(Color online) (a) Schematics of the catalyst system and SEM images of the surface after growth for 1 min (a, d, g, j) for Fe/Si. O<sub>2(<i>x</i>)</sub>/Si substrates, where <i>x</i> = native, 200, 500, and 2000 nm, respectively. (b)(i) Schematic illustrating the salient stages of the CVD process. (ii) Schematic of the growth model for h-BN CVD on Fe/Si. O<sub>2</sub>/Si substrates. (iii) Detail of the Ferich corner of the Fe-B-N ternary phase diagram in the isothermal section at 950 ℃ <sup>[<span class="xref"><a href="#b 55" ref-type="bibr">55</a></span>]</sup>. (c) (i)SEM images of h-BN grains grown on Cu foil for 10 min at 1050 ℃. (ii) to (iv) are SEM images of h-BN grains grown for 60 min on Cu-Ni alloy foils with (ii) 10 atom %, (iii) 20 atom % and (iv) 30 atom % Ni at 1050 ℃. The scale bars are 20 <i>μ</i>m <sup>[<span class="xref"><a href="#b 56" ref-type="bibr">56</a></span>]</sup>. Huihui Yang, Feng Gao, Mingjin Dai, Dechang Jia, Yu Zhou, Ping'an Hu Recent advances in preparation, properties and device applications of two-dimensional h-BN and its vertical heterostructures Journal of Semiconductors, 2017, 38(3) http: //dx. doi. org/10. 1088/1674 -4926/38/3/031004