240m 260m MICROCOOLING DEVICES FOR LHCB VELO CERN

240µm 260µm MICRO-COOLING DEVICES FOR LHCB VELO CERN LETI 3 S C. Charrier - C. Castellana - D. Renaud - E. Rouchouze - JF Teissier Meeting 8 Décembre 2016

SOMMAIRE Introduction - Layout Short Loop 1 : Metallisation Short Loop 2 : Dicing Short Loop 3 : Bonding Planning CONFIDENTIEL LETI 3 S CERN D 16 F 0010 23 septembre 2016 |2

LAYOUT f 1 met f 1 trou C Side b 1 flui b 1 can b 2 rep b 2 dec N Side |3

SHORT LOOP METAL (D 16 S 2506) : PHASE 1 A 550 µm Base Wafers 550µm Splits P 01 P 02 P 03 P 04 Ti 50 Ni 350 Au 500 X X Ti 200 Ni 350 Au 500 Stripping 1 Fotopur Stripping 2 EKC X X P 05 P 06 X X F 1 MET 05 B Mask X X P 01 P 02 P 03 P 05 P 06 Delivered 8 th of December 2016 |4

SHORT LOOP DICING (D 16 S 2225) : PHASE 1 B PLAN A : LASER DICING 240 µm 260 µm B 2 REP (and B 2 DEC dxf) Wafers preparation : - Initial bulk wafers 725µm - Thermal oxidation and bonding - Grinding front and back sides - Photo and Silicon dry etch B 2 REP Micro. Jet® - Synova Feasibility : validated on W 46 P 01 P 02 ready to be diced. Plan : W 51 |5

SHORT LOOP DICING : PHASE 1 B PLASMA DICING PLAN B 240 µm 260 µm Wafers preparation (in progress) : - Initial bulk wafers 725µm - Thermal oxidation and bonding - Grinding front and back sides - Photo and Silicon dry etch B 2 REP - Laser mark - Photo Plasma Dicing: mask to discuss Plan : W 05/2017 B 2 REP AND SPECIFIC MASK TO BE DONE Strategy plasma Dicing OPTION 1 Red areas represent non device related surfaces to be covered with mask White lanes represent 100µm exposed Silicon channels (dicing lanes) 100µm channels should not require tape expansion to extract diced pieces |6

OVERALL MASKING & STREET STRATEGY OPTION #2 Strategy plasma Dicing OPTION 2 Red areas represent non device related surfaces to be covered with mask White lanes represent 100µm exposed Silicon channels (dicing lanes) Dummy die dicing channels are created to allow expansion for easy die pick This option present a risk for localized load (higher etch rate) which might result in unbalanced etch rate between outer area and main die / wafer center) |7

DETAILED VIEW - TEST STRUCTURES BLOCKS 100µm channels maintained constant in all areas |8

SHORT LOOP BONDING (D 16 S 2603) : PHASE 1 C 20 + 20 Base Wafers 550µm B 1 FLUID and B 1 CAN masks 20 Wafers Bottom Si bulk 550µm Silicon channels and capillary etching (Fluid) 20 Wafers TOP Si bulk 550µm Wafer Lot in progress Planning : W 04 2017 |9

SHORT LOOP BONDING (D 16 S 2603) : PHASE 1 C PLANNING STEP 17/47 – P 2 DELIVERY W 04 | 10

PLANNING - ESTIMATION Micro-cooling devices for LHCb : Current status T 0 : GDS W 40 (received on October 6 th 2016) : OK Final check : 11/09/2016 Appro MASK : W 47 • Delivered to LETI 11/21/2016 PHASE 1 A : Metal short loop W 49 • Wafers delivered to CERN 12/08/2016 PHASE 1 B: Grinding Dicing • • • B plan : Patterning dicing street (plasma dicing), will involve an additional mask Laser Dicing : Wafers Ready. Delay Time for dicing 1, 5 W goal : cleanliness, chipping, wafer/device integrity, alignment accuracy PHASE 1 C: Bonding validation • • W 51 or W 05 Full flow > bonding plan: W 04/2017 W 02 W 03 | 11

Micro-cooling devices for LHCb Velo upgrade Initial plan juil. - août- sept. - oct. - nov. - déc. - janv. - févr. - mars- avr. - mai- juin- juil. - août- sept. - oct. - nov. - déc. - janv. - févr. 16 16 16 17 17 17 18 18 V 1 masks 1 A PHASE 1 B 1 1 C* valid CERN PF LOT PHASE 2 valid CERN LOT 1 LOT 2 LOT 3 LOT 6 LOT 7 LOT 8 1 C* simplified version LOT 4 PHASE 3 LOT 5 | 12

Micro-cooling devices for LHCb Velo upgrade Revised 12/08/2016 oct. - nov. - déc. - janv. - févr. - mars- avr. - mai- juin- juil. - août- sept. - oct. - nov. - déc. - janv. - févr. - mar. - apr. - may. 16 16 16 17 17 17 18 18 18 V 1 masks 1 A metal 1 B PHASE découpe 1 laser 1 C* valid CERN LOT 1 LOT 4 1 C* simplified version PF LOT PHASE 2 valid CERN LOT 2 PHASE 3 LOT 3 | 13

Leti, technology research institute Commissariat à l’énergie atomique et aux énergies alternatives Minatec Campus | 17 rue des Martyrs | 38054 Grenoble Cedex | France www. leti. fr