Chapter 5 Interconnect RLC Model n Efficient capacitance

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Chapter 5 Interconnect RLC Model n Efficient capacitance model üEfficient inductance model üRC and

Chapter 5 Interconnect RLC Model n Efficient capacitance model üEfficient inductance model üRC and RLC circuit model generation n Numeric based interconnect modeling

Is RC Model still Sufficient? n Interconnect impedance is more than resistance u Z

Is RC Model still Sufficient? n Interconnect impedance is more than resistance u Z R +j L u n 1/tr On-chip inductance should be considered u When L becomes comparable to R as we move towards Ghz+ designs

Candidates for On-Chip Inductance n Wide clock trees u Skews are different under RLC

Candidates for On-Chip Inductance n Wide clock trees u Skews are different under RLC and RC models u Neighboring signals are disturbed due to large clock di/dt noise n Fast edge rate (~100 ps) buses u RC model under-estimates crosstalk n P/G grids (and C 4 bumps) u di/dt noise might overweight IR drop

Resistance vs Inductance Length = 2000, Width = 0. 8 Thickness = 2. 0,

Resistance vs Inductance Length = 2000, Width = 0. 8 Thickness = 2. 0, Space = 0. 8 R and L for a single wire Ls and Lx for two parallel wires

60 00 u Impact of Inductance 5 u Gnd RC model 10 u Clk

60 00 u Impact of Inductance 5 u Gnd RC model 10 u Clk 5 u Gnd RLC model

Inductance Extraction from Geometries q Numerical method based on Maxwell’s equations u q Accurate,

Inductance Extraction from Geometries q Numerical method based on Maxwell’s equations u q Accurate, but way too slow for iterative physical design and verification Efficient yet accurate models u Coplanar bus structure [He-Chang-Shen-et al, CICC’ 99] u Strip-lines and micro-strip bus lines [Chang-Shen-He-et al, DATE’ 2 K] u Used in HP for state-of-the-art CPU design

Definition of Loop Inductance Ii Vi n The loop inductance is Ij Vj

Definition of Loop Inductance Ii Vi n The loop inductance is Ij Vj

Loop Inductance for N Traces Tw T w. L t. L n Ts. L

Loop Inductance for N Traces Tw T w. L t. L n Ts. L t 1 Ts Tw t 2 T w. R Tw Ts t 3 Ts. R t. R 1. 73 1. 15 0. 53 1. 15 1. 94 1. 24 0. 53 1. 24 1. 92 Assume edge traces are AC-grounded u leads to 3 x 3 loop inductance matrix n Inductance has a long range effect u non-negligible coupling between t 1 and t 3, even with t 2 between them It is not sufficient to consider only a single net, as did by most interconnect modeling and optimization works

Table in Brute-Force Way is Expensive Tw T w. L t. L n t

Table in Brute-Force Way is Expensive Tw T w. L t. L n t 2 Ts t 3 Ts. R t. R 1. 73 1. 15 0. 53 1. 15 1. 94 1. 24 0. 53 1. 24 1. 92 (n, length, location, Tw. L, Ts. L, Tw, Ts, Tw. R, Ts. R) Mutual inductance has ten dimensions: u n t 1 Ts T w. R Tw Self inductance has nine dimensions: u n Ts. L Tw (n, length, location 1, location 2, Tw. L, Ts. L, Tw, Ts, Tw. R, Ts. R) Length is needed because inductance is not linearly scalable

Definition of Partial Inductance Vi n Vj Partial inductance is the portion of loop

Definition of Partial Inductance Vi n Vj Partial inductance is the portion of loop inductance for a segment when its current returns via the infinity u called partial element equivalent circuit (PEEC) model n If current is uniform (no skin effect), the partial inductance is

Partial Inductance for N Traces Tw T w. L t. L n t 1

Partial Inductance for N Traces Tw T w. L t. L n t 1 Ts t 2 T w. R Tw Ts t 3 Ts. R t. R 6. 17 5. 43 5. 12 4. 89 4. 66 5. 43 6. 79 6. 10 5. 48 5. 04 5. 12 6. 10 6. 79 6. 10 5. 33 4. 89 5. 48 6. 10 6. 79 5. 77 Treat edge traces same as inner traces u n Ts. L Tw lead to 5 x 5 partial inductance table Partial inductance model is more accurate compared to loop inductance model u Without pre-setting current return loop 4. 66 5. 04 5. 33 5. 77 6. 50

Foundation I The self inductance under the PEEC model for a trace depends only

Foundation I The self inductance under the PEEC model for a trace depends only on the trace itself (w/ skin effect for a given frequency). T w. L t. L Tw Ts. L t 1 Ts Tw t 2 T w. R Tw Ts t 3 Ts. R t. R 6. 17 5. 43 5. 12 4. 89 4. 66 5. 43 6. 79 6. 10 5. 48 5. 04 5. 12 6. 10 6. 79 6. 10 5. 33 4. 89 5. 48 6. 10 6. 79 5. 77 4. 66 5. 04 5. 33 5. 77 6. 50

Foundation II The mutual inductance under the PEEC model for two traces depends only

Foundation II The mutual inductance under the PEEC model for two traces depends only on the traces themselves (w/ skin effect for given frequency). Tw T w. L t. L Ts. L t 1 Ts Tw t 2 T w. R Tw Ts t 3 Ts. R t. R 6. 17 5. 43 5. 12 4. 89 4. 66 6. 17 4. 66 5. 43 6. 79 6. 10 5. 48 5. 04 5. 12 6. 10 6. 79 6. 10 5. 33 4. 89 5. 48 6. 10 6. 79 5. 77 4. 66 5. 04 5. 33 5. 77 6. 50 4. 66 6. 50

