer n f. R = 76. 6955 GHz n f. L = 76. 6690 GHz n f. IF = 3. 5 MHz n PRF = -15. 0 d. Bm n Vgs = -0. 2 V n Transistor : 4 um × 20 um Ga. As p. HEMT n Substrate Thickness : 4 mil n Chip Size : 1. 2 mm × 1 mm G Bias RF Conversion Gain [d. B] -10 LO -15 RF -20 LO IF IF -25 -10 -5 0 5 10 LO Power [d. Bm] LG정밀