Development of ATLAS Liquid Argon Calorimeter Frontend Electronics

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Development of ATLAS Liquid Argon Calorimeter Front‐end Electronics for the HL‐LHC Andy Tiankuan Liu

Development of ATLAS Liquid Argon Calorimeter Front‐end Electronics for the HL‐LHC Andy Tiankuan Liu on behalf of the ATLAS Liquid Argon Group

Outline 1. Introduction 2. Analog front‐end – 65 nm – 130 nm – Si.

Outline 1. Introduction 2. Analog front‐end – 65 nm – 130 nm – Si. Ge 3. ADCs 4. Optical links – Laser driver array ASICs – Optical transmitter array module 5. Summary Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 2

ATLAS LAr Detector and Phase-II Upgrade LAr Detector @ 87 K not change except

ATLAS LAr Detector and Phase-II Upgrade LAr Detector @ 87 K not change except potential upgrade of FCal Preamp + shaper Functionally the Same as the current detector New Approach Trigger-less readout Digitize and ship all digital data The back end will also be replaced to readout the new front‐end Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 3

Upgrade Objectives Detector capacitance 0. 2 to 1. 5 n. F Signal dynamic range

Upgrade Objectives Detector capacitance 0. 2 to 1. 5 n. F Signal dynamic range ~ 16 bits Noise requirements ~ 100 n. A Selectable input impedance 25 or 50 Ω for cable termination Moderate radiation tolerance requirements ~300 krad, 1013 cm‐ 2 1‐Me. V eq. neutrons • Digitize all 128 channels/FEB @ 14 bits, 40 or 80 MS/s with 2 gain scales. • Ship data from all channels off detector (trigger‐less readout). • Keep the power dissipation to the current one or lower. • • • Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 4

Options Being Explored 1. Multiple-ASIC solution – Preamplifier + shaper – ADC – Encoder

Options Being Explored 1. Multiple-ASIC solution – Preamplifier + shaper – ADC – Encoder + serializer – Laser drivers and optical transmitters 2. Front-End System-On-Chip (FESOC) solution – Preamplifier + shaper + ADC + serializer – Laser drivers and optical transmitters Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 5

Outline 1. Introduction 2. Analog front‐end – 65 nm – 130 nm – Si.

Outline 1. Introduction 2. Analog front‐end – 65 nm – 130 nm – Si. Ge 3. ADCs 4. Optical links – Laser driver array ASICs – Optical transmitter array module 5. Summary Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 6

Front‐End System On Chip • FESOC (front‐end system on a chip): proposed • HLC

Front‐End System On Chip • FESOC (front‐end system on a chip): proposed • HLC 1: 8‐ch analog FE ASIC – Dual range – Programmable gain – Programmable termination – Programmable filter • To be integrated with ADCs and mux/encoder/serializers • Power dissipation ~1. 2 W • CMOS 65 nm Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 7

Preamp in 65 nm ‐ Design • New concept • Fully differential amplifier •

Preamp in 65 nm ‐ Design • New concept • Fully differential amplifier • Very stable termination (R and N independent of signal current) Noiseless capacitive feedback setting the gain Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 8

Preamp in 65 nm ‐ Performance • Equivalent noise at the input ENI ~57

Preamp in 65 nm ‐ Performance • Equivalent noise at the input ENI ~57 n. A rms at 260 p. F, 40 ns • Nonlinearity now within 0. 1% at 9 m. A, within 0. 5% at 10 m. A • Power dissipation ~100 m. W/channel from single 1. 2 V supply • The layout design is being finalized, and the test chip submission is imminent. 57 n. A 40 ns Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 Peaking time setting 9

Analog FE in 130 nm - Design Line termination Noise Tiankuan Liu, TWEPP, Karlsruhe,

Analog FE in 130 nm - Design Line termination Noise Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 10

Input impedance ( ) Analog FE in 130 nm - Performance Integral nonlinearity with

Input impedance ( ) Analog FE in 130 nm - Performance Integral nonlinearity with CR ‐RC 2 (40 ns peaking time) High gain (0 -1 -m. A) � 0. 2% 25. 5Ω @1 MHz 10 k. Hz 1 MHz 100 MHz High gain (1 -10 m. A) 0. 2% Frequency (Hz) Impedance flat from 10 k. Hz to 100 MHz < 1 variation versus current due to Super Common base Zin variation Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 Noise dominated by R 0 and NMOS: 150 n. A with 1. 5 n. F 11

FE analog in 130 nm ‐ Prototype LAUROC : 8 Channel prototype • Super

FE analog in 130 nm ‐ Prototype LAUROC : 8 Channel prototype • Super Common Base type Preamp • Programmable Zin: 25 or 50Ω • 2 Gain Ranges: 2 or 10 m. A • Input Noise eq. < 10Ω • High current Saturation mitigation • Preamp Power 7 m. A @ 2. 5 V ~ 18 m. W • Submitted April 2016 Compare 130 nm and 65 nm: • Test boards/benches similar • Comparative measurements of 65/130 nm chips Goal - Converge Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 12

FE Analog in Si. Ge (180 nm) • • • Similar to the current

FE Analog in Si. Ge (180 nm) • • • Similar to the current design which is implemented with discrete components Bonding option for 25/50 . No impedance/dynamic range tuning Might be marginal at High frequency (> 30 MHz) and large current Good noise performance on simulation : 25 preamp : 86 m. W, 97 n. A for 1. 0 n. F with CR‐RC 2 shaping Layout exists. Submission is under discussion Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 13

Outline 1. Introduction 2. Analog front‐end – 65 nm – 130 nm – Si.

