8 Active mixer Large CG 2012320 Shinji Sato

ミキサの回路図 8 • Active mixer – Large CG 2012/3/20 Shinji Sato , Tokyo tech.

Die photo 9 • 65 nm CMOSプロセス • ミキサコア面積: 160× 50[μm 2] 2012/3/20 Shinji Sato , Tokyo tech.

性能比較 Up-conversion mixer Technology Conversion gain [d. B] RF-LO Isolation [d. B] LO leakage [d. Bc] Power consumption [m. W] 12 This work [2] 65 nm 130 nm 90 nm 4. 3 4. 0 4. 5 -37. 3 -37 -57. 5 　-41. 1 -30 N/A 5. 4 24. 0 15. 1 [1] F. Zhang, et al. , Electronics Letters, 2012 [2] T. Tsai, et al. , Electronics Letters, 2012/3/20 [1] Shinji Sato , Tokyo tech.

14 Thank you for your attention! 2012/3/20 Shinji Sato , Tokyo tech.

15 2012/3/20 Shinji Sato , Tokyo tech.

DC mismatch 16 LO leak [d. Bc] 0 -10 -20 -30 -40 -50 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 1. 4 1. 6 1. 8 2. 0 DC mismatch [m. V] • Vth variation causes DC mismatch. • Larger DC mismatch, Larger LO leakage. ØDC mismatch calibration 2012/3/20 Shinji Sato , Tokyo tech.

Cgd mismatch RF-LO isolation [d. B] -30 -40 -50 -60 -70 -80 -90 0. 5 1. 0 1. 5 2. 0 2. 5 3. 0 3. 5 4. 0 4. 5 5. 0 Capacitance mismatch [f. F] • Layout causes capacitance mismatch. • Larger Cgd mismatch, Larger LO leakage and RF-LO isolation. 2012/3/20 Ø Asymmetric layout Shinji Sato , Tokyo tech. 17

Measurement system • BB and LO input : Signal generator • RF output : Spectrum analyzer 2012/3/20 Shinji Sato , Tokyo tech. 18

Conversion gain • BB frequency : 100 MHz • LO frequency : 62. 64 GHz 2012/3/20 Shinji Sato , Tokyo tech. 19

Impedance 20 RF port LO port • Solid line: measurement, Dotted line: simulation • Markers show 60 GHz point. • The difference between simulation and measurement is due to parasitic inductance. 2012/3/20 Shinji Sato , Tokyo tech.

Large-signal characteristics • P 1 d. B : -8. 7 d. Bm • Psat : -5. 2 d. Bm 2012/3/20 Shinji Sato , Tokyo tech. 21