A satellite conference of VLSI Virtual IEEE SNW

Outline l Introduction l Variability of Fin. FET Devices – RDF (Random Dopant Fluctuation)

Introduction-Device Scaling Id 1 l To achieve high performance & low Vth l High

Summaries and Conclusions l l l To achieve high performance and low Vth, the

Suggested Fonts l Use Arial Bold font – Some fonts project poorly – Times

Slides: 5

A satellite conference of VLSI Virtual IEEE SNW 2020 IEEE Silicon Nanoelectronics Workshop Session x. x (Insert your session No. ) Insert your paper title Name of all authors (underline the presenting author) Authors’ affiliations June 13, 2020

Outline l Introduction l Variability of Fin. FET Devices – RDF (Random Dopant Fluctuation) – RTN (Random Telegraph Noise) l The Experimental Measurements l The Physical Models l Summaries and Conclusions 2020 IEEE SNW 2

Introduction-Device Scaling Id 1 l To achieve high performance & low Vth l High mobility and injection velocity: Ø Strained Technology, Ge, IIIV, Graphene. 2 l Better electrostatic control: Ø 3 D configuratinos, ex: multigate, nanowire; Ø ultra-thin channel, ex: unltrathin SOI. 3 Vgs 2020 IEEE SNW 3

Summaries and Conclusions l l l To achieve high performance and low Vth, the CMOS devices continue scaling down and migrate to 3 D architecture. As device scaling continues, dopant numbers in the channel will be decreased to discrete digits, which raises another issue, variability, including, RDF, RTN, etc. This paper examines the sources of variability for Fin. FET CMOS devices. 2020 IEEE SNW 4

Suggested Fonts l Use Arial Bold font – Some fonts project poorly – Times – Bookman – Americana l Use as large a font as possible l Main text lines: 24 point – Secondary lines: 18 point – Smallest text lines: 14 point – Anything below 14 is too small (e. g. 14 point) 2020 IEEE SNW 5