Department of Computer Engineering Prince of Songkla University

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Lecture 6 Complex NMOS 240 -451 VLSI, 1

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut In the Past VDD A C C B B Y Y A B C 240 -451 VLSI, A B C 2

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Memory NMOS 240 -451 VLSI, 3

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Dynamic RAM. 1 Dynamic RAM using 6 NMOS High bit rate 1 word sequential 1 B A 240 -451 VLSI, 4

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Dynamic RAM. 2 Dynamic RAM using 4 NMOS Row select 240 -451 VLSI, 5

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Dynamic RAM using 4 NMOS B 1 - bit line 240 -451 VLSI, B 2 - bit line 6

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Read Dynamic RAM using 4 NMOS Activate word line I I=0 off 240 -451 VLSI, on 7

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Write “ 0” in Dynamic RAM using 4 NMOS 1 0 OFF ON Cg 2 Release Q until not have I at T 2, then Cg 1 charge Q until T 1 ON Flip/Flop 240 -451 VLSI, 8

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Dynamic RAM using 3 NMOS Read/write start at f 2 = 1 1 240 -451 VLSI, 9

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Write “ 1” in Dynamic RAM using 3 NMOS write and f 2 = 1 0 off Y=1 240 -451 VLSI, 10

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Write “ 0” in Dynamic RAM using 3 NMOS write and f 2 = 0 1 Off 240 -451 VLSI, No changing 11

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Read Dynamic RAM using 3 NMOS write and f 2 = 0 / read and f 2 = 1 OFF ON Off when Y = 0 If Y = 1 bit line = 0 if Y= 0 bit line = 1 240 -451 VLSI, 12

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Dynamic RAM using 1 NMOS 240 -451 VLSI, 13

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Write into Dynamic RAM using 1 NMOS 1 Write ‘ 1’ with charge Cs Value which want to write ’ 0‘or ‘ 1’ 240 -451 VLSI, Write ‘ 0’ with nocharge Cs 14

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Read Dynamic RAM using 1 NMOS 0 discharge Q ’ 0‘or ‘ 1’ detect with sense amplifier 240 -451 VLSI, 15

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Static RAM 240 -451 VLSI, 16

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut ROM • PROM (mask programmable rom( • EPROM (erasable programmable rom( • EEPROM (electrically erasable programmable rom( 240 -451 VLSI, 17

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Memory Structure in VLSI 240 -451 VLSI, 18

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut ROM circuit, 4 x 4 bit NOR based ROM Array 240 -451 VLSI, 19

Department of Computer Engineering, Prince of Songkla University 240 -451 VLSI, by Wannarat Suntiamorntut 20

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut 4 x 4 bit NAND based ROM Array 240 -451 VLSI, 21

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Shift Register • temporary memory using in Data path Half register 240 -451 VLSI, Half register 22

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Half Register Half register 240 -451 VLSI, 23

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut Data Path 240 -451 VLSI, input Combination 24

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut PLA (Programmable logic arrays( • Built by R. Preobsting NOR-NOR Structure (Product of Sum( 240 -451 VLSI, 25

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut PLA (Programmable logic arrays( Change to be NOR logic before program 240 -451 VLSI, 26

Department of Computer Engineering, Prince of Songkla University by Wannarat Suntiamorntut How to program PLA 240 -451 VLSI, 27