Foundation III The self loop inductance for a trace on top of a ground

Foundation III The self loop inductance for a trace on top of a ground plane depends only on the trace itself (its length, width, and thickness) T w. L t. L Tw Ts. L t 1 Ts Tw t 2 T w. R Tw Ts t 3 Ts. R t. R 4. 8 2. 5 5. 5 1. 3 2. 9 0. 7 1. 5 0. 14 0. 7 1. 3 2. 9 5. 7 2. 9 1. 3 0. 7 1. 5 2. 9 2. 5 0. 14 0. 7 1. 3 2. 5 4. 8 t. R

Foundation IV The mutual loop inductance for two traces on top of a ground

Foundation IV The mutual loop inductance for two traces on top of a ground plane depends only on the two traces themselves (their lengths, widths, and thickness) T w. L t. L Tw Ts. L t 1 Ts Tw t 2 T w. R Tw Ts t 3 Ts. R t. R 4. 8 2. 5 5. 5 1. 3 2. 9 0. 7 1. 5 0. 14 0. 7 1. 3 2. 9 5. 7 2. 9 1. 3 0. 7 1. 5 2. 9 2. 5 0. 14 0. 7 1. 3 2. 5 4. 8 0. 14 4. 8

Validation and Implication of Foundations I and II can be validated theoretically n Foundations

Validation and Implication of Foundations I and II can be validated theoretically n Foundations III and IV were verified experimentally n n Problem size of inductance extraction can be greatly reduced w/o loss of accuracy u Solve 1 -trace problem for self inductance F Reduce 9 -D table to 2 -D table u Solve 2 -trace problem for mutual inductance F Reduce 10 -D table to 3 -D table

Analytical Solutions to Inductance Not suitable for on-chip interconnects n Without considering skin effect

Analytical Solutions to Inductance Not suitable for on-chip interconnects n Without considering skin effect and internal inductance u Self inductance F k=f(w, t) 0 < k < 0. 0025 u Mutual inductance n Inductance is not sensitive to width, thickness and spacing u No need to consider process variations for inductance

Extension to Random Nets [Xu-HE, GLSVLSI’ 01] n Nets with arbitrary locations, lengths, thickness,

Extension to Random Nets [Xu-HE, GLSVLSI’ 01] n Nets with arbitrary locations, lengths, thickness, and etc. u n available as a web-based tool http: //eda. ece. wisc. edu/Web. Henry Mutual inductance Lab = a b Mutual inductance Lm 1 + Lm 2 Lm 3 Lm 4

Accuracy n n Table versus Fast. Henry 400 random displaced parallel wires cases

Accuracy n n Table versus Fast. Henry 400 random displaced parallel wires cases

Error Distribution l 5% most cases l Bigger error only found in smaller inductance

Error Distribution l 5% most cases l Bigger error only found in smaller inductance values

Full RLC Circuit Model Ls(wire 12) n N 11 N 12 N 13 N

Full RLC Circuit Model Ls(wire 12) n N 11 N 12 N 13 N 14 N 21 N 22 N 23 N 24 $$ Self inductance $$ L 11 N 12 val L 12 N 13 N 14 val L 21 N 22 val L 22 N 23 N 24 val $$ mutual inductance $$ K 1 L 11 L 21 val K 2 L 12 L 22 val K 3 L 11 L 12 val K 4 L 21 L 22 val K 5 L 11 L 22 val K 6 L 21 L 12 val For n wire segments per net u u u RC elements: n self inductance: n mutual inductance: n*(n-1) Lm(wire 21, wire 12) / sqrt(L 21 * L 12)

Normalized RLC Circuit Model Ls(net 1) n N 11 N 12 N 13 N

Normalized RLC Circuit Model Ls(net 1) n N 11 N 12 N 13 N 14 N 21 N 22 N 23 N 24 For n segments per wire u u u RC elements: n Self inductance: n Mutual inductance: n $$ Self inductance $$ L 11 N 12 val L 12 N 13 N 14 val L 21 N 22 val L 22 N 23 N 24 val $$ mutual inductance $$ K 1 L 11 L 21 val K 2 L 12 L 22 val Lm(net 1, net 2) / sqrt(net 1 * net 2)

Full Versus Normalized n n Two waveforms are almost identical Running time: u u

Full Versus Normalized n n Two waveforms are almost identical Running time: u u Full Normalized 99. 0 seconds 9. 1 seconds

Application of RLC model: Shielding Insertion n To decide a uniform shielding structure for

Application of RLC model: Shielding Insertion n To decide a uniform shielding structure for a given wide bus u u Ns: number of signal traces between two shielding traces Ws: width of shielding traces Ws Ws Ws . . . 1 2 3 . . . Ns 1 2 3 Ns

Trade-off between Area and Noise n Total 18 signal traces u 2000 um long,

Trade-off between Area and Noise n Total 18 signal traces u 2000 um long, 0. 8 um wide u separated by 0. 8 um n n Drivers -- 130 x; Receivers -- 40 x Power supply: 1. 3 V Ns Ws Noise(v) Routing Area (um) Wire Area (um) 18 6 6 6 3 -0. 8 1. 6 2. 4 0. 8 0. 71 0. 38 0. 27 0. 22 0. 17 61. 1(0. 0%) 64. 8 66. 4 68. 0 69. 6(13%) 46. 4(0. 0%) 48. 0 49. 6 51. 2 50. 4(8. 8%)

Conclusions n n Inductance is a long-range effect Inductance can be extracted efficiently use

Conclusions n n Inductance is a long-range effect Inductance can be extracted efficiently use PEEC model Normalized RLC circuit model with a much reduced complexity can be used for buses Full RLC circuit model should be used for random nets u n Model reduction or sparse inductance model may reduce circuit complexity RLC circuit model may be simulated for interconnect optimization