CMOS Active Pixel Sensor Development for Solar Orbiter

CMOS Active Pixel Sensor Development for Solar Orbiter Nick Waltham Space Science and Technology Department and Mark Prydderch Instrumentation Department Rutherford Appleton Laboratory RAL S&T Rolling Grant CMOS Active Pixel Sensor Development Nov 2004

Requirements Spectrometer / Imager for ESA’s Solar Orbiter Mission Requirements Ø Large format sensors: 2 k x 2 k pixels. Ø Small pixel size: 10 m. Ø Science-grade dynamic range, noise, linearity, etc. Ø EUV sensitivity. Ø Radiation hard. Ø Low power. RAL S&T Rolling Grant CMOS Active Pixel Sensor Development Nov 2004

Science-grade CMOS APS development at RAL 4 k x 3 k Pixel Sensor Development for ESA’s Solar Orbiter Ø 5 m pixel size. Ø 12 bit dynamic range. Ø 4 -transistor CDS pixel for low noise. Ø 0. 25 m CMOS process. Ø EUV sensitivity by back-thinning or front-etch. Pixel Circuit CAD Simulation Architecture 4 kx 3 k pixel sensor die CAD Layout 8 -inch Wafer 0. 25 m CMOS Sensor mounted on an invar block and wire-bonded to a PCB RAL S&T Rolling Grant Bond-wire protectioncover fitted CMOS Active Pixel Sensor Development Nov 2004

Science-grade CMOS APS development at RAL Progress to date. . . Modified Batch 1 wafers Ø Early test image from modified Batch 1 wafers. Ø Sufficient progress to proceed with the new Batch 2 wafers. Next Steps. . . Ø Early test image 4 kx 3 k pixels with JPEG compression for display purposes RAL S&T Rolling Grant CMOS Active Pixel Sensor Development Characterisation of Batch 1 and Batch 2 samples for: Ø Ø Ø Ø Readout noise Dynamic range Linearity Leakage current Pixel uniformity Radiation tolerance, etc. Back-thinning (e 2 v) New Test-Structures Nov 2004