Chalmers University of Technology Power Estimation Flex Soc
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Chalmers University of Technology Power Estimation Flex. Soc Seminar Series – 2004 -03 -15 Daniel Eckerbert daniel. eckerbert@ieee. org Flex. So. C Seminar Series – 2004 -03 -15 Page 1
Chalmers University of Technology Outline • Why power estimation? • Power macromodeling • Future directions for power estimation Most pictures (non-Matlab-plots) are courtesy of Intel Corp. Flex. So. C Seminar Series – 2004 -03 -15 Page 2
Chalmers University of Technology Why Power Estimation? (Conference -Presentation Answer) • Heat removal is expensive (fans, heat-sinks) • Energy stored in battery is limited • Power delivery is expensive (area, reliability, verification, packaging) Flex. So. C Seminar Series – 2004 -03 -15 Page 3
Chalmers University of Technology Why Power Estimation? (Flex. So. C Answer) • Compiler optimizations • “Designing” range of chips for certain applications • ? ? ? You tell me! Flex. So. C Seminar Series – 2004 -03 -15 Page 4
Chalmers University of Technology Power Reduction Techniques • Activity reduction • Supply voltage scaling • Leakage reduction (cut-off techniques, stacking etc) But, by how much does the power of a specific design needs to be reduced? And which power mechnism constitutes a problem? Flex. So. C Seminar Series – 2004 -03 -15 Page 5
Chalmers University of Technology Power Dissipation Basics Flex. So. C Seminar Series – 2004 -03 -15 Page 6
Chalmers University of Technology From Where Does the Power Increase Stem? Flex. So. C Seminar Series – 2004 -03 -15 Page 7
Chalmers University of Technology Increased Integration Flex. So. C Seminar Series – 2004 -03 -15 Page 8
Chalmers University of Technology Increased Integration 120 billion transistors per wafer!!! SRAM chips fabricated on a 300 mm wafer Flex. So. C Seminar Series – 2004 -03 -15 Page 9
Chalmers University of Technology Increased Density Flex. So. C Seminar Series – 2004 -03 -15 Page 10
Chalmers University of Technology Power Density Flex. So. C Seminar Series – 2004 -03 -15 Page 11
Chalmers University of Technology Heat Removal (die) Flex. So. C Seminar Series – 2004 -03 -15 Page 12
Chalmers University of Technology Heat Removal (package) Flex. So. C Seminar Series – 2004 -03 -15 Page 13
Chalmers University of Technology Power Macro Modeling Flex. So. C Seminar Series – 2004 -03 -15 Page 14
Chalmers University of Technology Architecture Level Power Macromodeling à la Wattch • P=0. 1*Psw(αmax)+Psw(α, state) Flex. So. C Seminar Series – 2004 -03 -15 Page 15
Chalmers University of Technology What Do We Want from a Power Estimation Methodology? • Accurate • Fast • Provide information for power reduction Flex. So. C Seminar Series – 2004 -03 -15 Page 16
Chalmers University of Technology Levels of Power Estimation Flex. So. C Seminar Series – 2004 -03 -15 Page 17
Chalmers University of Technology Why Use Macro Models? • Circuit simulations excessively time- and memory-consuming • Designers need to run long traces to compare solutions (only possible using macro models) Flex. So. C Seminar Series – 2004 -03 -15 Page 18
Chalmers University of Technology Estimation Tool Run-Times Run-time HSpice* Power. Mill * Macro** 16 b Han. Carlson 12 d 14 h 8 h 49 m (30 x) 6 m 43 s (2700 x / 80 x) 8 b Multiplier 29 d 6 h 17 h 37 m (40 x) 9 m 42 s (4300 x / 100 x) 32 b Multiplier N/A 14 d 10 h 2 h 2 m (N/A / 170 x) * Highly optimized code by team of software designers ** Highly unoptimized C++ code by one overworked circuit designer Flex. So. C Seminar Series – 2004 -03 -15 Page 19
Chalmers University of Technology Precision • Circuit simulations give full or close to full precision (depending on extraction) • Macro modeling can give range of precision levels (with a maximum precision determined by methodology) • Macro model precision is limited by the characterization Flex. So. C Seminar Series – 2004 -03 -15 Page 20
Chalmers University of Technology Power Estimation Flow • Characterization – Requires lower level simulations – Has to support maximum precision – One-time only, can afford to be slow • Estimation – Macro-model only – Can support multiple levels of precision – Frequently run, has to be fast Flex. So. C Seminar Series – 2004 -03 -15 Page 21
Chalmers University of Technology Characterization Flex. So. C Seminar Series – 2004 -03 -15 Page 22
Chalmers University of Technology Estimation Flex. So. C Seminar Series – 2004 -03 -15 Page 23
Chalmers University of Technology Switching Power (Circuit Level) Flex. So. C Seminar Series – 2004 -03 -15 Page 24
Chalmers University of Technology Switching Power (Early Power Macro Models) Flex. So. C Seminar Series – 2004 -03 -15 Page 25
Chalmers University of Technology Switching Power (VLSI Research Group Style) Equation-based 0→ 1 tracking, even for intermediate nodes depending on accuracy • Physical model based on nodal capacitances and voltage swings • Enables semi-automatic characterization Flex. So. C Seminar Series – 2004 -03 -15 Page 26
