Advanced European Infrastructures for Detectors at Accelerators FBK

Advanced European Infrastructures for Detectors at Accelerators FBK Active Edge production and MPP update 25 April 2018 A. Macchiolo, N. Baron Perez, J. Beyer, M. Chatterjee, R. Nisius This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 654168.

WP 7 Edgeless production at FBK § § Continuous trenches - Width < 10 um SOI wafers with 100 and 150 mm thickness Poly-silicon filling Substrates thinning leads to structure separation § SOI wafers from ICEMOS expected in June 28 October 2021 FBK active edge and MPP update, WP 7 session, 3 rd AIDA-2020 Annual Meeting, Bologna, 23 April 2018 2

WP 7 Edgeless production at FBK § HPK style design: 1 BR + 1 GR § No PT J. Schwandt § No trenches 750 mm Design as in the previous production with staggered trenches 750 mm FBK active edge and MPP update, WP 7 session, 3 rd AIDA-2020 Annual Meeting, Bologna, 23 April 2018 3

RD 53 single sensors § Trenches § 1 and 2 floating GR 70 mm § No PT 1 float GR 2 float GR 110 mm FBK active edge and MPP update, WP 7 session, 3 rd AIDA-2020 Annual Meeting, Bologna, 23 April 2018 4

RD 53 single sensors § Trenches 110 mm § No PT § 1 grounded + 1 float rings 1 BR _ 1 GR § Trenches § PT 170 mm § 1 grounded + 3 float rings 4 GR FBK active edge and MPP update, WP 7 session, 3 rd AIDA-2020 Annual Meeting, Bologna, 23 April 2018 5

RD 53 single sensors § Trenches 170 mm § No PT § 1 grounded + 3 float rings 1 BR _ 1 GR § Trenches § 25 x 100 mm 2 110 mm § No PT § 1 grounded + 3 float rings 2 GR FBK active edge and MPP update, WP 7 session, 3 rd AIDA-2020 Annual Meeting, Bologna, 23 April 2018 6

RD 53 A Double and FE-I 4 1 BR _ 1 GR 200 mm § Double chip § No PT § Long pixels (200 mm) in the inter-chip region 110 mm 1 GR 2 GR 4 GR FBK active edge and MPP update, WP 7 session, 3 rd AIDA-2020 Annual Meeting, Bologna, 23 April 2018 7

Timepix and CLICpix 1 BR _ 1 GR 50 mm 5 5 34 CLICPix matrix 6 8 10 CLICpix (25 mm pitch) and Timepix matrices (55 mm pitch) FBK active edge and MPP update, WP 7 session, 3 rd AIDA-2020 Annual Meeting, Bologna, 23 April 2018

PSI 46 dig and ROC 4 sens 5 5 All designs by J. Schwandt FBK active edge and MPP update, WP 7 session, 3 rd AIDA-2020 Annual Meeting, Bologna, 23 April 2018

Pixel sensor productions at at MPG-HLL 28 October 2021 FBK active edge and MPP update, WP 7 session, 3 rd AIDA-2020 Annual Meeting, Bologna, 23 April 2018 10

SOI 4 production at HLL • • 8 wafers produced with 100 and 150 mm thickness Cu UBM and BCB deposited at HLL 4 FE-I 4 quads 2 RD 53 doubles Many single chip RD 53 sensors • Two different p-spray doses • • First structures of four wafers diced and with backside Aluminum delivered by IZM • RD 53 sensors ready for flip-chipping to the chips FBK active edge and MPP update, WP 7 session, 3 rd AIDA-2020 Annual Meeting, Bologna, 23 April 2018

SOI 4: Design of biasing structures • Different designs of biasing rails • … anyhow most of the sensors are implemented without biasing structures Both modules are 150μm and Φ=2× 1015 neqcm-2 SOI 3 FE-I 4 modules W 7 -450 -1 W 7 -450 -2 FBK active edge and MPP update, WP 7 session, 3 rd AIDA-2020 Annual Meeting, Bologna, 23 April 2018

Development of temporary metal technology at HLL • No PT • Ti. W is used as barrier layer during Cu UBM processing Ti. W patterning Comparison of measurements on sensors with PT : using Ti. W and after Ti. W removal

Development of temporary metal technology at HLL • Ti. W is used as seed layer during Cu UBM processing Measurements on sensors without PT : using Ti. W and after Ti. W removal we will be able to compare with measurements after Ti. W removal only on the RD 53 A assemblies • No PT Ti. W patterning Wafer 6 Wafer 7

SOI 5 production at HLL • • 20 wafers produced with 100 and 150 mm thickness Cu UBM and BCB deposited at HLL • • 10 RD 53 doubles 5 small size quads 1 full size quad • • Many single chip RD 53 sensors First structures of four wafers diced and with backside Aluminum delivered by IZM 250 mm • Some of the single chip sensors implement the 250 um edge foreseen for Itk L 1 • Different pixel implant sizes to compare CCE before and after irradiation FBK active edge and MPP update, WP 7 session, 3 rd AIDA-2020 Annual Meeting, Bologna, 23 April 2018

SOI 5 production – geometry variations 40 mm 30 mm • Different implant sizes implemented in single chip sensors • 40, 30, 25, 20 mm cells • Compare results of Vbreak and CCE after irradiation with TCAD simulations of 50 x 50 mm 2 pixel cells 25 mm Simulations: very low variations at moderate fluences J. Beyer https: //indico. cern. ch/event/691359/ FBK active edge and MPP update, WP 7 session, 3 rd AIDA-2020 Annual Meeting, Bologna, 23 April 2018

SOI 5 production – process variations • • Two p-spray doses foreseen in SOI 5 as for SOI 4: standard and lower dose Plan to verify pixel isolation with SOI 4 RD 53 A modules also at very low doses where there can be a different interplay of surface-bulk radiation damage J. Beyer https: //indico. cern. ch/event/691359/ Simulations FBK active edge and MPP update, WP 7 session, 3 rd AIDA-2020 Annual Meeting, Bologna, 23 April 2018