Cleavededge overgrowth CEO with MBE 110 001 Ga

へき開再成長法 Cleaved-edge overgrowth (CEO) with MBE [110] [001] Ga. As substrate (001) MBE Growth 600 o. C In situ Cleave (110) MBE Growth 490 o. C L. N. Pfeiffer et al. , APL 56, 1679 (1990).

成長中断アニール法による表面平坦化 High Quality T-wire 表面AFM像 o 490 C Growth 600 o. C Anneal (110) arm well Atomically flat interfaces (001) stem well M. Yoshita et al. , JJAP 40, L 252 (2001).

エネルギー分解発光像 2~3 ML-high islands n n+2 1 ML-deep pits n n+1 励起子拡散長 ＞ 1 mm !!

単一Ｔ型量子細線レーザー Probability of Photon Cavity length　500 mm G=4. 6 x 10 -4 Probability of Electron Hayamizu et al. , APL 81, 4937 (2002).

空間分解顕微PLスペクトル T-wire stem well scan T=5 K Continuous PL peak over 20 mm PL width < 1. 3 me. V

発光励起スペクトル（PLE） E-field // to wire _I to wire // to arm well Stokesシフト　< 0. 3 me. V バンド端吸収に 1 D状態密度の 1/√E発散は見られない。 H. Akiyama et al. , APL 82, 379 (2003). H. Itoh et al. , APL 83, 2043 (2003).

単一量子細線の透過スペクトル（５Ｋ） Fabry-Perot fringes 顕微透過測定 Coupling efficiency = 20% Y. Takahashi et al. APL 86, 243101 (2005).

500 mm gold-coated cavity 単一量子細線のレーザー発振 Threshold 5 m. W Y. Hayamizu et al. , APL 81, 4937 (2002).

量子細線発光の励起 強度依存性 Density n 1 D = 1. 2 x 106 cm-1 a. B ~13 nm (rs = 0. 65 a. B) Electron-hole plasma n 1 D = 1. 2 x 105 cm-1 (rs = 6. 6 a. B) Biexciton+Exciton EB =2. 8 me. V n 1 D = 3. 6 x 103 cm-1 (rs = 220 a. B) Exciton n 1 D ~ 102 cm-1 M. Yoshita, et al. 　cond-mat/0402526

吸収・利得スペクトル（強励起） Excitation Light ：cw Ti. S laser at 1. 631 e. V Gain EBE EFE Absorption Cassidy’s Method Spectrometer with spectral resolution of 0. 15 me. V Spontaneous emission Stripe shape Waveguide Emission 8. 3 m. W Polarization parallel to Arm well D. T. Cassidy JAP 56, 3096 (1984).