Chalmers University of Technology Short-Circuit Power (Circuit Level) Flex. So. C Seminar Series – 2004 -03 -15 Page 27
Chalmers University of Technology Short-Circuit Power (Macro Model) Flex. So. C Seminar Series – 2004 -03 -15 Page 28
Chalmers University of Technology Interconnect Modeling Flex. So. C Seminar Series – 2004 -03 -15 Page 29
Chalmers University of Technology CRC Flex. So. C Seminar Series – 2004 -03 -15 Page 30
Chalmers University of Technology RLC Flex. So. C Seminar Series – 2004 -03 -15 Page 31
Chalmers University of Technology Subthreshold-Leakage Power Flex. So. C Seminar Series – 2004 -03 -15 Page 32
Chalmers University of Technology Subthreshold-Leakage Power (Circuit Level) Flex. So. C Seminar Series – 2004 -03 -15 Page 33
Chalmers University of Technology Subthreshold-Leakage Power • Stacking effects • Long settling times • …? Flex. So. C Seminar Series – 2004 -03 -15 Page 34
Chalmers University of Technology Subthreshold-Leakage Power (Macro Model) • Equation-based model considering on- and off-states of the transistors constituting the gate • Enables semi-automatic characterization • Possible extensions for stacking • Possible extensions for multiple clock-cycle settling times Flex. So. C Seminar Series – 2004 -03 -15 Page 35
Chalmers University of Technology Gate-Leakage Power Flex. So. C Seminar Series – 2004 -03 -15 Page 36
Chalmers University of Technology Oxide Thickness 12 Å Flex. So. C Seminar Series – 2004 -03 -15 Page 37
Chalmers University of Technology Oxide Thickness Flex. So. C Seminar Series – 2004 -03 -15 Page 38
Chalmers University of Technology Gate-Leakage Power (Circuit Level) • Enough equations and theory to use up the entire Flex. So. C seminar series Flex. So. C Seminar Series – 2004 -03 -15 Page 39
Chalmers University of Technology Gate-Leakage Power (Macro Model) • Equation-based model considering on- and off-states of the transistors constituting the gate • Enables semi-automatic characterization • Complications include leakage paths originating in one gate and ending up in another gate Flex. So. C Seminar Series – 2004 -03 -15 Page 40
Chalmers University of Technology Separating Power Dissipation Mechanisms Flex. So. C Seminar Series – 2004 -03 -15 Page 41
Chalmers University of Technology Leakage Power Increase Flex. So. C Seminar Series – 2004 -03 -15 Page 42
Chalmers University of Technology Active vs. Leakage Power Flex. So. C Seminar Series – 2004 -03 -15 Page 43
Chalmers University of Technology Separation of Mechanisms (Rise- and Fall-Times) Flex. So. C Seminar Series – 2004 -03 -15 Page 44
Chalmers University of Technology Separation of Mechanisms (Supply-Voltage Scaling) Flex. So. C Seminar Series – 2004 -03 -15 Page 45
Chalmers University of Technology Mismatch for Methodologies without a Leakage Component Flex. So. C Seminar Series – 2004 -03 -15 Page 46
Chalmers University of Technology Mismatch for Methodologies without Leakage or Dynamica Frequency and Supply Scaling Flex. So. C Seminar Series – 2004 -03 -15 Page 47
Chalmers University of Technology Added Complications Flex. So. C Seminar Series – 2004 -03 -15 Page 48
Chalmers University of Technology Complex Gates • Most circuit-level models are only valid for a single transistor or an inverter • Macromodels have to be able to account for large components, 32 b multipliers etc • Complexity increases super-linearly with the number of transistors in the component Flex. So. C Seminar Series – 2004 -03 -15 Page 49
Chalmers University of Technology Non-Conforming Components There are classes of components which do not conform to the presented basic models: • Clock generators • Memories • etc Flex. So. C Seminar Series – 2004 -03 -15 Page 50
Chalmers University of Technology Clock Generation (DLL) Flex. So. C Seminar Series – 2004 -03 -15 Page 51
Chalmers University of Technology Clock Generators (Delay Element) Flex. So. C Seminar Series – 2004 -03 -15 Page 52
Chalmers University of Technology Non-Linear Frequency Dependence for Certain Types of Components Flex. So. C Seminar Series – 2004 -03 -15 Page 53
Chalmers University of Technology Dynamic Precision • Different architectures might impose different precision requirements for different components (static during estimation) • Different operating modes might warrant different need for precision (changes during estimation) Flex. So. C Seminar Series – 2004 -03 -15 Page 54
Chalmers University of Technology Conclusions • Power estimation is not simply about averaging the current through the supplies • Circuit simulation is too slow • A lot of research is needed to enable highlevel power estimation for future designs: some in mechanism modeling but more importantly in the estimation framework Flex. So. C Seminar Series – 2004 -03 -15 Page 55
Chalmers University of Technology Power estimation is not as easy as it looks Flex. So. C Seminar Series – 2004 -03 -15 Page 56
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