Outline 1. Introduction 2. Analog front‐end – 65 nm – 130 nm – Si. Ge 3. ADCs 4. Optical links – Laser driver array ASICs – Optical transmitter array module 5. Summary Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 14

ADC in ‐ Specs • • High resolution: 14 bits High speed: 40 -80

ADC in ‐ Specs • • High resolution: 14 bits High speed: 40 -80 MS/s Low power, small area Radiation‐tolerant Phase-II Upgrade FEB (On detector) Detector Output Signal Preamp Analog Shaper … … ADC 16 -bit DR Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 ? 15 … MUX & Serializer To Back-end Optical Links 10 Gbps 15

Chip Architecture • The work is still “in‐progress” and the chip FEB 2 context

Chip Architecture • The work is still “in‐progress” and the chip FEB 2 context study started • 65 nm CMOS • 8‐channel 14‐ bit ADCs at 40 MS/s • QFN package preferred (100 pins, 0. 5 mm pitch, 12 mm x 12 mm Power cut Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 16

Possible Layout Power cuts Digital side Analog side References ADC channels. Silicon space 0.

Possible Layout Power cuts Digital side Analog side References ADC channels. Silicon space 0. 2 mm x 1 mm per channel Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 • Chip produces data volume of 5. 12 Gbit/s • Die size 1. 98 x 1. 95 mm • 136 die I/O pads 17

Outline 1. Introduction 2. Analog front‐end – 65 nm – 130 nm – Si.

Outline 1. Introduction 2. Analog front‐end – 65 nm – 130 nm – Si. Ge 3. ADCs 4. Optical links – Laser driver array ASICs – Optical transmitter array module 5. Summary Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 18

Optical Links: Overview • The optical link part will take advantage of lp. GBT

Optical Links: Overview • The optical link part will take advantage of lp. GBT and Versatile Link +, together aiming at the development of rad‐tol optical links. • The major parts (Mux, encoder and serializer) of lp. GBT (65‐nm CMOS technology) will be integrated with the analog front‐end and ADCs. • Laser array driver ASICs and optical transmitter modules are designed for Versatile Link +. Mux+ ENC +SER Related talks: • Paulo Moreira, Radiation hard High‐Speed Optical Links for HEP, 9: 00‐ 9: 45, Thursday. • Csaba Soos, Versatile Link PLUS Transceiver Development, 11: 10 AM, Thursday. Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 19

Laser Driver Array: Design and Layout Related Talk: Di Guo, Developments of two 4

Laser Driver Array: Design and Layout Related Talk: Di Guo, Developments of two 4 × 10‐Gbps radiation‐tolerant VCSEL array drivers in 65 nm CMOS, 3: 40 PM, Wednesday. 1. 7 mm Poster: Zhiyao Zeng, LDQ 10 P: A Compact Low‐Power 4 x 10 Gb/s VCSEL Driver Array IC, today. VLAD output driver Two‐stage pre‐driver 1. 9 mm Pitch 0. 25 mm VLAD (VCSEL Array Driver) and lp. VLAD (low‐power VCSEL Array Driver) are 4‐channel, 10‐Gbps‐ per‐channel VCSEL array driver ASICs designed in a 65‐nm CMOS technology with different output structures. lp. VLAD output driver Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 20

Laser Driver Array: Optical multi‐channel test Results • Total jitter 35 ps • Total

Laser Driver Array: Optical multi‐channel test Results • Total jitter 35 ps • Total jitter = 48 ps • Total power consumption 33. 9 m. W/ch • Total power consumption 21. 6 m. W/ch. This is a world record now. lp. VLAD 100 ps 845 W 100 ps 975 W • Signal source: Agilent J‐BERT N 4903 B (12. 5 • 10 Gbps optical eye with adjacent channel Gb/s) working simultaneously • Oscilloscope: Agilent DSA 91204 A (12 GHz) • Input: diff, swing 200 m. V, PRBS 27‐ 1 with optical receiver Agilent 81495 • Tested rad‐tol above to 300 Mrad. Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 21

Laser Driver Array: Module Development • • • ATx (Array optical Transmitter) is a

Laser Driver Array: Module Development • • • ATx (Array optical Transmitter) is a 12‐channel, 10 Gbps‐per‐channel optical transmitter module developed, based on the MOI and Prizm from US Connec and the AZ 8 connector from Samtec with custom active‐alignment method for the module assembly. ATx is used as a test vehicle for VLAD/lp. VLAD. MOI and prizm tested rad‐tol up to 96 Mrad. Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 22

Summary • The ATLAS LAr front‐end readout electronics without trigger is under development to

Summary • The ATLAS LAr front‐end readout electronics without trigger is under development to meet the high luminosity requirements. • An approach of System‐On‐Chip is being targeted: integrating all front‐end functional blocks (preamplifiers/shapers/ADCs/mux/encoders/serializers). • Three analog front‐end ASICs in early development stages show promising performances within termination, capacitance range, input signal dynamic range and power requirements. • New ADC design has been started. • Two radiation‐tolerant laser driver array ASICs and an optical transmitter modules are prototyped and tested. Tiankuan Liu, TWEPP, Karlsruhe, Germany, September 27, 2016 23